Zobrazeno 1 - 10
of 84
pro vyhledávání: '"D.D. Rathman"'
Autor:
H.F. Robey, Robert Berger, F.A. Weber, Michael Rose, Robert K. Reich, R. A. Murphy, S.P. Vernon, D.D. Rathman, Brian Tyrrell, A.M. Soares, T. Perry, David M. Craig, E. J. Kohler
Publikováno v:
IEEE Journal of Solid-State Circuits. 43:1940-1950
A 64 times 64-pixel test circuit was designed and fabricated in 0.18-mum CMOS technology for investigating high-speed imaging with large-format imagers. Several features are integrated into the circuit architecture to achieve fast exposure times with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18b566c60045dfb445e85d1083ccdd01
https://doi.org/10.1109/jssc.2008.2001912
https://doi.org/10.1109/jssc.2008.2001912
Autor:
Michael Lesser, T. A. Lind, Steven E. Kissel, Michael Cooper, J. A. Gregory, Barry E. Burke, R. M. Osgood, A.H. Loomis, D.D. Rathman, George R. Ricker, Marshall W. Bautz
Publikováno v:
IEEE Transactions on Nuclear Science. 51:2322-2327
We describe results from recent efforts to enhance the performance of CCDs to both low- and high-energy soft a rays. For improved low-energy (E 160 /spl mu/m) and thus improved x-ray detection for E>5 keV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::115e102282e58cba4f36ef71142139e8
https://doi.org/10.1109/tns.2004.835901
https://doi.org/10.1109/tns.2004.835901
Autor:
Evelyn M. Bond, Robert Berger, A. Ronzhin, Robert K. Reich, Richard T. Williams, Elena Guardincerri, Christopher Morris, M. E. Azzouz, Alexei V. Klimenko, J.S. Kapustinsky, Kris Kwiatkowski, Ren-Yuan Zhu, Zhehui Wang, K. Warner, R. B. Merl, Cris W. Barnes, John Perry, David B. Holtkamp, David M. Craig, E. J. Ramberg, D.D. Rathman
Gigahertz (GHz) imaging technology will be needed at high-luminosity X-ray and charged particle sources. It is plausible to combine fast scintillators with the latest picosecond detectors and GHz electronics for multi-frame hard Xray imaging and achi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::089341f836f36bdc790fbc2d1abf3530
https://resolver.caltech.edu/CaltechAUTHORS:20180718-091955031
https://resolver.caltech.edu/CaltechAUTHORS:20180718-091955031
Autor:
Andrew Messier, Lin Ping Ang, A.M. Soares, Charles Stevenson, Richard Slattery, Stewart Clark, D.D. Rathman, Robert Berger, Douglas J. Young, Kevin Newcomb, Barmak Mansoorian, D. C. Shaver, J.M. Knecht, Vyshnavi Suntharalingam, K. Warner
Publikováno v:
ISSCC
The dominant trend with conventional image sensors is toward scaled-down pixel sizes to increase spatial resolution and decrease chip size and cost [1]. While highly capable chips, these monolithic image sensors devote substantial perimeter area to s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b3c66b49e03aeaa7e99628b12fcd9ee
https://doi.org/10.1109/isscc.2009.4977296
https://doi.org/10.1109/isscc.2009.4977296
Autor:
D.D. Rathman
Publikováno v:
IEEE Transactions on Electron Devices. 37:2090-2098
The effects of variations in doping profiles along the direction of current flow in Si permeable base transistors have been investigated. Numerical simulations of Poisson's equation and the electron-current-continuity equation have been used to deter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68286245c9d94f4acd06ca9c25ab65c8
https://doi.org/10.1109/16.57174
https://doi.org/10.1109/16.57174
Autor:
D.-R. Yost, Douglas J. Young, D.D. Rathman, Kevin Newcomb, Vyshnavi Suntharalingam, K. Warner, J.M. Knecht
Publikováno v:
2007 IEEE International SOI Conference.
Large arrays of scientific imaging devices are in demand for wide-field-of-view imaging systems. We present a deep-trench process technology that enables the fabrication of SOI-based, 3-D-integrated, 4-side-abuttable image sensor "tiles" that can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc2e8aa1379e1ab58e14f23329732e0b
https://doi.org/10.1109/soi.2007.4357870
https://doi.org/10.1109/soi.2007.4357870
Publikováno v:
SPIE Proceedings.
SOI-based active pixel image sensors have been built in both monolithic and vertically interconnected pixel technologies. The latter easily supports the inclusion of more complex pixel circuitry without compromising pixel fill factor. A wafer-scale b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::063bd7dd43e6473bb156b7c14e36c93f
https://doi.org/10.1117/12.739807
https://doi.org/10.1117/12.739807
Autor:
Douglas J. Young, F.A. Weber, Robert K. Reich, M. D. Ulibarri, T. Perry, Harry Robey, Robert Berger, Brian Tyrrell, A.H. Loomis, Scott Watson, Richard M. Osgood, Michael Rose, R. A. Murphy, D.M. O'Mara, D.D. Rathman
Publikováno v:
SPIE Proceedings.
Massachusetts Institute of Technology, Lincoln Laboratory (MIT LL) has been developing both continuous and burst solid-state focal-plane-array technology for a variety of high-speed imaging applications. For continuous imaging, a 128 × 128-pixel cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::222c90cdec73f8cad8ca2cdd0c174470
https://doi.org/10.1117/12.725189
https://doi.org/10.1117/12.725189
Autor:
Vyshnavi Suntharalingam, K. Warner, Renee D. Lambert, Chenson Chen, Robert Berger, Douglas J. Young, Kevin Newcomb, D.M. O'Mara, Brian Tyrrell, Craig L. Keast, J.M. Knecht, D.D. Rathman, J.A. Burns, A.M. Soares, D.-R. Yost, Bruce Wheeler, D. C. Shaver, Charles Stevenson
Publikováno v:
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..
A 1024/spl times/1024 integrated image sensor with 8 /spl mu/m pixels, is developed with 3D fabrication in 150 mm wafer technology. Each pixel contains a 2 /spl mu/m/spl times/2 /spl mu/m/spl times/7.5 /spl mu/m 3D via to connect a deep depletion, 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49c42ef50a1ee8f1d63ef5ae6154fb18
https://doi.org/10.1109/isscc.2005.1494016
https://doi.org/10.1109/isscc.2005.1494016
Publikováno v:
[Proceedings] IVMC '93 Sixth International Vacuum Microelectronics Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec16e8fd224fe4ef379ac906670541d9
https://doi.org/10.1109/ivmc.1993.700316
https://doi.org/10.1109/ivmc.1993.700316