Zobrazeno 1 - 10
of 15
pro vyhledávání: '"D.D. Heston"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 38:1944-1948
A novel monolithic FET topology has demonstrated improved minimum noise figure when compared with a conventional pi-gate FET. The structure, referred to as the spider FET, has allowed noise figures to be achieved in monolithic LNA applications that a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e54099f4fa0928ee3548c0cbafb148e
https://doi.org/10.1109/22.64578
https://doi.org/10.1109/22.64578
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A broadband MBE GaAs PIN/NIP diode limiter has demonstrated 15 dB of isolation with a +32.5 dBm input signal while maintaining less than 0.25 dB of small-signal insertion loss from 0.05 GHz to 14 GHz. These results were obtained by incorporating vert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc2905e60c196ea3586ab601050edf81
https://doi.org/10.1109/mcs.1987.1114511
https://doi.org/10.1109/mcs.1987.1114511
Publikováno v:
2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).
This paper presents the latest GaAs PIN diode rf reliability data. An acceleration factor predicting lifetime as a function of diode perimeter and rf power level is proposed. Power handling measurements of an improved PIN diode layout that provides s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faf72693e330a91305015541323d59b4
https://doi.org/10.1109/mwsym.2002.1011885
https://doi.org/10.1109/mwsym.2002.1011885
Publikováno v:
1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
The three key parameters of passive limiter circuits: limiting, burnout and insertion loss are explained in great detail in this paper. The limiting and burnout characteristics of various size GaAs PIN diodes have been measured. Results indicate that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f088b7e179802a7d57665ac2b0c58df8
https://doi.org/10.1109/mwsym.1999.779486
https://doi.org/10.1109/mwsym.1999.779486
Autor:
D.D. Heston, R.D. Eppich
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
A monolithic four-stage low-noise amplifier (LNA) has demonstrated over 25 dB gain with gain control exceeding 30 dB and a noise figure of less than 3.5 dB from 14 GHz to 17 GHz. Single-gate field-effect transistors (FETs) provide minimum noise figur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35441c32beb2a5bdcdeaf027d83de1c5
https://doi.org/10.1109/mwsym.1989.38782
https://doi.org/10.1109/mwsym.1989.38782
Autor:
D.D. Heston, R.E. Lehmann
Publikováno v:
IEEE 1988 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers..
A description is given of an X-band monolithic four-stage low-noise amplifier (LNA) using series feedback that has demonstrated a 1.8-dB noise figure with 33.8-dB gain and greater than 40-dB gain control capability. This design features single-gate a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4cf8d8421858e48fca728e6b2e14a5b
https://doi.org/10.1109/mcs.1988.197294
https://doi.org/10.1109/mcs.1988.197294
Publikováno v:
IEEE 1988 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers..
A description is given of monolithic GaAs p-i-n diode limiter circuits that have demonstrated 20 dB of variable attenuation at X-band and Ka-band while maintaining under 1.5:1 input voltage standing-wave ratio (VSWR). Insertion loss is 0.5-dB at 10 G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5269dd6a583b2671a01826131691aa16
https://doi.org/10.1109/mcs.1988.197310
https://doi.org/10.1109/mcs.1988.197310
Autor:
D.D. Heston, B. Kopp
Publikováno v:
1988., IEEE MTT-S International Microwave Symposium Digest.
An X-band power amplifier using harmonic tuning and a GaAs FET is described. The amplifier has demonstrated 36% power-added efficiency with 5 W of output power and a 6.0-dB gain at 10 GHz. The key to this design is determining and matching the optimu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35cb8b4bb343396f41acc2922491f304
https://doi.org/10.1109/mwsym.1988.22163
https://doi.org/10.1109/mwsym.1988.22163
Autor:
D.D. Heston, R.E. Lehmann
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 33:1560-1566
An X-band monolithic three-stage low noise amplifier (LNA) employing series feedback has demonstrated 1.8 dB noise figure with 30.0 dB gain and an input VSWR less than 1.2:1 at 10 GHz. The key to this design is using monolithic technology to obtain a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64d6bbaece209dcd950ea6d067afb7c2
https://doi.org/10.1109/tmtt.1985.1133257
https://doi.org/10.1109/tmtt.1985.1133257
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