Zobrazeno 1 - 10
of 371
pro vyhledávání: '"D.C. Streit"'
Autor:
D.C. Streit, Anders Mellberg, E. L. Kollberg, S. Bui, Jörgen Stenarson, Richard Lai, Herbert Zirath, Niklas Rorsman, E. Choumas, Niklas Wadefalk, Iltcho Angelov, Michael E. Barsky, Piotr Starski, R.W. Grundbacher
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 51:1705-1711
This paper describes cryogenic broad-band amplifiers with very low power consumption and very low noise for the 4-8-GHz frequency range. At room temperature, the two-stage InP-based amplifier has a gain of 27 dB and a noise temperature of 31 K with a
Autor:
Liem T. Tran, T.R. Block, J.H. Elliott, A.K. Oki, J. Cowles, D.C. Streit, M. Nishimoto, Kevin W. Kobayashi, A. Gutierrez-Aitken
Publikováno v:
IEEE Journal of Solid-State Circuits. 34:1188-1195
This paper reports on what is believed to be the highest IP3/P/sub dc/ power linearity figure of merit achieved from a monolithic microwave integrated circuit (MMIC) amplifier at millimeter-wave frequencies. The 44 GHz amplifier is based on an InP he
Autor:
Huei Wang, T.R. Block, A.K. Oki, J. Cowles, M. Nishimoto, Kevin W. Kobayashi, J.H. Elliott, Liem T. Tran, Barry R. Allen, D.C. Streit
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:2541-2552
This paper will discuss the practical design of an InP-based heterojunction bipolar transistor (HBT) Q-band high IP3 monolithic microwave integrated circuit (MMIC) amplifier. The amplifier features a novel "double-balanced" design approach that incor
Publikováno v:
IEEE Journal of Solid-State Circuits. 33:870-876
Here we describe a unique Ka-band self-oscillating HEMT-HBT cascode mixer design which integrates an active tunable resonator circuit. The VCO-mixer MMIC integrates GaAs HEMT's and HBT's using selective molecular beam epitaxy (MBE) technology. The HE
Publikováno v:
Journal of Crystal Growth. :903-909
InAlAs/InGaAs HBTs grown on InP substrates can achieve excellent high-frequency performance but suffer from low breakdown and low current gain due to the small InGaAs bandgap. By replacing the InGaAs collector and/or base with a quaternary InGaAlAs l
Publikováno v:
Journal of Crystal Growth. :930-934
We compare the experimental and theoretical photoluminescence (PL) spectra of power and low-noise pseudomorphic AlGaAs InGaAs high electron mobility transistor (HEMT) profiles. The modeling approach uses a self-consistent solution between Schrodinger
Publikováno v:
IEEE Journal of Quantum Electronics. 33:1507-1516
We present measurements on the optical frequency response of epitaxial lift-off (ELO) 1.0-/spl mu/m InP high-electron mobility transistors (HEMTs) to 140 GHz using electrooptic sampling and heterodyne techniques. Our picosecond sampling measurements
Autor:
M. Patel, Laurence P. Sadwick, D. Brehmer, S.J. Allen, K. McCormick, M. Nikols, R.W. Gedridge, Jeffrey E. Shield, R. J. Hwu, D.C. Streit, P. P. Lee
Publikováno v:
Journal of Crystal Growth. 164:285-290
We report the first known study of the growth of epitaxial dysprosium phosphide (DyP) grown on gallium arsenide (GaAs). DyP is lattice matched to GaAs, with the room-temperature mismatch being less than 0.01%. We have grown DyP on GaAs by gas-source
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 44:739-748
An InAlAs-InGaAs-InP HBT CPW distributed amplifier (DA) with a 2-30 GHz 1-dB bandwidth has been demonstrated which benchmarks the widest bandwidth reported for an HBT DA. The DA combines a 100 GHz fmax and 60 GHz fT HBT technology with a cascode copl
Publikováno v:
IEEE Journal of Solid-State Circuits. 31:714-718
We report on a 1-6 GHz HEMT-HBT three-stage variable gain amplifier (VGA), which is realized using selective molecular beam epitaxy (MBE). The VGA integrates an HEMT low noise amplifier with an HBT analog current-steer variable gain cell and output d