Zobrazeno 1 - 10
of 229
pro vyhledávání: '"D.C. Jacobson"'
This book is an outcome of the NATO institute on surface modification which was held in Trevi, 1981. Surface modification and alloying by ion, electron or laser beams is proving to be one of the most burgeoning areas of materials science. The field c
Autor:
D.C. Jacobson, K. Bourdelle, H.-J. Gossmann, M. Sosnowski, M.A. Albano, V. Babaram, J.M. Poate, A. Agarwal, A. Perel, T. Horsky
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30cb6d46ff9e0446b673f57a95c3c189
https://doi.org/10.1109/iit.2000.924148
https://doi.org/10.1109/iit.2000.924148
Autor:
D.C. Jacobson, M. Bude, R. Liu, M. Frei, C.S. Pai, S.N. Rogers, S.M. Merchant, R.W. Gregor, F. Hui
Publikováno v:
Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
WSix metal resistors have been processed and characterized for CMOS technologies. It demonstrates good precision control and excellent quality factors for resistor applications. It can also be used for electrode of MIM capacitor simultaneously. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e333c17065a795de56fb6c984ca02f87
https://doi.org/10.1109/iitc.2001.930065
https://doi.org/10.1109/iitc.2001.930065
Autor:
S. B. Herner, D.C. Jacobson, Yu. E. Erokhin, A. Agarwal, T. E. Haynes, D.J. Eaglesham, Lourdes Pelaz, H.J. Gossmann
The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer contain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eb9daea1c5acf7e11f7befc46176214
https://doi.org/10.2172/650277
https://doi.org/10.2172/650277
Autor:
D.J. Eaglesham, V.C. Venezia, H.J. Gossmann, T. Friessnegg, D.C. Jacobson, B. Nielsen, A. Agarwal, T.E. Haynes
A new technique for detecting the vacancy clusters produced by high-energy ion implantation into silicon is proposed and tested. This technique takes advantage of the fact that metal impurities, such as Au, are gettered near one-half of the projected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd80dfdec3ff2c962fbb046b0f9a1f10
https://doi.org/10.2172/645530
https://doi.org/10.2172/645530
Publikováno v:
Quantum Optoelectronics.
Since the advent of vertical cavity surface-emitting lasers, a renewed interest has also emerged for the spontaneous emission from Fabry-Pérot microcavities. Changes in spontaneous emission characteristics in a 1D microcavity were predicted long ago
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0acdb95edebe52c1323aec3debc1e9c5
https://doi.org/10.1364/qo.1993.qwa.2
https://doi.org/10.1364/qo.1993.qwa.2
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 39:343-346
We have investigated radiation-enhanced diffusion of impurities implanted in amorphous Si. Results will be reported for Cu, Ag, Au, As, In, Sb, Fe and Pt bombarded with 2.5 MeV Ar in the temperature range 77–770 K. At low temperatures an athermal d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35d763c9830a31a63dc1554549af1d37
https://doi.org/10.1016/0168-583x(89)90799-4
https://doi.org/10.1016/0168-583x(89)90799-4
Publikováno v:
MRS Proceedings. 10
The formation and structures of epitaxial CoSi2, NiSi2, Pd2 Si and PtSi films on silicon are reviewed. Polycrystalline films of reasonable epitaxial quality can be grown with sharp interfaces on Si(111) by conventional deposition and heating techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4653f863a0e572474c8654ce52bc3c70
https://doi.org/10.1557/proc-10-79
https://doi.org/10.1557/proc-10-79