Výsledky vyhledávání

Hydrogen-induced structural changes on NiAl(110)

Autor: H.L. Davis, E. W. Plummer, Aubrey Hanbicki, D.B. Poker, Arthur P. Baddorf

Publikováno v: Surface Science. 365:L639-L646

LEED I - V analysis and surface X-ray scattering measurements have been used to determine the structural changes induced by the adsorption of atomic hydrogen on NiAl(110) at 130 K. The clean surface, ordered with 50at% Ni50at%Al, relaxes away from

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9ccfd5d906e2ff796a1d2dc171d96654
https://doi.org/10.1016/0039-6028(96)00851-5

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Coverage and structure of deuterium on Cu(111)

Autor: E. W. Plummer, D. M. Zehner, Geunseop Lee, D.B. Poker

Publikováno v: Surface Science. :717-720

The absolute coverages of atomic deuterium adsorbed on the Cu(111) surface at a temperature of 100 K have been determined using nuclear reaction analysis (NRA), and correlated with thermal desorption spectra (TDS) and deuterium-induced low energy ele

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::19da57e76b24a3a62f4baae9ef15c4c7
https://doi.org/10.1016/0039-6028(96)00252-x

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The deuterium-induced reconstruction of Cu(100): Correlation of surface structures with absolute coverage

Autor: D.B. Poker, C.F. Walters, D. M. Zehner, E. W. Plummer

Publikováno v: Surface Science. 312:L759-L766

We have determined absolute coverages of deuterium on Cu(100) using the reaction D(3He, p)4He and found a saturation coverage of one deuterium atom per surface copper atom. LEED observations reveal no superlattice structures below $ 0.45 ML and four

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce581f230cf76fbbf2f084f7592f8d13
https://doi.org/10.1016/0039-6028(94)90718-8

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Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors

Autor: S.N.G. Chu, D.B. Poker, C.W. Tu, J. Zhang, E.W. Lin, N.C. Tien, W.H. Ku, H.H. Wieder

Publikováno v: Thin Solid Films. 196:295-303

We have investigated the luminescent and device properties of pseudomorphic AlGaAs/InGaAs modulation-doped field effect transistors (MODFETs) with different InAs molar fractions in the InGaAs channel. Molecular beam epitaxy, which simulataneously dep

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::01a9751e2a85f910f9c7ec60ac4bc3b0
https://doi.org/10.1016/0040-6090(91)90373-6

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Nonlinear quantum dot composite material produced by MeV silver ion implantation into lithium niobate

Autor: Sergey S. Sarkisov, Michael J. Curley, D.K. Hensley, E. K. Williams, D.B. Poker, D. Ila

Publikováno v: Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178).

Summary form only given. Solids containing metal quantum dots are of great interest due to their large third-order optical susceptibility and short (of the order of picosecond) nonlinear optical response time. Ion implantation has been shown to produ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::80c1868f7e6dae19580d11e8da052888
https://doi.org/10.1109/cleo.1998.676065

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