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Akademický článek
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Autor:
B.G. Yacobi, D.B. Holt
Microcharacterization of materials is a rapidly advancing field. Among the many electron and ion probe techniques, the cathodoluminescence mode of an electron probe instrument has reached a certain maturity, which is reflected by an increas ing num
The main objective of this book is to systematically describe the basic principles of the most widely used techniques for the analysis of physical, structural, and compositional properties of solids with a spatial resolution of approxi mately 1 ~m
Akademický článek
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Autor:
D.B. Holt, Barry L. Farmer
Publikováno v:
Polymer. 40:4673-4684
Molecular mechanics and dynamics simulations have been utilized to probe the nature of helix reversal activity in polytetrafluoroethylene (PTFE). The results of the simulations indicated that helix reversals do form and migrate in PTFE crystals. At l
Publikováno v:
Materials Science and Engineering: B. 42:14-23
REBIC is a powerful technique for the study of defects, especially grain boundaries (GBs), in ill developed, high-resistivity (semi-insulating) materials. Ideas for modelling GB REBIC contrast have been proposed but neither quantitatively developed n
Autor:
J.S. Roberts, R. Grey, Paul Griffin, J. Barnes, A. G. Norman, Keith W. J. Barnham, John L. Hutchison, Massimo Mazzer, D.B. Holt, E. Grunbaum, John P. R. David
Publikováno v:
Materials Science and Engineering: B. 42:43-51
The location, density and nature of misfit dislocations (MDs) in lattice-strained multi-quantum well (MQW) structures were investigated by depth-resolved electron-beam-induced current (EBIC) and cathodoluminescence (CL) modes in a scanning electron m
Autor:
Giancarlo Salviati, Laura Lazzarini, Lucia Nasi, M. Mazzer, C. Hardingham, D.B. Holt, C. Zanotti-Fregonara
Publikováno v:
Materials Science and Engineering: B. 42:204-207
Antiphase boundaries (APBs) are particularly crystallographically simple but technologically troublesome boundaries that tend to occur in profusion in GaAs grown epitaxially on (100) oriented substrates of Ge or Si. APBs were found to form only in a
Publikováno v:
Materials Science and Engineering: B. 24:130-134
Electron beam currents above 1 μA induce long straight dislocations lying just below the surface in (001) wafers of GaAs and InP. These dislocations are of interest in themselves and are well situated for cathodoluminescence (CL) dark contrast studi
Autor:
D.B. Holt
Publikováno v:
Solid State Phenomena. :171-182