Zobrazeno 1 - 10
of 22
pro vyhledávání: '"D.A. Spee"'
Publikováno v:
Thin Solid Films. 575:67-71
Hot wire CVD (HWCVD) and initiated CVD (iCVD) are very well suited deposition techniques for the fabrication of transparent thin film gas barriers. Single inorganic or organic layers, however, face challenges, which are hard to overcome: unavoidable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a040f73dad3626008541b8d14d4be0
https://doi.org/10.1016/j.tsf.2014.10.029
https://doi.org/10.1016/j.tsf.2014.10.029
Autor:
D.A. Spee, C.H.M. van der Werf, M.J. van Steenbergen, Ruud E. I. Schropp, Ronald J. Bakker, Jatindra K. Rath
Publikováno v:
Thin Solid Films. 519:4479-4482
A combination of SiNx and polymer layers, in our case poly(glycidyl methacrylate) (PGMA) is very suitable as a permeation barrier layer on sensitive electronic devices. Our experiments thus far concentrate on increasing the stability and deposition r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d71e2bc32bdd81655644b315a7cda811
https://doi.org/10.1016/j.tsf.2011.01.297
https://doi.org/10.1016/j.tsf.2011.01.297
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 6:151-153
We present a silicon nitride/polymer hybrid multilayer moisture barrier for flexible electronics made entirely by hot wire chemical vapor deposition (HWCVD) at substrate temperatures below 100 °C. Using the initiated CVD (iCVD) variant of HWCVD for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6c1b8a27544ba2fa311bcd4fd2a7e44
https://doi.org/10.1002/pssr.201206035
https://doi.org/10.1002/pssr.201206035
Autor:
Ruud E. I. Schropp, C.H.M. van der Werf, Jatindra K. Rath, D.A. Spee, M.J. van Steenbergen, Ronald J. Bakker, P. Weijers
Publikováno v:
Thin Solid Films. 519:4418-4420
In this work, polymerization of meta-diethynyl benzene (MDEB) using iCVD is reported, which opens possibilities for use of polymers as a dielectric insulator in electronic applications that cannot be combined with solvent-based materials. iCVD is a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9ddc0d962bd85169126e8cc658307ae
https://doi.org/10.1016/j.tsf.2011.01.310
https://doi.org/10.1016/j.tsf.2011.01.310
Publikováno v:
Canadian Journal of Physics, 92(7/8), 593-596. National Research Council of Canada
We deposited a silicon nitride (SiNx)–polymer hybrid multilayer moisture barrier in a hot wire chemical vapor deposition (HWCVD) process, entirely below 100 °C. The polymer, poly(glycidyl methacrylate) (PGMA), was deposited by initiated chemical v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b108dc81b5679a774a3ab9f260f7f4da
https://research.tue.nl/nl/publications/09a7c26b-dcf8-464f-9658-de990d2c83cc
https://research.tue.nl/nl/publications/09a7c26b-dcf8-464f-9658-de990d2c83cc
Publikováno v:
Encapsulation Nanotechnologies
In this chapter a thorough description of the initiated chemical vapor deposition (iCVD) process will be given, concentrating on molecular weight and deposition rate of the deposited polymer, which are essential for largescale application in hybrid g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a270f6ece303d75e483e75334ef0c6e2
https://doi.org/10.1002/9781118729175.ch9
https://doi.org/10.1002/9781118729175.ch9
Publikováno v:
Solid-State and Organic Lighting, SOLED 2012; Eindhoven; Netherlands; 11 November 2012 through 14 November 2012
The optical transmission of silicon nitride/polymer multilayer permeation barriers was measured and compared with model calculations. With this model the individual layer thicknesses can be tailored to create specific transmission spectra.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f400294cd03ae5f14cf58268d12776aa
https://doi.org/10.1364/e2.2012.jt3a.4
https://doi.org/10.1364/e2.2012.jt3a.4
Autor:
Merijn R. Schipper, D.A. Spee, Ruud E. I. Schropp, Jatindra K. Rath, Karine H. M. van der Werf
Publikováno v:
MRS Proceedings. 1447
A water vapor barrier layer is presented that is deposited entirely at temperatures below ∼100oC. Our method, using hot wire chemical vapor deposition (HWCVD), is effective in reducing the issue of pinholes in single layers of silicon nitride (SiNx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23dddaa58b7640f9cdc3d0e8f60b1480
https://doi.org/10.1557/opl.2012.1065
https://doi.org/10.1557/opl.2012.1065
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