Zobrazeno 1 - 10
of 22
pro vyhledávání: '"D.A. Shiau"'
Publikováno v:
Journal of Electronic Materials. 33:1406-1410
An investigation with the objective of improving n-type ohmic contacts to GaSb-based devices is described. This study involves a series of n-GaInAsSb and n-GaSb samples with varying doping, grown on semi-insulating (SI) GaAs substrates. These samples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a806a028c43bbc215a982a13d9dd63e
https://doi.org/10.1007/s11664-004-0171-1
https://doi.org/10.1007/s11664-004-0171-1
Publikováno v:
Journal of Crystal Growth. 261:379-384
A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::045e6c96599db32a7976e8cf4e94ea1a
https://doi.org/10.1016/j.jcrysgro.2003.11.031
https://doi.org/10.1016/j.jcrysgro.2003.11.031
Publikováno v:
Journal of Crystal Growth. 261:385-392
The preparation of GaSb substrates for epitaxial growth of GaSb and GaInAsSb is reported. The effects of several wet chemical etchants and ambient atmosphere during substrate heating on surface morphology and interfacial impurities were investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8546f16e8dc07e26ca8120191fa441d9
https://doi.org/10.1016/j.jcrysgro.2003.11.032
https://doi.org/10.1016/j.jcrysgro.2003.11.032
Publikováno v:
Journal of Crystal Growth. 261:372-378
InAsSb/GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by organometallic vapor phase epitaxy for wafer bonding and epitaxial transfer. The InAsSb epilayer, which is used as an etch-stop layer, is the template for subsequent growth of GaInAsSb/AlGa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::184c694f3a194f2c6bf54403241f5de4
https://doi.org/10.1016/j.jcrysgro.2003.11.030
https://doi.org/10.1016/j.jcrysgro.2003.11.030
GaSb-based semiconductors are of interest for mid-infrared optoelectronic and high-speed electronic devices. Accurate determination of electrical properties is essential for optimizing the performance of these devices. However, electrical characteriz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::418281d76cca2632648971dd6a8afebf
https://doi.org/10.2172/822276
https://doi.org/10.2172/822276
A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2093e663aff422d712e5e99cd76157e8
https://doi.org/10.2172/821380
https://doi.org/10.2172/821380
An investigation with the objective of improving n-type ohmic contacts to GaSb-based devices is described. This study involves a series of n-GaInAsSb and n-GaSb samples with varying doping, grown on both n-GaSb and semi-insulating GaAs substrates. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fee9d410193f854b50906c5e7f5061d
https://doi.org/10.2172/822096
https://doi.org/10.2172/822096
Autor:
G. Nichols, C. A. Wang, D.A. Shiau, D. Donetsky, L. R. Danielson, Michael K. Connors, G. Belenky, S. Anikeev
Publikováno v:
MRS Proceedings. 763
The effect of growth interruption on the properties of GaInAsSb/(Al)Ga(As)Sb heterostructures and on the performance of GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) devices grown by organometallic vapor phase epitaxy is reported. In-situ reflectan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9deb7c6a1f464ab1c0acef8ea40f52ae
https://doi.org/10.1557/proc-763-b8.4
https://doi.org/10.1557/proc-763-b8.4
Autor:
G. Nichols, C. A. Wang, D.A. Shiau, D.M. Depoy, P. W. O’Brien, M. N. Palmisiano, A.C. Anderson, Robin K. Huang, Michael K. Connors, P. G. Murphy
Publikováno v:
MRS Proceedings. 763
The fabrication, characterization, and performance of wafer-bonded (WB) GaInAsSb thermophotovoltaic (TPV) devices for monolithically series-interconnected cells are reported. TPV epilayers were bonded to GaAs handle wafers with SiOx/Ti/Au. This diele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6dbbd5419d9f14339847656bdf5fb5a
https://doi.org/10.1557/proc-763-b2.7
https://doi.org/10.1557/proc-763-b2.7
Publikováno v:
MRS Proceedings. 768
Atomic wafer fusion of GaSb to GaAs, and the transfer of epitaxial GaSb/GaInAsSb/GaSb heterostructures to GaAs by fusion and substrate removal are demonstrated for the first time. Wafers and epilayers were fused with or without application of mechani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::276d316160d9b20e53e702217a7b19d1
https://doi.org/10.1557/proc-768-g4.3
https://doi.org/10.1557/proc-768-g4.3