Zobrazeno 1 - 10
of 456
pro vyhledávání: '"D.A. Antoniadis"'
Publikováno v:
IEEE Transactions on Electron Devices. 66:1208-1212
A scaling study of excess OFF-state current in planar InGaAs quantum-well MOSFETs is reported. We find that pure band-to-band tunneling (BTBT) dominates the drain OFF-state current in deviceswith channel length above $\sim 1~\mu \text{m}$ . In this r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b5c18fb65a77755a5d62356740e52a4
https://doi.org/10.1109/ted.2019.2891751
https://doi.org/10.1109/ted.2019.2891751
Publikováno v:
IEEE Transactions on Electron Devices. 63:1020-1026
We demonstrate InGaAs quantum-well (QW) MOSFET arrays with Mo contact lengths between 40 and 800 nm fabricated by a self-aligned process. A gate pitch of 150 nm is realized, which is the smallest at present for any type of InGaAs FET structure. Fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52369d25f5fe9a2231df128c069d9417
https://doi.org/10.1109/ted.2016.2518206
https://doi.org/10.1109/ted.2016.2518206
Autor:
Yuhao Zhang, Lili Yu, Yi-Hsien Lee, Ujwal Radhakrishna, D.A. Antoniadis, Ahmad Zubair, Jing Kong, Tomas Palacios, Daniel Piedra, Xi Ling, Yuxuan Lin, Anantha P. Chandrakasan, Dina El-Damak
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
Two-dimensional electronics based on single-layer (SL) MoS 2 offers significant advantages for realizing large-scale flexible systems owing to the ultrathin nature, good transport properties and stable crystalline structure of MoS 2 . However, the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::578ddb3e16b7f53a81a644e93da33b7d
https://doi.org/10.1109/iedm.2016.7838356
https://doi.org/10.1109/iedm.2016.7838356
Autor:
Roger Loo, Pankaj Sharma, C. C. Wu, C. Schulte-Braucks, Michael Barth, Anurag Vohra, Redwan N. Sajjad, Rahul Pandey, Suman Datta, C-C. Yeh, Benjamin Grisafe, Ram Krishna Ghosh, Wilman Tsai, Dan Buca, N. von den Driesch, B. Rayner, D.A. Antoniadis, S. Mantl
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
We experimentally demonstrate and benchmark the performance of p-channel TFETs (PTFETs) comparing Group III-V (In 0.65 Ga 0.35 As/GaAs 0.4 SW 0.6 ) against Group IV (Ge/Ge 0.93 Sn 0.07 ) semiconductor hetero-junctions. This is enabled via gate stack
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d5e4dfae13b3788db20a6abe79a6195
https://doi.org/10.1109/iedm.2016.7838455
https://doi.org/10.1109/iedm.2016.7838455
Publikováno v:
Applied Physics Letters. 115:063107
As continued silicon scaling is becoming increasingly challenging, emerging nanotechnologies such as carbon nanotubes (CNTs) are being explored. However, experimental measurements of CNT Field-Effect Transistors (CNFETs) often exhibit substantial off
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27b29d7c3fbd128ccd7b94b29481739a
https://doi.org/10.1063/1.5098322
https://doi.org/10.1063/1.5098322
Autor:
Ximeng Guan, Lan Wei, Aaron D. Franklin, Jieying Luo, Eric Pop, Hon-Sum Philip Wong, Chi-Shuen Lee, D.A. Antoniadis
Publikováno v:
IEEE Transactions on Electron Devices. 60:1834-1843
A semianalytical carbon nanotube field-effect transistor (CNFET) model based on the virtual-source model is presented, which includes series resistance, parasitic capacitance, and direct source-to-drain tunneling leakage. The model is calibrated with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46a5240b759b4cde30fc5439fd72d281
https://doi.org/10.1109/ted.2013.2258023
https://doi.org/10.1109/ted.2013.2258023
Autor:
D.A. Antoniadis, Jing Kong, Karl K. Berggren, Xi Ling, M. S. Dresselhaus, Ahmad Zubair, Redwan N. Sajjad, Amirhasan Nourbakhsh, A. Tavakkoli, Tomas Palacios
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
We demonstrate sub-10 nm transistor channel lengths by directed self-assembly patterning of monolayer MoS 2 in a periodic chain of homojunction semiconducting-(2H) and metallic-phase (1T') MoS 2 regions with half-pitch of 7.5 nm. The MoS 2 composite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3de5671de77b793cd7788cab0844b154
https://doi.org/10.1109/vlsit.2016.7573376
https://doi.org/10.1109/vlsit.2016.7573376
Publikováno v:
IEEE Transactions on Electron Devices. 59:1263-1271
A simple analytical FET channel charge partitioning model valid under ballistic and quasi-ballistic transport conditions is developed. With this model, the virtual-source (VS) based charge-based transport compact model is extended to include self-con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17739ee5755815400a6bf05f15eea74d
https://doi.org/10.1109/ted.2012.2186968
https://doi.org/10.1109/ted.2012.2186968
Publikováno v:
IEEE Transactions on Electron Devices. 59:994-1001
The ballistic injection velocity is examined in state-of-the-art Si extremely thin SOI MOSFETs using ballistic quantum simulations and a virtual source (VS) compact model. The results indicate that the device performs at around 50%-60% of its ballist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48baf26d333a298d11aa7bc52fd08fc2
https://doi.org/10.1109/ted.2012.2183599
https://doi.org/10.1109/ted.2012.2183599
Publikováno v:
IEEE Transactions on Electron Devices. 58:1523-1533
This paper presents a compact model for the current-voltage characteristics of graphene field-effect transistors (GFETs), which is based on an extension of the “virtual-source” model previously proposed for Si MOSFETs and is valid for both satura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::403540d5f4b11a45be79eed23fcb7ccc
https://doi.org/10.1109/ted.2011.2118759
https://doi.org/10.1109/ted.2011.2118759