Zobrazeno 1 - 10
of 49
pro vyhledávání: '"D.A. Ahmari"'
Publikováno v:
ECS Transactions. 33:849-857
The semiconductor industry is being pushed to develop smaller and faster devices as well as increase functionality. As such, a key part of the long-term technology roadmap will include integrating disparate semiconductor materials to provide superior
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85475c47daa9b251fca6bc05584c13e9
https://doi.org/10.1149/1.3487615
https://doi.org/10.1149/1.3487615
Publikováno v:
IEEE Transactions on Electron Devices. 46:634-640
This work describes the temperature dependence of the DC and small-signal performance of InGaP/GaAs heterojunction bipolar transistors (HBT's) with different collector thicknesses. Detailed analyses of the small-signal performance and the temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b489be0f427989c9056db991992992ac
https://doi.org/10.1109/16.753694
https://doi.org/10.1109/16.753694
Autor:
Shawn G. Thomas, Papu D. Maniar, Q.J. Hartmann, Xiuling Li, D.A. Ahmari, Eric S. Johnson, B. Roof, Clarence J. Tracy
Publikováno v:
IEEE Electron Device Letters. 26:438-440
In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c02bf81e6db6fff782f8e2a22d9cc602
https://doi.org/10.1109/led.2005.851132
https://doi.org/10.1109/led.2005.851132
Publikováno v:
Solid-State Electronics. 38:2017-2021
InGaP GaAs heterojunction bipolar transistors with various collector structures are compared. The dependence of d.c. device characteristics on the thickness of the n− GaAs spacer in the collector of composite collector devices is presented. Results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d18740f92c2a7b8ecf0cf3be52477d5
https://doi.org/10.1016/0038-1101(95)00025-o
https://doi.org/10.1016/0038-1101(95)00025-o
Autor:
Q.J. Hartmann, G. E. Stillman, Judith E. Baker, M. Hattendorf, D. F. Lemmerhirt, D.A. Ahmari, Qing-Zheng Yang
Publikováno v:
Applied Physics Letters. 72:3479-3481
A high concentration of hydrogen in the alloy ambient slows the formation of PdGe contacts and increases the resistance of the PdGe to GaAs etchants. The effects of alloy ambient on alloy formation, specific contact resistance, and chemical reactivit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22d9defcf2d2fee1fd78f0b2d4ab61ca
https://doi.org/10.1063/1.121672
https://doi.org/10.1063/1.121672
Publikováno v:
IEEE Electron Device Letters. 18:559-561
To improve electrical isolation and simplify the heterojunction bipolar transistor (HBT) fabrication process, a semi-insulating InGaP buffer layer has been employed in an InGaP/GaAs HBT. Data is presented that demonstrates this buffer layer serves as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d2bf96f6a105b43fb44a6d8e7802cda
https://doi.org/10.1109/55.641445
https://doi.org/10.1109/55.641445
Autor:
T. Horton, Judith E. Baker, Q.J. Hartmann, M. T. Fresina, Nathan F. Gardner, D.A. Ahmari, A. P. Curtis, G. E. Stillman
Publikováno v:
Applied Physics Letters. 70:1822-1824
High-resistivity unintentionally-doped In0.49Ga0.51P lattice matched to GaAs has been grown via low-pressure metalorganic chemical vapor deposition at a reduced growth temperature. These layers have excellent surface quality and are single crystal. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5876d2a067c1b9bf3a7da22422396bb8
https://doi.org/10.1063/1.118702
https://doi.org/10.1063/1.118702
Autor:
J. I. Malin, Milton Feng, G. E. Stillman, D. K. Sengupta, H. C. Liu, S. L. Jackson, Lianhe Li, H. C. Kuo, S. Thomas, D.A. Ahmari, Yun-Chorng Chang
Publikováno v:
Applied Physics Letters. 69:3209-3211
Lattice-matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p-type InGaAs QWIP which, when complimented by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b17db785499c0a36f8c9e68013cceb99
https://doi.org/10.1063/1.117963
https://doi.org/10.1063/1.117963
Autor:
C. A. Martino, Milton Feng, D.A. Ahmari, M.T. Fresina, Douglas W. Barlage, S. Thomas, G. E. Stillman
Publikováno v:
Journal of Electronic Materials. 25:1637-1639
We have demonstrated a high-speed InP/lnGaAs heterojunction bipolar transistor with nonalloyed TiPtAu contacts on n+-InP emitter and collector contacting layers. The use of SiBr4 as a silicon doping source enabled the formation of low resistance (pc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7e0404bef432bfe58ec512f174ca40f
https://doi.org/10.1007/bf02655589
https://doi.org/10.1007/bf02655589
Autor:
Douglas W. Barlage, Q.J. Hartmann, Milton Feng, P.J. Mares, M.T. Fresina, D.A. Ahmari, G. E. Stillman
Publikováno v:
IEEE Electron Device Letters. 17:226-228
A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded In/sub x/Ga/sub 1-x/As base has been demonstrated with f/sub T/=83 GHz and f/sub max/=197 GHz. To our knowledge, these results are the highest reported for both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f59e21f69d0307911f4dc2e16f3ab39a
https://doi.org/10.1109/55.491837
https://doi.org/10.1109/55.491837