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pro vyhledávání: '"D.-W. Tu"'
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Autor:
Cheh-Ming Liu, S.W. Duncan, D.-W. Tu, J.J. Rosenberg, David B. Rutledge, M.P. De Lisio, A. Moussessian
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 44:2136-2144
A 100-element hybrid grid amplifier has been fabricated, The active devices in the grid are custom-made pseudomorphic high electron mobility transistor (pHEMT) differential-pair chips. We present a model for gain analysis and compare measurements wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::054c6485091e72428055a48b8605a933
https://doi.org/10.1109/22.556440
https://doi.org/10.1109/22.556440
Autor:
B. Golja, N.E. Byer, S.W. Duncan, Sander Weinreb, S.P. Svensson, Abdollah Eskandarian, B.C. Kane, D.-W. Tu
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 42:2590-2597
Five versions of monolithic W-band 0.1 /spl mu/m AlGaAs-InGaAs-GaAs pseudomorphic HEMT, four-stage, low noise amplifiers based on two different designs were developed. These millimeter wave monolithic integrated circuits have produced a minimum noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf2255b1e94355847ff85d3b93d61168
https://doi.org/10.1109/22.339801
https://doi.org/10.1109/22.339801
Publikováno v:
IEEE Microwave and Guided Wave Letters. 9:458-460
Double-recess power metamorphic high electron mobility transistors (MHEMTs) on GaAs substrates were successfully demonstrated. The In/sub 0.53/Al/sub 0.47/As/In/sub 0.65/Al/sub 0.35/As structures exhibited extrinsic transconductance of 1050 mS/mm and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9132345d2436b326abba51ffeca2f0e9
https://doi.org/10.1109/75.808035
https://doi.org/10.1109/75.808035
Autor:
Calvin Domier, D. W. Tu, Z.-T. Chen, W. M. Zhang, F. Jiang, Neville C. Luhmann, X. H. Qin, W. Berk, S. Duncan
Publikováno v:
IEEE Microwave and Guided Wave Letters. 8:112-114
A quasi-optical planar grid switch array comprised of hundreds of Schottky varactor diodes embedded within an overmoded waveguide is capable of generating switching times of 100-500 ps in the millimeter-wave region with Watt-level power-handling capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbc5118baa4ca3d402b4f11c94f1d22d
https://doi.org/10.1109/75.661132
https://doi.org/10.1109/75.661132
Publikováno v:
IEEE Electron Device Letters. 17:328-330
This letter describes the material characterization and device test of InAlAs/InGaAs high electron mobility transistors (HEMTs) grown on GaAs substrates with indium compositions and performance comparable to InP-based devices. This technology demonst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aff0f5e23f65029ec16897b3fbcdad5
https://doi.org/10.1109/55.506357
https://doi.org/10.1109/55.506357
Publikováno v:
1992 IEEE Microwave Symposium Digest MTT-S.
The authors present early design, fabrication and performance information on a 210-GHz subharmonically pumped GaAs monolithic microwave integrated circuit (MMIC) mixer using two individually biased antiparallel diodes in a simple crossed waveguide mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2233c616eb001904c87df8993e32de10
https://doi.org/10.1109/mwsym.1992.188054
https://doi.org/10.1109/mwsym.1992.188054
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
We present a 36-element monolithic millimeter-wave grid amplifier. The grid operates in the U-band, using pseudomorphic High Electron Mobility Transistors (pHEMTs) as the active devices. The grid has a peak gain of 6.5 dB at 44 GHz. The grid can be t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df3fad1404cbaf9897f07696d58cf14b
https://doi.org/10.1109/mwsym.1996.511228
https://doi.org/10.1109/mwsym.1996.511228
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
A 77 GHz monolithic voltage-controlled oscillator is described. The active element is a "low-noise" pseudomorphic HEMT. Tuning is achieved with a second HEMT in which the source and drain are connected and the gate-channel capacitance forms a varacto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ab1e22d177f12576b71081cdd96a317
https://doi.org/10.1109/mwsym.1996.508525
https://doi.org/10.1109/mwsym.1996.508525
Autor:
S.W. Duncan, S.E. Brown, E. Fischer, Abdollah Eskandarian, N.E. Byer, W.P. Berk, B. Golja, S.P. Svensson, B.C. Kane, D.-W. Tu, D.M. Gill, S. Weinreb
Publikováno v:
Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.
Two monolithic W-band four-stage LNA's based on 0.1 /spl mu/m AlGaAs-InGaAs-GaAs p-HEMT technology were developed. One with integral waveguide coupling probes has achieved a noise figure of 4.0 dB with a gain of 30.8 dB at 94 GHz; the other has a gai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156dd1b4c90173661e9a6aca1356a9b2
https://doi.org/10.1109/mcs.1994.332149
https://doi.org/10.1109/mcs.1994.332149