Zobrazeno 1 - 10
of 28
pro vyhledávání: '"D.-G. Crété"'
Publikováno v:
Protection of Metals and Physical Chemistry of Surfaces. 48:59-67
The aim of this study was to quantitatively estimate the kinetics of the formation and growth of oxide SrTiO3 (STO) films using the method of the in situ reflection high-energy electron diffraction (RHEED) and compare the obtained results with the kn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd8805bf8f8f42a973699c414594f4e0
https://doi.org/10.1134/s207020511105008x
https://doi.org/10.1134/s207020511105008x
Publikováno v:
IEEE Transactions on Applied Superconductivity. 21:697-700
This paper presents the design, simulation of performance, and layout of a one-bit comparator for a pipeline analog-to-digital converter. It has been designed for the low critical temperature technology of the European Fluxonics Foundry and the part
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a31c14cb0a59235e25efb1381f9b41f3
https://doi.org/10.1109/tasc.2011.2104933
https://doi.org/10.1109/tasc.2011.2104933
Autor:
Stéphane Fusil, Manuel Bibes, Isabelle Devos, D. Imhoff, Jean-Luc Maurice, Agnès Barthélémy, Karim Bouzehouane, B. Domengès, Cyrile Deranlot, Eric Jacquet, Gervasi Herranz, D.-G. Crété, Dominique Ballutaud, G. Gachet, C. Carrétéro, Marie-José Casanove
Publikováno v:
Materials Science and Engineering: B. 144:1-6
Some interfaces in semiconductors or insulators structurally cause a valence mismatch, which leads to a two-dimensional space charge that must be balanced by localised or mobile charge carriers. Screening by mobile electrons presents a lot of theoret
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d252c44886a30e5e7dfda4391b08b9d
https://doi.org/10.1016/j.mseb.2007.07.095
https://doi.org/10.1016/j.mseb.2007.07.095
Publikováno v:
Thin Solid Films. 515:6422-6432
Langmuir ion probe and in situ RHEED were applied to study the effects of low oxygen pressure on SrTiO 3 (STO) film growth by Pulsed Laser Deposition (PLD). Contributions of different oxygen fluxes were analysed and parameters of STO epitaxial film g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bb5206534201f76096fc991bd47f5f0
https://doi.org/10.1016/j.tsf.2006.11.099
https://doi.org/10.1016/j.tsf.2006.11.099
Autor:
Karim Bouzehouane, S Berger, D.-G. Crété, K. van der Beek, J.-P. Contour, Olivier Durand, J Briatico, Jean-Luc Maurice
Publikováno v:
Physica C: Superconductivity. :634-637
We have made high quality c -axis NdBa 2 Cu 3 O 7 thin films on [0 0 1] SrTiO 3 by pulsed laser deposition, with much better crystalline properties than YBa 2 Cu 3 O 7 : smooth surface and low outgrowth density. TEM and 4-circle X-ray diffraction exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0629ebdf65967c33738ac63a51a47570
https://doi.org/10.1016/s0921-4534(02)00818-3
https://doi.org/10.1016/s0921-4534(02)00818-3
Autor:
D.-G. Crété, A. N. Khodan, Eric Jacquet, P. Woodall, Bruno Marcilhac, J.C. Mage, J.-P. Contour, Karim Bouzehouane
Publikováno v:
Le Journal de Physique IV. 11:Pr11-41
The performance of tunable microwave devices based on heteroepitaxial YBa 2 Cu 3 O x /SrTiO 3 films on (001) LaAlO 3 substrate has been evaluated. It has been ascertained that 'out-of-plane' SrTiO 3 lattice parameter is the relevant factor in determi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1a1565fc93386ca88670984859ddbfa
https://doi.org/10.1051/jp4:20011106
https://doi.org/10.1051/jp4:20011106
Autor:
A. N. Khodan, Karim Bouzehouane, P. Woodall, D.-G. Crété, Eric Jacquet, J.C. Mage, B. Marcilhac, J.-P. Contour
Publikováno v:
Applied Physics Letters. 80:109-111
The performance of tunable microwave devices based on heteroepitaxial YBa2Cu3Ox/SrTiO3 films on (001) LaAlO3 substrates has been evaluated. It was ascertained that “out-of-plane” SrTiO3 lattice parameter is the relevant factor in determining both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7980da6f1809e4a856e7f5a7d97525a5
https://doi.org/10.1063/1.1428411
https://doi.org/10.1063/1.1428411
Autor:
Cyrile Deranlot, J. Allibe, Daniel Sando, Alain Barthélémy, Eric Jacquet, Jérôme Bourderionnet, Karim Bouzehouane, C. Carrétéro, J.C. Mage, D.-G. Crété, Stéphane Fusil, Manuel Bibes
Publikováno v:
Frontiers in Optics 2011/Laser Science XXVII.
The ferroelectric bismuth ferrite (BiFeO3) exhibits a strong spontaneous polarization and potentially large electro-optic coefficients. We present our efforts in the design and fabrication of thin film electro-optic modulators based on thin film hete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e997aa480721650b6792ebb44b28578
https://doi.org/10.1364/fio.2011.fthw2
https://doi.org/10.1364/fio.2011.fthw2
Publikováno v:
Materials Science and Engineering: B. 21:317-320
Molecular beam epitaxy was used to grow heteroepitaxial PbSe on Si(111) substrates with the aid of BaF 2 and CaF 2 buffer layers. The growth process was optimized with respect to transmission electron microscopy, atomic force microscopy and X-ray dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea93b354ff9a698a1e4ce768a93e3c0e
https://doi.org/10.1016/0921-5107(93)90376-x
https://doi.org/10.1016/0921-5107(93)90376-x
Autor:
Michael Siegel, Thomas Schurig, Evgeni Il'ichev, J.-C. Villegier, E.J. Tarte, H.J.M. ter Brake, D.-G. Crété, Ronny Stolz, Johannes Kohlmann, H.-G. Meyer, Mark G. Blamire, J. Niemeyer, F.-Im. Buchholz, Horst Rogalla, Alexander B. Zorin, L. Fritzsch, Anna Y. Herr, Roberto Cristiano, Thomas Ortlepp, Alexandre M. Zagoskin, Solveig Anders, J. Kunert, Hannes Toepfer, Pascal Febvre
Publikováno v:
Physica C, 470, 1-48. Elsevier
Physica C: Superconductivity
Physica. C, Superconductivity
470 (2010): 2079–2126. doi:10.1016/j.physc.2010.07.005
info:cnr-pdr/source/autori:Anders S., Blamire M., Buchholz F.-Im., Crété D.-G., Cristiano R., Febvre P., Fritzsch L., Herr A., Ili'chev E., Kohlmann J., Kunert J., Meyer H.-G., Niemeyer J., Ortlepp T., Rogalla H., Schurig T., Siegel M., Stolz R., Tarte E., Ter Brake M., Töpfer H.,/titolo:European roadmap on superconductive electronics-status and perspectives/doi:10.1016%2Fj.physc.2010.07.005/rivista:Physica. C, Superconductivity (Print)/anno:2010/pagina_da:2079/pagina_a:2126/intervallo_pagine:2079–2126/volume:470
Physica C: Superconductivity
Physica. C, Superconductivity
470 (2010): 2079–2126. doi:10.1016/j.physc.2010.07.005
info:cnr-pdr/source/autori:Anders S., Blamire M., Buchholz F.-Im., Crété D.-G., Cristiano R., Febvre P., Fritzsch L., Herr A., Ili'chev E., Kohlmann J., Kunert J., Meyer H.-G., Niemeyer J., Ortlepp T., Rogalla H., Schurig T., Siegel M., Stolz R., Tarte E., Ter Brake M., Töpfer H.,/titolo:European roadmap on superconductive electronics-status and perspectives/doi:10.1016%2Fj.physc.2010.07.005/rivista:Physica. C, Superconductivity (Print)/anno:2010/pagina_da:2079/pagina_a:2126/intervallo_pagine:2079–2126/volume:470
For four decades semiconductor electronics has followed Moore's law: with each generation of integration the circuit features became smaller, more complex and faster. This development is now reaching a wall so that smaller is no longer any faster. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7df030536ab16aa19eedbfd8b18aadb7
https://research.utwente.nl/en/publications/acbef263-19a8-406f-8dd0-943c49ecb9aa
https://research.utwente.nl/en/publications/acbef263-19a8-406f-8dd0-943c49ecb9aa
