Zobrazeno 1 - 10
of 39
pro vyhledávání: '"D. Zahorski"'
A spectroscopic ellipsometry investigation of RF‐sputtered crystalline vanadium pentoxide thin films
Autor:
X. Gagnard, Jean-Pierre Pereira-Ramos, Sami Oukassi, R. Salot, J. P. Piel, J. L. Stehlé, D. Zahorski
Publikováno v:
physica status solidi c. 5:1109-1112
Vanadium pentoxide (V2O5) raised much interest, in several fields, especially relating to thin film lithium microbatteries. Yet, literature mentioned different results about a variation of electrochemical performance of these films with thickness. Th
Autor:
D. Zahorski, Dominique Débarre, T. Sarnet, J. Venturini, J. Boulmer, C. Laviron, M.N. Semeria, M. Hernandez, G. Kerrien
Publikováno v:
Journal de Physique IV (Proceedings). 108:71-74
Cette etude concerne les techniques de recuit laser (LTP) et de dopage laser direct (GILD) de jonctions ultra-minces, necessaires a la fabrication des composants microelectroniques du futur (generations CMOS sub 0,1 μm). Des jonctions de 20 a 80 nm
Publikováno v:
Applied Surface Science. :189-193
The rapid control of laser crystallisation during in-line large area flat panel display fabrication using polysilicon (poly-Si) thin-film transistors (TFT’s) is of growing importance. In this work, the microstructural analysis of the laser irradiat
Autor:
Dominique Débarre, D. Zahorski, G. Kerrien, J.-L. Santailler, C. Laviron, D. Camel, J. Boulmer, M.N. Semeria, J. Venturini, M. Hernandez, T. Sarnet
Publikováno v:
Applied Surface Science. :345-351
In the last few years, laser thermal processing (LTP) has become a potential solution for sub-0.1 μm technology requirements, as focused by the international technology roadmap for semiconductors (ITRS). This paper presents a numerical simulation of
Autor:
S Prochasson, D. Zahorski, Pierre Boher, F. Raoult, K. Mourgues, Olivier Bonnaud, Y. Helen, Régis Rogel, Tayeb Mohammed-Brahim
Publikováno v:
Thin Solid Films. 337:133-136
One of the most interesting ways to develop good quality polysilicon films in order to fabricate thin film transistors (TFTs) on low cost glass substrates is by laser crystallization of amorphous silicon (a-Si). Crystallization technique using pulsed
Publikováno v:
Annales de Physique. 22:C1-31
Publikováno v:
Thin Solid Films. 234:412-415
In this paper we report on the development and performance of the first fully automatic spectroscopic ellipsometer in a production line of integrated circuits. We describe the problem to be solved by the new equipment (multilayer monitor), combining
Autor:
Dominique Débarre, M. Hernandez, J. Boulmer, T. Sarnet, D. Zahorski, C. Laviron, G. Kerrien, D. Camel, J. Venturini, J.-L. Santailler, M.N. Semeria
Publikováno v:
MRS Proceedings. 765
According to the International Technology Roadmap for Semiconductors (ITRS), the doping technology requirements for the MOSFET source and drain regions of the future CMOS generations lead to a major challenge. A critical point of this evolution is th
Publikováno v:
9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001.
Summary form only given. The International Technology Roadmap of Semiconductors (ITRS) plans to introduce in production 50 nm node CMOS devices by 2011. These devices will require source and drain extensions depths in the 10 nm range. In order to con
Autor:
J. Boulmer, D. Zahorski, Dominique Débarre, M.N. Semeria, M. Hernandez, C. Laviron, M. Stehle, G. Kerrien
Publikováno v:
Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C).
Formation of ultra shallow junction will need laser annealing process in an imminent future. The VEL 15 laser source from SOPRA allows to anneal in a single shot a complete die with /spl plusmn/3.5% uniformity, and with enough energy to melt silicon