Zobrazeno 1 - 10
of 58
pro vyhledávání: '"D. Z. Chi"'
Publikováno v:
APL Materials, Vol 1, Iss 3, Pp 032121-032121 (2013)
We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar
Externí odkaz:
https://doaj.org/article/db29b40da33d40d8ae88b6ddf4cce86f
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88469288dd32ad59c94eb1b6dda34ba4
https://doi.org/10.1201/9781351074636-106
https://doi.org/10.1201/9781351074636-106
Publikováno v:
Science and Technology of Welding and Joining. 12:87-93
In order to accurately measure crack in an aluminium weld component, ultrasonic time of flight diffraction (TOFD) B-scan (cross-section scan) image with poor resolution is processed. A preprocessing method combines clutter repression and amplitude pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e2091a5b817d98d8018282ef2511212
https://doi.org/10.1179/174329307x159847
https://doi.org/10.1179/174329307x159847
Autor:
Z P, Ling, R, Yang, J W, Chai, S J, Wang, W S, Leong, Y, Tong, D, Lei, Q, Zhou, X, Gong, D Z, Chi, K-W, Ang
Publikováno v:
Optics express. 23(10)
We report on the demonstration of photodetectors based on large scale two-dimensional molybdenum disulfide (MoS2) transition metal dichalcogenides. Excellent film uniformity and precise control of the MoS2 thickness down to a monolayer (~0.75nm) were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::168b983289ba3e7463a74871df82ae72
https://pubmed.ncbi.nlm.nih.gov/26074606
https://pubmed.ncbi.nlm.nih.gov/26074606
Autor:
D.-L. Kwong, N. Wu, M. F. Li, J. S. Pan, J. Z. Zheng, Chunxiang Zhu, H. Y. Yu, W. D. Wang, Sasangan Ramanathan, B. J. Cho, C. H. Tung, C. H. Ang, D. Z. Chi, J. W. Chai
Publikováno v:
Applied Physics Letters. 81:3618-3620
The kinetics of the interfacial layer (IL) growth between Hf aluminates and the Si substrate during high-temperature rapid thermal annealing (RTA) in either N2 (∼10 Torr) or high vacuum (∼2×10−5 Torr) is studied by high-resolution x-ray photoe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a832ac7aac294cbbfb776dff21c99e48
https://doi.org/10.1063/1.1519733
https://doi.org/10.1063/1.1519733
Autor:
Yang Li, Terence Kin Shun Wong, Goutam Kumar Dalapati, C. K. Chia, D. Z. Chi Wang, B. Z. H. Gao, M. K. Kumar
Publikováno v:
The 4th IEEE International NanoElectronics Conference.
Zn: GaAs and undoped GaAs were grown by metalorganic chemical vapor deposition (MOCVD) at reduced temperature on Ge (001) substrates. High-k ZrO 2 layers were deposited by radio frequency (RF) sputtering. Ge in-diffusion was observed. The electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1b97b798c6bfb8f09cff728acd0819d
https://doi.org/10.1109/inec.2011.5991654
https://doi.org/10.1109/inec.2011.5991654
Publikováno v:
Journal of nanoscience and nanotechnology. 11(3)
Fe3Si thin films were sputter-deposited on Si(001) substrates. Structural investigations show that Fe3Si was deposited poly-crystalline with a Si-containing layer at the Fe3Si/Si interface. The formation of the layer was attributed to the influence o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::47c2c1bfa0f2bed2b10a3ad8f3e9e6dc
https://pubmed.ncbi.nlm.nih.gov/21449455
https://pubmed.ncbi.nlm.nih.gov/21449455
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21000080937010d11b3bf4359bfae716
https://doi.org/10.7567/ssdm.2008.a-6-4
https://doi.org/10.7567/ssdm.2008.a-6-4
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3493009ae527f3621c12c14c7411e973
https://doi.org/10.7567/ssdm.2008.b-1-2
https://doi.org/10.7567/ssdm.2008.b-1-2
Publikováno v:
Applied Physics Letters. 98:013507
Heterojunction solar cells with Al-alloyed polycrystalline p-type β-phase iron disilicide [p-β-FeSi2(Al)] on n-Si(100) were investigated. The p-β-FeSi2(Al) was grown by sputter deposition and rapid-thermal annealing. Photocurrent of ∼1.8 mA/cm2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01b1c5894c2d79f3ff16ab265ebb203f
https://doi.org/10.1063/1.3536523
https://doi.org/10.1063/1.3536523