Zobrazeno 1 - 1
of 1
pro vyhledávání: '"D. Yuan-Shun Chao"'
Autor:
Chenhsin Lien, W. Po-Nien Chen, Yi-Ming Sheu, Pin Su, D. Yuan-Shun Chao, J. S. Wang, Chun-Hsing Shih, Ken-Ichi Goto
Publikováno v:
IEEE Electron Device Letters. 28:1040-1043
A new mobility model, together with its extraction method for manufacturing strained-Si MOSFETs, is presented. An accurate mobility extraction is obtained from the linear drain current by excluding the parasitic source/drain resistance and the parasi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a6ad11dc2b5a46fa326e0a994cea102
https://doi.org/10.1109/led.2007.908477
https://doi.org/10.1109/led.2007.908477
