Zobrazeno 1 - 10
of 45
pro vyhledávání: '"D. Yu. Smirnov"'
Publikováno v:
Омский научный вестник: Серия "Общество. История. Современность", Vol 4, Iss 2, Pp 108-116 (2019)
The state supports the real estate market not only during the economic crisis, but in all phases of the economic cycle. As a result the state simultaneously solves tasks of providing housing to the population, the expansion of the banking sector th
Externí odkaz:
https://doaj.org/article/d6c178dc6fb9436b925185f4d0381787
Publikováno v:
Bulletin of Science and Technical Development. :3-12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40832bffb1789857eedcb9478969bdd7
https://doi.org/10.18411/vntr2019-142-1
https://doi.org/10.18411/vntr2019-142-1
Publikováno v:
Омский научный вестник: Серия "Общество. История. Современность", Vol 4, Iss 2, Pp 108-116 (2019)
The state supports the real estate market not only during the economic crisis, but in all phases of the economic cycle. As a result the state simultaneously solves tasks of providing housing to the population, the expansion of the banking sector thro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::747eb649cf1a7e8f900832cb33a40653
https://doi.org/10.25206/2542-0488-2019-4-2-108-116
https://doi.org/10.25206/2542-0488-2019-4-2-108-116
Publikováno v:
Морской биологический журнал, Vol 4, Iss 1 (2019)
Nauplii of brine shrimps Artemia spp. (Branchiopod: Anostraca) are one of the main species of live food used in marine fish larviculture. Specialized formulated enrichments or microalgae containing essential components for fish larvae are routinely u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::00551f511a0ab6f1920273880ad10664
https://mbj.marine-research.org/article/view/158
https://mbj.marine-research.org/article/view/158
Publikováno v:
Russian Microelectronics. 40:533-537
The sensitivity of various parameters of integrated circuits developed by various technologies to X-ray radiation and the possibility to predict the level of low-frequency noise are considered.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c77bf555f619f935abf10f81f699d434
https://doi.org/10.1134/s1063739711070080
https://doi.org/10.1134/s1063739711070080
Publikováno v:
Russian Microelectronics. 40:47-51
Methods of the separation of semiconductor devices (SDs) by reliability with the use of parameters of low-frequency (LF) noise under the effect of X-ray irradiation are considered. Different methods of the separation of SDs by reliability depending o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e3ec66c1eed47c75f32d60017a710e4
https://doi.org/10.1134/s1063739710061010
https://doi.org/10.1134/s1063739710061010
Publikováno v:
Russian Microelectronics. 39:19-25
Procedures for screening batches of CMOS and bipolar integrated circuits (ICs) are considered using low-frequency noises and electrostatic discharge (ESD) effects.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::310f87b17ad1a50431b15675d11f13a7
https://doi.org/10.1134/s1063739710010038
https://doi.org/10.1134/s1063739710010038
Publikováno v:
Semiconductors. 43:1737-1741
Various methods for separating an integrated circuit (IC) batch were considered using noise parameters for the purpose of determining their reliability. The existing methods for screening semiconductor products using low-frequency (LF) noise were tes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f064f5c10d409bc40831d7af3333a96
https://doi.org/10.1134/s1063782609130260
https://doi.org/10.1134/s1063782609130260
Publikováno v:
Measurement Techniques. 49:1241-1245
Methods of measuring the fundamental parameters of the low-frequency noise of semiconductor devices are considered and versions of instruments for monitoring the noise characteristics of microcircuits, discrete transistors and other semiconductor dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44323d2d25d55c0d368ba1c368c89c22
https://doi.org/10.1007/s11018-006-0267-5
https://doi.org/10.1007/s11018-006-0267-5
Publikováno v:
Russian Microelectronics. 35:337-344
In silicon bipolar junction transistors, electrostatic discharge (ESD) is known to accelerate the degradation of the current gain factor β, which follows a pattern similar to that caused by thermal stress or ionizing irradiation. We use autoregressi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::959259449f89ead703728c862bbde4ae
https://doi.org/10.1134/s106373970605009x
https://doi.org/10.1134/s106373970605009x