Zobrazeno 1 - 3
of 3
pro vyhledávání: '"D. Yu. Polotskiy"'
Autor:
Sergey Bondarenko, Yu. A. Savina, M. A. Belogolovskii, D. Yu. Polotskiy, E. M. Rudenko, I. V. Korotash, A. P. Shapovalov, E. E. Zubov
Publikováno v:
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII. 37:1369-1376
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0ba4c68b4c4459dceca469e0f09ac19
https://doi.org/10.15407/mfint.37.10.1369
https://doi.org/10.15407/mfint.37.10.1369
Autor:
F. Sizov, Z. Tsybrii, V. V. Chmil, D. Yu. Polotskiy, A. P. Shapovalov, Yu. V. Shlapak, A. M. Pylypenko, E.M. Glushechenko, M. A. Belogolovskii, I. V. Korotash, V. M. Chmil, E. M. Rudenko
Publikováno v:
Reports of the National Academy of Sciences of Ukraine. :49-56
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad782908c4e17570d48bdb2cdef086f0
https://doi.org/10.15407/dopovidi2015.12.049
https://doi.org/10.15407/dopovidi2015.12.049
Publikováno v:
2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES.
Modern technologies of precise materials etching use normally the single-discharge systems, e.g., inductively or capacitively coupled plasmas. The energy of ion flux onto the substrate in these systems is controlled by the rf biasing of the substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb223401a8fd464e6ed9c71c1b137e47
https://doi.org/10.1109/msmw.2010.5546061
https://doi.org/10.1109/msmw.2010.5546061