Zobrazeno 1 - 9
of 9
pro vyhledávání: '"D. Westley Miller"'
Autor:
Joseph J. Berry, D. Westley Miller, Michael D. Irwin, K. Xerxes Steirer, Anthony Donakowski, Anthony Ruth, Erin M. Sanehira, Nicholas C. Anderson, Angus Rockett
Publikováno v:
ACS Energy Letters. 6:574-580
Using time-resolved in situ X-ray photoelectron spectroscopy, we identify and suppress rapid degradation mechanisms for cesium-stabilized formamidinium lead iodide perovskite materials used in stat...
Autor:
Mark C. Lonergan, Quynh P. Ngo, Ellis T. Roe, D. Westley Miller, Carolin M. Sutter-Fella, Francesca M. Toma, Ali Javey, Ian D. Sharp
Publikováno v:
ACS Energy Letters
Organometal halide perovskite semiconductors have emerged as promising candidates for optoelectronic applications because of the outstanding charge carrier transport properties, achieved with low-temperature synthesis. Here, we present highly sensiti
Autor:
Carlo Carraro, Maxwell Zheng, Der Hsien Lien, Ali Javey, Joel W. Ager, Hsin-Ping Wang, Charles W. Warren, Ellis T. Roe, Jr-Hau He, D. Westley Miller, Mark C. Lonergan, Peter Lobaccaro, Carolin M. Sutter-Fella, Mark Hettick, Harvey Guthrey, Roya Maboudian, Nancy M. Haegel
Publikováno v:
Chemistry of Materials
The thin-film vapor–liquid–solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and devi
Publikováno v:
Applied Physics Letters. 110:203901
We demonstrate that an analytic relationship between coefficients in the Taylor expansion of the junction capacitance can be exploited to yield more precise determinations of carrier densities in drive level capacitance profiling (DLCP). Improvements
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
Deep level transient spectroscopy has been used to study the spatial properties of the N1-admittance feature in Cu(In, Ga)Se2 devices. By comparison to admittance spectra, the N1-admittance feature has been identified in deep level transient spectra.
Autor:
D. Westley Miller, Jet Meitzner, Peter G. Hugger, Angus Rockett, Charles W. Warren, J. David Cohen, Stephen D. Kevan
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
A new, contactless, microwave photoconductance based technique for the direct measurement of the spectral dependence of free carrier generation efficiency in semiconductors is described and demonstrated. The technique is applied to the search for het
Autor:
Ellis T. Roe, Charles W. Warren, Giles E. Eperon, Mark C. Lonergan, D. Westley Miller, Henry J. Snaith
Publikováno v:
Applied Physics Letters. 109:153902
External quantum efficiency and transient photocapacitance (TPC) spectra were obtained for perovskite solar cells with methylammonium lead triiodide perovskite absorbers formed by either dip or vapor conversion. These measurements reveal an extended
Autor:
D. Westley Miller, Colin A. Wolden, Jennifer T. Heath, Charles W. Warren, Mark C. Lonergan, Jiaojiao Li, D. M. Meysing, Teresa M. Barnes
Publikováno v:
Applied Physics Letters. 106:203903
Two optical sub-bandgap transitions in CdTe thin-film solar cells have been identified using detailed transient photocapacitance and transient photocurrent spectroscopy measurements. A broad response centered at EV + 0.9 eV directly correlates with t
Autor:
Oki Gunawan, David B. Mitzi, D. Westley Miller, Tayfun Gokmen, Charles W. Warren, J. David Cohen
Publikováno v:
Applied Physics Letters. 101:142106
Transient photocapacitance (TPC) spectra were obtained on a series of Cu2ZnSn(Se,S)4 absorber devices with varying Se:S ratios, providing bandgaps (Eg) between 1 eV and 1.5 eV. Efficiencies varied between 8.3% and 9.3% for devices with Eg ≤ 1.2 eV