Zobrazeno 1 - 10
of 41
pro vyhledávání: '"D. Werho"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. :1198-1201
Total reflection X-ray fluorescence (TXRF) using Synchrotron Radiation is likely to be the most powerful non-destructive technique for the analysis of trace metal impurities on silicon wafer surfaces. Of fundamental importance in TXRF is the achievab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d87bd3d51dfe606e87d2a6ae8d925fe6
https://doi.org/10.1016/s0168-9002(01)00569-1
https://doi.org/10.1016/s0168-9002(01)00569-1
Publikováno v:
Surface and Interface Analysis. 31:809-814
A series of organic monolayers containing amine and amide functional groups on silicon and gold substrates were characterized using x-ray photoelectron and infrared spectroscopies. It was determined that the amine-terminated monolayers had 70% of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87ce7feea43cd963a6f82de3a75cfdc9
https://doi.org/10.1002/sia.1125
https://doi.org/10.1002/sia.1125
Publikováno v:
Thin Solid Films. 373:222-226
Synchrotron radiation based total reflection X-ray fluorescence (TXRF) has been shown to meet the critical needs of the semiconductor industry for the analysis of transition metal impurities on silicon wafer surfaces. The current best detection limit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07f56215103386cddb4720a9e11878d6
https://doi.org/10.1016/s0040-6090(00)01139-1
https://doi.org/10.1016/s0040-6090(00)01139-1
Autor:
Alain C. Diebold, Rich Gregory, Barney Lee Doyle, M. Anthony, James Arthur Knapp, D. Werho, T.Q. Hurd, J.C. Banks
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :1223-1228
Heavy Ion Backscattering Spectrometry (HIBS) is a new IBA tool for measuring extremely low levels of surface contamination on very pure substrates, such as Si wafers used in the manufacture of integrated circuits. HIBS derives its high sensitivity th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0e0b7a399ab87f43e72a470fa16ab8f
https://doi.org/10.1016/s0168-583x(97)00817-3
https://doi.org/10.1016/s0168-583x(97)00817-3
Autor:
James Arthur Knapp, X Liu, D. Werho, R Gregory, Alain C. Diebold, Barney Lee Doyle, J.C. Banks, S Schauer, G Carney
Publikováno v:
Spectrochimica Acta Part B: Atomic Spectroscopy. 52:881-886
Total-reflection X-ray fluorescence (TXRF) is widely used for the control of metallic contamination caused by surface preparation processes and silicon materials. At least three companies supply a variety of TXRF systems to the silicon integrated cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d3572891bd0f72860b1ac57d6026ce3
https://doi.org/10.1016/s0584-8547(96)01641-2
https://doi.org/10.1016/s0584-8547(96)01641-2
Publikováno v:
Journal of The Electrochemical Society. 143:2353-2356
Although TiN and TiSi 2 films are widely used in silicon wafer fabs, the possibility of titanium contamination adversely affecting device characteristics remains a great concern. In this study, ion implantation was used to determine the critical leve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97f50ae3009c62b7e3efc2f60b9f5f27
https://doi.org/10.1149/1.1837006
https://doi.org/10.1149/1.1837006
Autor:
Stefan Zollner, Rama I. Hegde, M. Ramon, Rich Gregory, Bruce E. White, E. Luckowski, J.-Y. Nguyen, Matthew W. Stoker, James K. Schaeffer, A. Haggag, X.-D. Wang, B.W. Chan, R. Cotton, C. Capasso, M. Moosa, Yuan-Hung Chiu, S. Kalpat, Dina H. Triyoso, H.-H. Tseng, C. Tracy, L. R. C. Fonseca, D. Roan, M. Raymond, Philip J. Tobin, R. Rai, W.J. Taylor, D. Werho, E.A. Hebert, L.B. La, David C. Gilmer
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
For the first time we report on the development of a novel hafnium zirconate (HfZrOx) gate dielectric with a TaxCy metal gate. Compared to HfO2, the new HfZrOx gate dielectric showed: (1) higher transconductance, (2) less charge trapping, (3) higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28681fec45a94585e964a6dccabefe88
https://doi.org/10.1109/iedm.2005.1609259
https://doi.org/10.1109/iedm.2005.1609259
Autor:
Syd R. Wilson, D. Werho, T.-C. Lee, Hank Shin, Stella Q. Hong, T. Wetteroth, Dieter K. Schroder
Publikováno v:
Applied Physics Letters. 71:3397-3399
Lateral gettering is implemented in thin-film silicon-on-insulator (TFSOI) substrates by introducing crystalline defects in the vicinity of metal-oxide-semiconductor device channel regions prior to gate oxidation. As a result of the gettering a signi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b789386594e07f40019bd7e447894657
https://doi.org/10.1063/1.120347
https://doi.org/10.1063/1.120347
Publikováno v:
MRS Proceedings. 786
Aluminum and copper are widely used for microelectronic interconnect applications. Interfacial oxides can cause device performance degradation and failure by significantly increasing electrical resistance. Interfacial oxide layers found in Al/Ta and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a04cb64fc8e4d0f7a333221ae718b29
https://doi.org/10.1557/proc-786-e6.33
https://doi.org/10.1557/proc-786-e6.33
Autor:
A. Demkov, S. Zollner, R. Liu, D. Werho, M. Kottke, R.B. Gregory, M. Angyal, S. Filipiak, G.B. Adams
Publikováno v:
MRS Proceedings. 612
Fluorinated silica has a dielectric constant lower than that of F-free SiO2 and is a potential interlayer dielectric. We investigate the F-doped SiO2 with ab-initio modeling and various characterization techniques searching to explain the dielectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64fdc1c56f0b3ba8a1426155713f5a1b
https://doi.org/10.1557/proc-612-d3.8.1
https://doi.org/10.1557/proc-612-d3.8.1