Výsledky vyhledávání - "D. W. Gotthold"

Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide

Autor: R. Birkhahn, B. Albert, B. Peres, D. Florescu, D. W. Gotthold, S. P. Guo

Publikováno v: Journal of Electronic Materials. 33:408-411

The AlGaN/GaN heterostructure field-effect transistors (HFETs) were grown on 4H-SiC substrates by metal-organic chemical-vapor deposition (MOCVD) with a range of Al compositions (30–35%) and AlGaN barrier thicknesses. Films with higher strains exhi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1664643c30d310ca595612be39f87aaa
https://doi.org/10.1007/s11664-004-0192-9

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Measurement Of Electric Fields In GaN/AlGaN FETs Using Photoreflectance With Different Excitation Energies

Autor: S. P. Guo, D. W. Gotthold, L.F. Eastman, D. K. Gaskill, B. E. Albert, A. V. Vertiatchikh, O. J. Glembocki

Publikováno v: AIP Conference Proceedings.

Electric fields in the GaN underlying the 2DEG of three GaN/AlGaN field effect transistor (FET) structures measured by photoreflectance (PR) using sub‐gap excitation were found to be about 210–260kVcm−1, indicating the presence of traps. The sa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d9110ac28775e292b241de49e0d69e53
https://doi.org/10.1063/1.1994164

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