Zobrazeno 1 - 10
of 105
pro vyhledávání: '"D. W. Gotthold"'
Publikováno v:
Journal of Electronic Materials. 33:408-411
The AlGaN/GaN heterostructure field-effect transistors (HFETs) were grown on 4H-SiC substrates by metal-organic chemical-vapor deposition (MOCVD) with a range of Al compositions (30–35%) and AlGaN barrier thicknesses. Films with higher strains exhi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1664643c30d310ca595612be39f87aaa
https://doi.org/10.1007/s11664-004-0192-9
https://doi.org/10.1007/s11664-004-0192-9
Autor:
S. P. Guo, D. W. Gotthold, L.F. Eastman, D. K. Gaskill, B. E. Albert, A. V. Vertiatchikh, O. J. Glembocki
Publikováno v:
AIP Conference Proceedings.
Electric fields in the GaN underlying the 2DEG of three GaN/AlGaN field effect transistor (FET) structures measured by photoreflectance (PR) using sub‐gap excitation were found to be about 210–260kVcm−1, indicating the presence of traps. The sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9110ac28775e292b241de49e0d69e53
https://doi.org/10.1063/1.1994164
https://doi.org/10.1063/1.1994164
Publikováno v:
Environmental Science Water Research & Technology; Nov2024, Vol. 10 Issue 11, p2787-2795, 9p
Autor:
Kostretsova, Natalia, Pesce, Arianna, Anelli, Simone, Nuñez, Marc, Morata, Alex, Smeacetto, Federico, Torrell, Marc, Tarancón, Albert
Publikováno v:
Journal of Materials Chemistry A; 9/14/2024, Vol. 12 Issue 34, p22960-22970, 11p
Autor:
Hadavand, Maryam1 (AUTHOR), Jafari, Mohammad Reza2,3 (AUTHOR) mo.jafari@alzahra.ac.ir, Pakpour, Fatemeh1 (AUTHOR) fpakpour@gmail.com, Ghanbari, Davood1 (AUTHOR)
Publikováno v:
Journal of Nanoparticle Research. Mar2021, Vol. 23 Issue 3, p1-14. 14p.
Autor:
Tung, Tran Thanh, Pereira, Ana L. C., Poloni, Erik, Dang, Minh Nhat, Wang, James, Le, Truong-Son Dinh, Kim, Young-Jin, Pho, Quoc Hue, Nine, Md J., Shearer, Cameron James, Hessel, Volker, Losic, Dusan
Publikováno v:
Applied Physics Reviews; Sep2023, Vol. 10 Issue 3, p1-55, 55p
Autor:
Huang, Jian, Zhang, Qian, Yang, Zhengcai, Hu, Hailong, Manuka, Mesfin, Zhao, Yuting, Wang, Xin, Wang, Wufeng, Yang, Rong, Jian, Shouwei, Tan, Hongbo, Li, Xiangguo, Lv, Yang, Tang, Pei, Ma, Baoguo
Publikováno v:
RSC Advances; 2023, Vol. 13 Issue 29, p20081-20092, 12p
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America; 5/9/2023, Vol. 120 Issue 19, p1-10, 71p
Publikováno v:
Polymer Engineering & Science; Jan2023, Vol. 63 Issue 1, p238-248, 11p
Autor:
Protasov, D. protasov@isp.nsc.ru, Bakarov, A., Toropov, A., Ber, B.1, Kazantsev, D.1, Zhuravlev, K.
Publikováno v:
Semiconductors. Jan2018, Vol. 52 Issue 1, p44-52. 9p.