Zobrazeno 1 - 10
of 284
pro vyhledávání: '"D. W. Eckart"'
Publikováno v:
Scanning. 17:51-56
Interface morphology, phase composition, and elemental diffusion of Pt/Ti/Ge/Pd ohmic contacts to both n and p+-GaAs have been investigated as a function of annealing temperature. Structural and chemical results were correlated with specific contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaea9534513c4382159f4a44e6408900
https://doi.org/10.1002/sca.4950170107
https://doi.org/10.1002/sca.4950170107
Autor:
V. Talyansky, Kenneth A. Jones, T. Venkatesan, Michael G. Spencer, R. D. Vispute, D. W. Eckart, Mark C. Wood, K. Xie, K. Wongchotigul
Publikováno v:
Journal of Applied Physics. 83:8010-8015
AlN films grown by either organometallic vapor phase epitaxy (OMVPE) or pulsed laser deposition (PLD) can be used to encapsulate SiC when heated in an argon atmosphere at temperatures at least as high as 1600 °C for times at least as long as 30 min.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::374054a68ec8e52c131d894e210f65eb
https://doi.org/10.1063/1.367893
https://doi.org/10.1063/1.367893
Comparison of PdGeTiPt and NiGeAu ohmic contacts to n-GaAs and PdGeTiPt and TiPd contacts to p+-GaAs
Autor:
B. H. Hughes, Melanie W. Cole, D. W. Eckart, M. A. Crouch, K. P. Hilton, Kenneth A. Jones, W. Y. Han
Publikováno v:
Journal of Applied Physics. 82:1723-1729
NiGeAu and PdGeTiPt ohmic contacts to n-GaAs and TiPd and PdGeTiPt ohmic contacts to p+-GaAs are examined by comparing their contact resistances, chemical intermixing as determined by Auger electron microscopy, interface structure as determined by tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a526c9d798928ceda8a0c0eb013f3ec8
https://doi.org/10.1063/1.365973
https://doi.org/10.1063/1.365973
Publikováno v:
Scanning. 18:379-384
Interfacial microstructure and phase composition of PtTiGePd ohmic contacts to heavily C-doped AlGaAs were investigated as a function of annealing temperatures. Results of the material analyses were used to explain the specific contact resistances me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0465c796b7140e33f29c5909f86fe45
https://doi.org/10.1002/sca.1996.4950180509
https://doi.org/10.1002/sca.1996.4950180509
Autor:
Stephen J. Pearton, C. Yuan, Melanie W. Cole, Richard A. Stall, Fan Ren, W. Y. Han, R. L. Pfeffer, Yicheng Lu, Y. Li, D. W. Eckart, T. Monahan
Publikováno v:
Journal of Applied Physics. 80:278-281
W was found to produce low specific contact resistance (ρc∼8.0×10−5 Ω cm2) ohmic contacts to n+‐GaN (n=1.5×1019 cm−3) with limited reaction between the metal and semiconductor up to 1000 °C. The formation of the β–W2N and W–N interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::786d40d6e41540ac618181287a5d6c33
https://doi.org/10.1063/1.362816
https://doi.org/10.1063/1.362816
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:1046-1049
Magnetron reactive ion etching of the group III‐nitride ternary alloys InxGa1−xN and InxAl1−xN was investigated in BCl3 plasmas and also in SF6/BCl3, H2/BCl3, and Ar/BCl3 gas mixtures. Etch rates were determined as a function of cathode power d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5640685111a2491c203610365c7878bc
https://doi.org/10.1116/1.580131
https://doi.org/10.1116/1.580131
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:1904-1909
Interface morphology, phase composition, and elemental diffusion of Pt/Ti/Ge/Pd ohmic contacts to both n+‐ and p+‐GaAs have been investigated as a function of annealing temperature. Structural and chemical results were correlated with specific co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edf0a239e1d90a314d88c01fbb110c27
https://doi.org/10.1116/1.578980
https://doi.org/10.1116/1.578980
Publikováno v:
Scanning. 15:225-231
Etch characteristics and residual damage incurred via magnetron ion etching of GaAs using three different etch gases, namely, freon-12, SiCl4 and BCl3, at two different power levels has been studied. Transmission electron microscopy, scanning electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed77748ce7cd141fd76574a1056fd4f5
https://doi.org/10.1002/sca.4950150408
https://doi.org/10.1002/sca.4950150408
Autor:
Sezai Elagoz, Melanie W. Cole, H. S. Lee, W. H. Chang, R. P. Moerkirk, D. W. Eckart, S. N. Schauer, R. T. Lareau, Kenneth A. Jones, Roy Clarke, D. C. Fox, W. Vavra
Publikováno v:
Journal of Applied Physics. 72:4773-4780
The microstructure and electrical properties of nonalloyed epitaxial Au‐Ge contacts were studied. Ohmic behavior was obtained after a 3 h anneal at 320 °C with the lowest average contact resistance and specific contact resistivity found to be ∼0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c66e98dabfa8e8f4560971acd3664a3
https://doi.org/10.1063/1.352089
https://doi.org/10.1063/1.352089
Autor:
M. A. Dornath-Mohr, M. W. Cole, H. S. Lee, D. C. Fox, D. W. Eckart, L. Yerke, C. S. Wrenn, R. T. Lareau, W. H. Chang, K. A. Jones, F. Cosandey
Publikováno v:
Journal of Electronic Materials. 19:1247-1255
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07631b93cdb27b9f3ae12d61f5d9f1bd
https://doi.org/10.1007/bf02673339
https://doi.org/10.1007/bf02673339