Výsledky vyhledávání - "D. W. Bullock"

Dynamics of spontaneous roughening on the GaAs(001)-(2×4) surface

Autor: W. F. Oliver, Paul Thibado, Z. Ding, D. W. Bullock, Vincent LaBella

Publikováno v: Journal of Crystal Growth. 251:35-39

The dynamics of a random distribution of spontaneously formed 2D GaAs islands are studied using scanning tunneling microscopy. The equilibrium concentration of islands is easily tuned from 0% to 50% coverage by only changing the As 4 overpressure. Im

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e6b56eac1bc2bece7fd2c65174759d8a
https://doi.org/10.1016/s0022-0248(02)02272-8

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Enhancing the Student‐Instructor Interaction Frequency

Autor: G. Stewart, Paul Thibado, Z. Ding, Vincent LaBella, D. W. Bullock, T. Clingan

Publikováno v: The Physics Teacher. 40:535-541

A 100-fold increase in the frequency of student–teacher interaction has been achieved in a large-enrollment classroom. Students answer in-class questions using personalized hand-held transmitters. Outside the classroom, personalized homework sets a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8b0d6687d222c55791fe91e8f450b51a
https://doi.org/10.1119/1.1534821

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[Untitled]

Autor: Vincent LaBella, Paul Thibado, D. W. Bullock, Z. Ding

Publikováno v: Journal of Superconductivity: Incorporating Novel Magnetism. 15:37-42

A spin-polarized electron current is injected into the GaAs(110) surface at 100 K by using a polycrystalline ferromagnetic Ni scanning tunneling microscopy (STM) tip. The injected electrons recombine to the valence band and emit circularly polarized

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bff8f0ad98c22a0a732ec4276f02a3ba
https://doi.org/10.1023/a:1014023126179

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Origins of GaN(0 0 0 1) surface reconstructions

Autor: Z. Ding, Paul Thibado, Jean Massies, Stéphane Vézian, Fabrice Semond, D. W. Bullock

The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneli

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6fa5498d22c7d77a65db6372a32a7272
http://arxiv.org/abs/1501.00143

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A UNION OF THE REAL-SPACE AND RECIPROCAL-SPACE VIEW OF THE GaAs(001) SURFACE

Autor: Z. Ding, C. Emery, Paul Thibado, Vincent LaBella, D. W. Bullock

Publikováno v: International Journal of Modern Physics B. 15:2301-2333

A union of the real-space and reciprocal space view of the GaAs(001) surface is presented. An optical transmission temperature measurement system allowed fast and accurate temperature determinations of the GaAs(001) substrate. The atomic features of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d791707281f6271446f05552564e31d2
https://doi.org/10.1142/s0217979201005647

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Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstructions

Autor: Vincent LaBella, Paul Thibado, C. Emery, Z. Ding, D. W. Bullock

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1492-1496

The reconstructions of the InP(001) surface prepared by molecular beam epitaxy have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The growth chamber contains a highly accurate t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::236277cb2ce38ab98fd03cd6c0df6897
https://doi.org/10.1116/1.582373

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Monte Carlo derived diffusion parameters for Ga on the GaAs(001)- (2×4) surface: A molecular beam epitaxy–scanning tunneling microscopy study

Autor: Vincent LaBella, D. W. Bullock, Paul Thibado, Z. Ding, W. G. Harter, C. Emery

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1526-1531

The migration of individual Ga atoms on the technologically important GaAs(001)-(2×4) reconstructed surface has been studied as a function of substrate temperature and As4 pressure using a combined molecular beam epitaxy and scanning tunneling micro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57c953d74316c213fe74ef82ca488ed3
https://doi.org/10.1116/1.582379

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Atomic Structure of theGaAs(001)−(2×4)Surface Resolved Using Scanning Tunneling Microscopy and First-Principles Theory

Autor: Paul Thibado, D. W. Bullock, Matthias Scheffler, Peter Kratzer, Haeyeon Yang, Vincent LaBella

Publikováno v: Physical Review Letters. 83:2989-2992

The atomic arrangement of the technologically important As-rich $\mathrm{GaAs}(001)\ensuremath{-}(2\ifmmode\times\else\texttimes\fi{}4)$ reconstructed surface is determined using bias-dependent scanning tunneling microscopy (STM) and first-principles

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ec2f813c051b4dec5ec08ffe8e1c1f98
https://doi.org/10.1103/physrevlett.83.2989

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Activation energy for Ga diffusion on the GaAs(001)-(2×4) surface: an MBE-STM study

Autor: J.B Smathers, Paul Thibado, Z. Ding, D. W. Bullock, Vincent LaBella, Haeyeon Yang

Publikováno v: Journal of Crystal Growth. :88-92

The pure migration of individual Ga atoms on the technologically important GaAs(0 0 1)-(2]4) reconstructed surface has been studied as a function of substrate temperature using a combined molecular beam epitaxy and scanning tunneling microscopy (STM)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4a77157895969211de044e31eb287c5a
https://doi.org/10.1016/s0022-0248(98)01296-2

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