Výsledky vyhledávání - "D. V. Tarkhin"

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

Autor: I. A. Sheremet, D. V. Tarkhin, V. Y. Davydov, Alexander N. Smirnov, Y. G. Shreter, N. I. Bochkareva, Andrey Leonidov, Y. S. Lelikov, M. V. Virko, F. E. Latishev, Andrey Zubrilov, Vladislav Voronenkov, A. V. Pinchuk, V. S. Kogotkov, R. I. Gorbunov

Publikováno v: Semiconductors. 51:115-121

The intense absorption of CO2 laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8dd163bc24aa758a9276a2a7b12da5d0
https://doi.org/10.1134/s1063782617010249

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Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures

Autor: Yu. T. Rebane, D. V. Tarkhin, I. A. Martynov, N. I. Bochkareva, Yu. S. Lelikov, R. I. Gorbunov, Yu. G. Shreter

Publikováno v: Semiconductors. 41:87-93

The spectra of electroluminescence, photoluminescence, and photocurrent for the In0.2Ga0.8N/GaN quantum-well structures are studied to clarify the causes for the reduction in quantum efficiency with increasing forward current. It is established that

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6777503d4854d91880178b7256088203
https://doi.org/10.1134/s1063782607010174

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Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

Autor: D. V. Tarkhin, Yu. T. Rebane, N. I. Bochkareva, R. I. Gorbunov, A. A. Efremov, D. A. Lavrinovich, Yu. G. Shreter

Publikováno v: Semiconductors. 40:605-610

The heat model of a light-emitting diode (LED) with an InGaN/GaN quantum well (QW) in the active region is considered. Effects of the temperature and drive current, as well as of the size and material of the heat sink on the light output and efficien

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4a17d3a3a9ad5c4094c19eca280cf99e
https://doi.org/10.1134/s1063782606050162

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ICP etching of III-nitride based laser structure with Cl2–Ar plasma assisted by Si coverplate material

Autor: Alan Gott, Evgeny Zhirnov, N. I. Bochkareva, Wang Nang Wang, Yu. G. Shreter, Sergei Stepanov, D. V. Tarkhin

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:687-692

ICP etching of GaN, Al0.1Ga0.9N, and a laser diode (LD) structure with Cl2–Ar plasma assisted by Si coverplate material was systematically studied. The influence of the process pressure, rf and ICP power on the etch rate, surface morphology, and se

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::290d2aab1934dfd0e949e4903b41f371
https://doi.org/10.1116/1.1914812

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Kinetic mechanism of surface instability evolution during etching, corrosion, and growth of elastically stressed solids

Autor: B. K. Barakhtin, Yu. T. Rebane, V. V. Rybin, D. V. Tarkhin, Yu. G. Shreter

Publikováno v: Physics of the Solid State. 43:169-175

Corrosion precursors in the form of microgrooves appearing on the elastically compressed surface of a silicon plate under etching are investigated. No corrosion precursors are observed on the elastically stretched surface. This distinguishes the obse

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4ea4284c073667810e71819963d83a2a
https://doi.org/10.1134/1.1340204

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Instability of an elastically compressed silicon surface under etching

Autor: Yu. T. Rebane, Yu. G. Shreter, D. V. Tarkhin, S. A. Khorev

Publikováno v: Physics of the Solid State. 41:1295-1297

An unusual relief in the form of linear defects resembling quasicracks or grooves was observed on a compressionally stressed surface of a bent silicon surface subjected to chemical etching. The average distance between the forming defects was determi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1b4a16f626ff17aa1272ce95cac4ae91
https://doi.org/10.1134/1.1130985

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Silicon counters for nuclear spectrometry

Autor: S. M. Ryvkin, L. V. Maslov, N. B. Strokan, O. A. Matvee, D. V. Tarkhin

Publikováno v: The Soviet Journal of Atomic Energy. 11:861-864

Laboratory models of surface-barrier and diffusion-type silicon n-p counters were developed which were suitable for nuclear spectrometry. The counters have linear pulse height-energy dependence for particles with 60 μ paths (in particular, for α-pa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ab196f505d248a6fe68d941637596939
https://doi.org/10.1007/bf01491182

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Very-fast-response uncooled photodetector based on intraband μ-photoconductivity

Autor: I D Yaroshetskiĭ, D. V. Tarkhin, P M Valov, E. Beregulin, S M Ryvkin

Publikováno v: Soviet Journal of Quantum Electronics. 8:797-799

A new very fast noise-immune uncooled photodetector was developed on the basis of the intraband photoconductivity. The detector was found to have a time resolution of 2×1010 sec and an output voltage up to 8 V. The dependence of the relative photoco

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cba0e3889bf88c344ca6e52bc5b22196
https://doi.org/10.1070/qe1978v008n06abeh010411

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