Zobrazeno 1 - 4
of 4
pro vyhledávání: '"D. V. Tarhin"'
Autor:
R. I. Gorbunov, Yu. T. Rebane, V. Yu. Davydov, M. V. Virko, Vladislav Voronenkov, D. V. Tarhin, N. I. Bochkareva, Andrey Leonidov, Andrey Zubrilov, P. E. Latyshev, Alexander N. Smirnov, Yu. G. Shreter, V. S. Kogotkov, Yu. S. Lelikov
Publikováno v:
Semiconductors. 50:699-704
The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped n+-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::336a2d34633c31010ae9a30923ab102d
https://doi.org/10.1134/s1063782616050250
https://doi.org/10.1134/s1063782616050250
Publikováno v:
physica status solidi (b). 172:53-63
The photoluminescence (PL) spectra of the basic extended defects in Si are obtained. A new classification of the PL lines is proposed according to the squared edge components of the Burger's vectors of the dislocations which surround the structural d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f46a42770df573b1a88b66ee666ecfb7
https://doi.org/10.1002/pssb.2221720107
https://doi.org/10.1002/pssb.2221720107
Publikováno v:
Materials Science Forum. :1321-1326
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee31c7344ea2a47571a3a2ea0a483105
https://doi.org/10.4028/www.scientific.net/msf.83-87.1321
https://doi.org/10.4028/www.scientific.net/msf.83-87.1321
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53b06e3cd04f1403d877b4cbecbfc8dd
http://www.scopus.com/inward/record.url?eid=2-s2.0-0029519324&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0029519324&partnerID=MN8TOARS
