Zobrazeno 1 - 10 of 18 pro vyhledávání: '"D. V. Tarhin"'
1
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n +-GaN substrates
Autor: R. I. Gorbunov, Yu. T. Rebane, V. Yu. Davydov, M. V. Virko, Vladislav Voronenkov, D. V. Tarhin, N. I. Bochkareva, Andrey Leonidov, Andrey Zubrilov, P. E. Latyshev, Alexander N. Smirnov, Yu. G. Shreter, V. S. Kogotkov, Yu. S. Lelikov
Publikováno v: Semiconductors. 50:699-704
The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped n+-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light,
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::336a2d34633c31010ae9a30923ab102d
https://doi.org/10.1134/s1063782616050250
Zobrazit plný text záznamu
2
A Classification of the Dislocation-Related Photoluminescencence in Silicon
Autor: Yu. T. Rebane, Yu. G. Shreter, D. V. Tarhin, A. A. Sitnikova, Yu. S. Lelikov, S. S. Ruvimov
Publikováno v: physica status solidi (b). 172:53-63
The photoluminescence (PL) spectra of the basic extended defects in Si are obtained. A new classification of the PL lines is proposed according to the squared edge components of the Burger's vectors of the dislocations which surround the structural d
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f46a42770df573b1a88b66ee666ecfb7
https://doi.org/10.1002/pssb.2221720107
Zobrazit plný text záznamu
5
Akademický článek
On the detachment of thin ITO films from silicon substrate by microsecond laser irradiation.
Autor: Kirienko, D.1, Berezina, O.1 kirienko@petrsu.ru
Publikováno v: Semiconductors. Jun2017, Vol. 51 Issue 6, p823-827. 5p.
Zobrazit plný text záznamu
7
Akademický článek
Photoluminescence spectra of deformed Si-Ge alloy.
Autor: Tanaka, K., Suezawa, M., Yonenaga, I.
Publikováno v: Journal of Applied Physics; 12/15/1996, Vol. 80 Issue 12, p6991, 6p, 8 Graphs
Zobrazit plný text záznamu
9
Akademický článek
A Classification of the Dislocation-Related Photoluminescencence in Silicon.
Autor: Lelikov, Yu. S., Rebane, Yu. T., Ruvimov, S., Sitnikova, A. A., Tarhin, D. V., Shreter, Yu. G.
Publikováno v: Physica Status Solidi (B); Jul1992, Vol. 172 Issue 1, p53-63, 11p
Zobrazit plný text záznamu
10
Akademický článek
On the origin of intense luminescence at 0.93 eV from multi-crystalline silicon.
Autor: Krause, Christoph, Mankovics, Daniel, Krause, Hans-Michael, Arguirov, Tzanimir, Kittler, Martin
Publikováno v: Journal of Applied Physics; Jul2013, Vol. 114 Issue 3, p034902-034902-6, 1p, 2 Black and White Photographs, 1 Diagram, 3 Graphs
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje