Zobrazeno 1 - 9
of 9
pro vyhledávání: '"D. V. Shestovski"'
Publikováno v:
Pribory i Metody Izmerenij, Vol 15, Iss 2, Pp 142-150 (2024)
Presently it is important to remove mechanically disturbed layer on wafer surface during creation of up-to-date microelectronic products. Rapid thermal treatment with optical pulses of second duration is one of the applicable methods for removing dis
Externí odkaz:
https://doaj.org/article/36c5054ad5644957b7652e90ed066afc
Publikováno v:
Pribory i Metody Izmerenij, Vol 15, Iss 2, Pp 104-109 (2024)
Energy dispersive X-ray microanalysis is one of the main methods for determining the elemental composition of matter. Possessing high locality and a relatively shallow penetration depth of the electron beam (
Externí odkaz:
https://doaj.org/article/2fe456380f61484ea4e55ae54866ceab
Autor:
V. A. Pilipenko, V. A. Solodukha, N. S. Kovalchuk, J. A. Solovjov, D. V. Shestovski, D. V. Zhyhulin
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 7, Pp 20-27 (2022)
This work is devoted to establishing the effect of using rapid thermal processing (RTP) method (450 °C, 7 s) to form an ohmic contact between two layers of aluminum metallization on the electrical parameters and reliability of integrated circuits. T
Externí odkaz:
https://doaj.org/article/44bd0ba977f74bdb9f1123a68e077dce
Publikováno v:
Pribory i Metody Izmerenij, Vol 13, Iss 3, Pp 199-207 (2022)
One of the possible ways of improvement of the surface properties of silicon is the solid phase recrystallization of the surface silicon layer after the chemical-mechanical polishing with application of the rapid thermal treatment with the pulses of
Externí odkaz:
https://doaj.org/article/e69e6153aade436ea96ec6b4f1bbaccd
Autor:
N. S. Kovalchuk, A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, S. V. Demidovich, V. V. Kolos, V. A. Filipenia, D. V. Shestovski
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 4, Pp 44-52 (2022)
Researches of the electrophysical characteristics of gate dielectrics obtained by the rapid thermal processing (RTP) method by two-stage and three-stage processes have been carried out. Each photonic processing (stage) was carried out for 12 s at a c
Externí odkaz:
https://doaj.org/article/48887c34cb924b83b6081a75eee0cb91
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 4, Pp 103-112 (2021)
Investigations of the thickness and optical characteristics of thin SiO2 films obtained by one-, two-, or three-stage rapid thermal processing (RTP) at atmospheric pressure, pulses of 6, 12, and 20 s duration have been carried out. To obtain thin SiO
Externí odkaz:
https://doaj.org/article/5f2fae87157c4b3daffedd7e94debb3a
Autor:
N. S. Kovalchuk, Yu. A. Marudo, A. A. Omelchenko, Vladimir A. Pilipenko, Vitaly A. Solodukha, S. A. Demidovich, V. V. Kolos, E. S. Kozlova, V. A. Filipenya, D. V. Shestovski
Publikováno v:
High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes. 26:59-68
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31ad4ae44caaabd75f950707991bdc9f
https://doi.org/10.1615/hightempmatproc.2022043900
https://doi.org/10.1615/hightempmatproc.2022043900
Autor:
V. Yu. Yavid, V. B. Odzaev, D. V. Shestovski, V. A. Pilipenko, U. S. Prosolovich, Yu.N. Yankovski, V. A. Filipenia, A. N. Pyatlitski
Publikováno v:
Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series. 57:232-241
Herein, the temperature dependences of the static current gain (β) of bipolar n-p-n-transistors, formed by similar process flows (series A and B), in the temperature range 20–125 °С was investigated. The content of uncontrolled technological imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f20e30dc08112612da881c7ca309ddf5
https://doi.org/10.29235/1561-2430-2021-57-2-232-241
https://doi.org/10.29235/1561-2430-2021-57-2-232-241
One of the possible ways of improvement of the surface properties of silicon is the solid phase recrystallization of the surface silicon layer after the chemical-mechanical polishing with application of the rapid thermal treatment with the pulses of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71090cfd6ef99f3e3a2b9844c4d3cbd0
https://rep.bntu.by/handle/data/122374
https://rep.bntu.by/handle/data/122374
