Zobrazeno 1 - 10
of 100
pro vyhledávání: '"D. V. Morgan"'
Autor:
Jones, D. V. Morgan
Publikováno v:
BMJ: British Medical Journal, 1997 Jun . 314(7096), 1766-1766.
Externí odkaz:
https://www.jstor.org/stable/25174888
Autor:
Jones, D. V. Morgan
Publikováno v:
British Medical Journal (Clinical Research Edition), 1983 Aug . 287(6390), 503-503.
Externí odkaz:
https://www.jstor.org/stable/29511973
Autor:
Jones, D. V. Morgan
Publikováno v:
The British Medical Journal, 1947 Feb 01. 1(4491), 195-195.
Externí odkaz:
https://www.jstor.org/stable/20368763
Publikováno v:
Quality and Reliability Engineering International. 16:45-49
The reliability of AlGaInP double-heterostructure (DH) light-emitting diodes (LEDs) operating typically at 600 nm has been studied. To investigate degradation, accelerated aging at ambient temperatures of 50, 75 and 125°C has been carried out for ov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6298cb11e9eaf94f06c497c4daffe7a8
https://doi.org/10.1002/(sici)1099-1638(200001/02)16:1<45::aid-qre302>3.0.co
https://doi.org/10.1002/(sici)1099-1638(200001/02)16:1<45::aid-qre302>3.0.co
Publikováno v:
Semiconductor Science and Technology. 15:67-72
In this paper the effectiveness of indium tin oxide (ITO) is assessed as a current spreading layer (CSL) for AlGaInP visible light emitting diodes (LEDs). A range of device structures has been fabricated in order to test the CSL characteristics. As a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4582bab1012816c6811de96f666287f
https://doi.org/10.1088/0268-1242/15/1/312
https://doi.org/10.1088/0268-1242/15/1/312
Publikováno v:
Semiconductor Science and Technology. 14:615-620
The effect of simultaneously depositing In metallization on n-GaAs using a novel ion-assisted deposition (IAD) technique has been investigated. Using current-voltage, specific contact resistance and secondary ion mass spectroscopy measurements, the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c58780cb7f6745349a40f27651bc3d92
https://doi.org/10.1088/0268-1242/14/7/305
https://doi.org/10.1088/0268-1242/14/7/305
Publikováno v:
Physical Review A. 55:1113-1118
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c7181c77f319d49218a3480dc4d1ac4
https://doi.org/10.1103/physreva.55.1113
https://doi.org/10.1103/physreva.55.1113
Publikováno v:
Journal of Electronic Materials. 25:1832-1836
Low temperature (LT-) grown GaAs has been used as a dielectric in a metal/ dielectric/semiconductor structure, and its capacitance behavior has been investigated by C–VB} and admittance spectroscopy. The C-VB} measurement revealed a barrier height
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4047448a82f3cfd3725e0611d526dd72
https://doi.org/10.1007/bf02657161
https://doi.org/10.1007/bf02657161
Publikováno v:
Semiconductor Science and Technology. 11:1333-1338
Low-temperature (LT) grown GaAs in either an as-grown or annealed condition has been used as a gate dielectric for GaAs field effect transistors (FET). It was found that both types of LT GaAs layers can effectively passivate the device surface states
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b475b676e055510aa20288049668007
https://doi.org/10.1088/0268-1242/11/9/015
https://doi.org/10.1088/0268-1242/11/9/015
Publikováno v:
Journal of Applied Physics. 79:3622-3629
The effects of growth temperature and subsequent annealing temperatures on the electrical properties of the low temperature (LT) grown GaAs have been investigated. It was found that the resistivity of the as‐grown LT‐GaAs layer increased with inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be510a65e24a5bca2dfcfebeaa09fb1b
https://doi.org/10.1063/1.361417
https://doi.org/10.1063/1.361417