Zobrazeno 1 - 10
of 1 780
pro vyhledávání: '"D. V. Morgan"'
Autor:
Wegner, Harvey
Publikováno v:
American Scientist, 1975 Jan 01. 63(1), 97-97.
Externí odkaz:
https://www.jstor.org/stable/27845283
Autor:
Jones, D. V. Morgan
Publikováno v:
BMJ: British Medical Journal, 1997 Jun . 314(7096), 1766-1766.
Externí odkaz:
https://www.jstor.org/stable/25174888
Autor:
Jones, D. V. Morgan
Publikováno v:
British Medical Journal (Clinical Research Edition), 1983 Aug . 287(6390), 503-503.
Externí odkaz:
https://www.jstor.org/stable/29511973
Autor:
Jones, D. V. Morgan
Publikováno v:
The British Medical Journal, 1947 Feb 01. 1(4491), 195-195.
Externí odkaz:
https://www.jstor.org/stable/20368763
Publikováno v:
Quality and Reliability Engineering International. 16:45-49
The reliability of AlGaInP double-heterostructure (DH) light-emitting diodes (LEDs) operating typically at 600 nm has been studied. To investigate degradation, accelerated aging at ambient temperatures of 50, 75 and 125°C has been carried out for ov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6298cb11e9eaf94f06c497c4daffe7a8
https://doi.org/10.1002/(sici)1099-1638(200001/02)16:1<45::aid-qre302>3.0.co
https://doi.org/10.1002/(sici)1099-1638(200001/02)16:1<45::aid-qre302>3.0.co
Publikováno v:
Semiconductor Science and Technology. 15:67-72
In this paper the effectiveness of indium tin oxide (ITO) is assessed as a current spreading layer (CSL) for AlGaInP visible light emitting diodes (LEDs). A range of device structures has been fabricated in order to test the CSL characteristics. As a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4582bab1012816c6811de96f666287f
https://doi.org/10.1088/0268-1242/15/1/312
https://doi.org/10.1088/0268-1242/15/1/312
Publikováno v:
Semiconductor Science and Technology. 14:615-620
The effect of simultaneously depositing In metallization on n-GaAs using a novel ion-assisted deposition (IAD) technique has been investigated. Using current-voltage, specific contact resistance and secondary ion mass spectroscopy measurements, the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c58780cb7f6745349a40f27651bc3d92
https://doi.org/10.1088/0268-1242/14/7/305
https://doi.org/10.1088/0268-1242/14/7/305
Publikováno v:
Physical Review A. 55:1113-1118
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c7181c77f319d49218a3480dc4d1ac4
https://doi.org/10.1103/physreva.55.1113
https://doi.org/10.1103/physreva.55.1113
Publikováno v:
Journal of Electronic Materials. 25:1832-1836
Low temperature (LT-) grown GaAs has been used as a dielectric in a metal/ dielectric/semiconductor structure, and its capacitance behavior has been investigated by C–VB} and admittance spectroscopy. The C-VB} measurement revealed a barrier height
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4047448a82f3cfd3725e0611d526dd72
https://doi.org/10.1007/bf02657161
https://doi.org/10.1007/bf02657161
Publikováno v:
Semiconductor Science and Technology. 11:1333-1338
Low-temperature (LT) grown GaAs in either an as-grown or annealed condition has been used as a gate dielectric for GaAs field effect transistors (FET). It was found that both types of LT GaAs layers can effectively passivate the device surface states
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b475b676e055510aa20288049668007
https://doi.org/10.1088/0268-1242/11/9/015
https://doi.org/10.1088/0268-1242/11/9/015