Zobrazeno 1 - 10
of 112
pro vyhledávání: '"D. V. Lang"'
Publikováno v:
Physica B: Condensed Matter. :21-24
Following irradiation, the gain of silicon bipolar transistors can be improved by annealing at 350 K. We show that both the number of defects measured by deep level transient spectroscopy (DLTS) and the gain can be restored to the post irradiation st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec62364f77d55f793bcaa26bf14b810a
https://doi.org/10.1016/j.physb.2007.08.105
https://doi.org/10.1016/j.physb.2007.08.105
Autor:
Krishnan Raghavachari, D. V. Lang, Julia W. P. Hsu, Mathew D. Halls, Ken W. West, Yueh-Lin Loo
Publikováno v:
The Journal of Physical Chemistry B. 109:5719-5723
Internal photoemission (IPE) studies were performed on molecular diodes in which the alkanedithiol [HS(CH(2))(n)SH, n = 8, 10] molecular layer is sandwiched between Au and GaAs electrodes. The results are compared to those from Au-GaAs Schottky diode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3637b7b1bd62f7e88550df8e8b6b79a4
https://doi.org/10.1021/jp044246s
https://doi.org/10.1021/jp044246s
Autor:
Brian G. Willis, D. V. Lang
Publikováno v:
Thin Solid Films. 467:284-293
Secondary ion mass spectroscopy (SIMS) and electrical measurements have been used to investigate the mechanism of copper transport in dielectric materials. Vacuum bias-temperature-stress (BTS) measurements on circular metal-oxide-semiconductor (MOS)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60ff2a00be43aa99cc8570ec3fd38c1d
https://doi.org/10.1016/j.tsf.2004.04.028
https://doi.org/10.1016/j.tsf.2004.04.028
Publikováno v:
Nano Letters. 3:913-917
We introduce a novel approach, nanotransfer printing (nTP), to fabricate top-contact electrodes in Au/1,8-octanedithiol/GaAs junctions. Current−voltage and photoresponse experiments were conducted to evaluate the nature of electrical contact. Resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25f75ffc984a37c43b6e7dc83486b8b2
https://doi.org/10.1021/nl034207c
https://doi.org/10.1021/nl034207c
Publikováno v:
Bell Labs Technical Journal. 5:150-167
This paper reviews the development of the semiconductor laser — a key component of optical communications. It discusses the tremendous advances in materials and reliability, describes the progress in laser structures, performance, and applications,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00d6ca2e70cc3c40d16896f8f48f3438
https://doi.org/10.1002/bltj.2212
https://doi.org/10.1002/bltj.2212
Autor:
Horst Stormer, Michael J. Manfra, L.J. Mahoney, Wei Pan, K.M. Molvar, D. V. Lang, L. N. Pfeiffer, Ken W. West, Sheyum Syed, Richard J. Molnar, Julia W. P. Hsu, Glen R. Kowach, Nils Weimann, S. N. G. Chu, A. M. Sergent, J. Caissie
Publikováno v:
Journal of Applied Physics. 92:338-345
We report on an extensive study of the growth and transport properties of the two-dimensional electron gas (2DEG) confined at the interface of AlGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) on thick, semi-insulating GaN templates pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a9dcca1d2d0faf379d8dca9493b0424
https://doi.org/10.1063/1.1484227
https://doi.org/10.1063/1.1484227
Autor:
David C. Look, Julia W. P. Hsu, S. Richter, D. V. Lang, Rafael N. Kleiman, Richard J. Molnar, A. M. Sergent
Publikováno v:
Journal of Electronic Materials. 30:115-122
Using several derivatives of scanning force microscopy with conducting tips, we find direct evidence for the existence of a highly compensated donor impurity band in GaN films near the sapphire substrate interface. Scanning current-voltage and capaci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f47d9c3ec331036c4d94fe9dbff4a6b3
https://doi.org/10.1007/s11664-001-0003-5
https://doi.org/10.1007/s11664-001-0003-5
Autor:
Richard J. Molnar, D. V. Lang, Julia W. P. Hsu, Michael J. Manfra, L. N. Pfeiffer, Kirk W. Baldwin
Publikováno v:
Journal of Electronic Materials. 30:110-114
Scanning force microscopy was used to examine the surfaces of AlGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) on GaN templates prepared by hydride vapor phase epitaxy (HVPE). Away from dislocations, the MBE growth replicates the surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f67effb4a1ec6f56a7bbda14868299f4
https://doi.org/10.1007/s11664-001-0002-6
https://doi.org/10.1007/s11664-001-0002-6
Autor:
D. V. Lang, A.M. Sergent, Donald W. Murphy, R. B. van Dover, Christopher D. W. Jones, Y. H. Wong, R. M. Fleming, Glenn B. Alers, M. L. Steigerwald, J. Kwo
Publikováno v:
Journal of Applied Physics. 88:850-862
Ta2O5 is a candidate for use in metal–oxide–metal (MOM) capacitors in several areas of silicon device technology. Understanding and controlling leakage current is critical for successful implementation of this material. We have studied thermal an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48924f2fdaed79d865c1a7c8da9e16c8
https://doi.org/10.1063/1.373747
https://doi.org/10.1063/1.373747
Autor:
W. F. Brinkman, D. V. Lang
Publikováno v:
Reviews of Modern Physics. 71:S480-S488
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a830c780eacc9321cf803a41f91c70e9
https://doi.org/10.1103/revmodphys.71.s480
https://doi.org/10.1103/revmodphys.71.s480