Výsledky vyhledávání - "D. V. Kolyada"

FEATURES OF OPTICAL TRANSITIONS IN GESISN/SI MULTIPLE QUANTUM WELLS

Autor: V. A. Timofeev, V. I. Mashanov, A. I. Nikiforov, I. V. Skvortsov, I. D. Loshkarev, D. V. Kolyada, D. D. Firsov, O. S. Komkov

Publikováno v: Автометрия. 58:28-36

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6548b561a90afbf674c147402e12d00c
https://doi.org/10.15372/aut20220604

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Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers

Autor: V. A. Timofeev, V. I. Mashanov, A. I. Nikiforov, I. D. Loshkarev, I. V. Skvortsov, D. V. Gulyaev, I. V. Korolkov, D. V. Kolyada, D. D. Firsov, O. S. Komkov

Publikováno v: Russian Physics Journal. 64:1505-1512

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4baf29ecc334256ffd6f3f22a23dc524
https://doi.org/10.1007/s11182-021-02483-3

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Fourier-transform infrared photoreflectance spectroscopy of the InSb/InAs/In(Ga,Al)As/GaAs metamorphic heterostructures with a superlattice waveguide

Autor: D. D. Firsov, A. I. Luferau, D. V. Kolyada, M. Yu. Chernov, V. A. Solov’ev, A. D. Andreev, O. S. Komkov

Publikováno v: Journal of the Optical Society of America B. 40:381

Fourier-transform infrared photoreflectance (PR) spectroscopy was used to study the energy spectrum of InSb/InAs/In(Ga,Al)As/GaAs metamorphic heterostructures with a superlattice waveguide at room temperature (RT). Theoretical calculations in the fra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9f3b4c52fe867e738744bd6e9d794202
https://doi.org/10.1364/josab.480669

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Investigation of infrared photoluminescence spectra of Ge1-x-y Si x Sn y /Si nanostructures

Autor: D V Kolyada, A A Karaborchev, D D Firsov, V I Mashanov, V A Timofeev, O S Komkov

Publikováno v: Journal of Physics: Conference Series. 2227:012009

This work investigates the luminescence properties of pseudomorphic nanostructures with Ge1-x-y Si x Sn y /Si superlattices (SL) grown on silicon substrates by molecular beam epitaxy. It was shown that the addition of Sn (y = 0.07) to the alloy layer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5b832f9610c35668cac2ec85404983fa
https://doi.org/10.1088/1742-6596/2227/1/012009

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Structural and optical properties of quasi-2D GaTe layers grown by molecular beam epitaxy on GaAs (001) substrates

Autor: Irina V. Sedova, O. S. Komkov, Sergey V. Sorokin, D V Kolyada, P. S. Avdienko, D. D. Firsov

Publikováno v: Journal of Physics: Conference Series. 1697:012131

Quasi-two-dimensional GaTe layers were grown by molecular beam epitaxy on GaAs (001) substrates at Ts = 450–520°C. The effect of the growth temperature on the GaTe surface morphology has been studied by scanning electron microscopy. It is shown th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::543466149eceb470e866303571e900b2
https://doi.org/10.1088/1742-6596/1697/1/012131

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