Zobrazeno 1 - 10 of 15 pro vyhledávání: '"D. V. Kalinichenko"'
1
Effect of a weak magnetic field and low-energy X-rays on the evolution of Saccharomyces cerevisiae yeast suspension
Autor: L. P. Steblenko, D. V. Kalinichenko, Yu. L. Kobzar, Andrey Yakunov, A. N. Kuryliuk, A. N. Krit, A. I. Nigelska, S. N. Naumenko
Publikováno v: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 11:280-284
The evolution of a Saccharomyces cerevisiae suspension deposited onto the surface of silicon is investigated. Evolution of the yeast is caused by the effect of a weak stationary magnetic field (B = 0.17 T) and low-energy (E = 8 keV) low-dose (D = 104
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::62f1cb480038af5f41985bdf7cfc6466
https://doi.org/10.1134/s1027451016050414
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3
Effect of low-energy X-ray radiation on the electrophysical properties of silicon crystals of n- and p-type conductivity
Autor: A. N. Krit, A. B. Nadtochiy, L. P. Steblenko, S. N. Naumenko, Yu. L. Kobzar, A. N. Kuryliuk, D. V. Kalinichenko, A. A. Podolyan
Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 10:672-675
We study the kinetics of the photovoltage decay in silicon crystals, caused by the effect of lowenergy (E = 8 keV) X-ray radiation. A correlation between radiation-induced changes in the short-term and long-term components of the photovoltage decay a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::31f25b1fb284b4861edb8fb8bf3fd214
https://doi.org/10.1134/s1027451016020361
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5
Features of changes in the microhardness of silicon crystals exposed to low-energy X-ray radiation
Autor: O. N. Krit, A. N. Kurylyuk, P. P. Kogutyuk, S. N. Naumenko, Yu. L. Kobzar, D. V. Kalinichenko, L. P. Steblenko
Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 9:957-960
Features of changes in the microhardness of nand p-type Si crystals exposed to low-energy X-ray radiation (E = 8 keV) at low doses (D = 1.8 × 103 to 3 × 104 Gy) are studied. The changes are classified as a radiation–mechanical effect and depend o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d8fc492bc73e4e1c4a52dca674adb7b5
https://doi.org/10.1134/s1027451015030349
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6
Role of migration barriers in the dynamic behavior of short surface dislocations in silicon crystals
Autor: D. V. Kalinichenko, A. N. Krit, A. N. Kuryliuk, Yu. L. Kobzar, L. P. Steblenko, V. A. Makara
Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 9:646-650
The influence of migration barriers on the mobility of short surface dislocations (length L of ≤100 μm) in Si crystals is analyzed in this paper. The dependence of the migration barrier on the diffusion coefficient of impurities that are dominant
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::696b34c1fc3cc71326f53010d34aa61a
https://doi.org/10.1134/s1027451015030295
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7
Application of Nanofilled Polymer Coatings for Increasing Radiation Resistance of Solar Cells
Autor: A. A. Podolyan, V. N. Kravchenko, A. N. Kuryliuk, S. N. Naumenko, L. A. Voronzova, A. N. Krit, L. N. Yashchenko, L. P. Steblenko, D. V. Kalinichenko, Yu. L. Kobzar
Publikováno v: Springer Proceedings in Physics ISBN: 9783319562445
The effect of soft X-rays with photon energy W = 8 keV on the kinetics of decay photovoltage in solar silicon crystals is studied. The correlation between the radiation-stimulated change in the electrical characteristics of the investigated crystals
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::376015448425bbe40a18e13e71e54ec7
https://doi.org/10.1007/978-3-319-56422-7_20
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8
Interrelation between the impurity states of Si crystals and the dynamic behavior of short surface dislocations
Autor: Yu. L. Kobzar, A. N. Kuryliuk, V. A. Makara, A. N. Krit, L. P. Steblenko, D. V. Kalinichenko
Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 8:1182-1185
The influence of impurity atmospheres on the mobility and shape of short surface dislocations (with a length of L ≤ 100 μm) in Si crystals is considered in this paper. The difference between the evolution of impurity atmospheres in the vicinity of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::95f90a682355d461c388a8878f883b4c
https://doi.org/10.1134/s1027451014060093
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9
Influence of a weak magnetic field on microplasticity of silicon crystals
Autor: V. A. Makara, I. V. Plyushchai, D. V. Kalinichenko, S. N. Naumenko, A. N. Krit, A. N. Kurylyuk, L. P. Steblenko
Publikováno v: Physics of the Solid State. 56:1582-1589
The possibility of magnetic ordering at dangling bonds in dislocation cores has been investigated theoretically. It has been experimentally shown that magnetic ordering in dislocations affects the spin-dependent effects occurring in dislocation cryst
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2c7ef8123bf2b5a09f22f8668e2c7b78
https://doi.org/10.1134/s1063783414080174
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10
Change in the charge and defect-impurity state of silicon for solar-power engineering under the effect of a magnetic field
Autor: L. P. Steblenko, S. N. Naumenko, Yu. L. Kobzar, A. N. Krit, A. B. Nadtochiy, D. V. Kalinichenko, V. A. Makara, O. A. Korotchenkov, A. N. Kuryliuk
Publikováno v: Semiconductors. 48:722-726
The effect of a weak permanent magnetic field on the structure and charge state of silicon for solar-power engineering is investigated. It is revealed that magnetostimulated changes in the defect-impurity state and surface potential have a reversible
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2519fa060db824317d7c2b1a5631b022
https://doi.org/10.1134/s1063782614060189
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