Zobrazeno 1 - 10
of 146
pro vyhledávání: '"D. V. Gulyaev"'
Publikováno v:
Georesursy, Vol 26, Iss 3, Pp 27-32 (2024)
The article outlines the prerequisites and results of using a specialized technology for processing vibrograms obtained during high-performance vibroseismic studies using the “slip-sweep” technology. The goal is to reveal the potential and advant
Externí odkaz:
https://doaj.org/article/07dc6d81e4bb4c339b92630ea1901297
Autor:
V. A. Timofeev, V. I. Mashanov, A. I. Nikiforov, I. D. Loshkarev, I. V. Skvortsov, D. V. Gulyaev, I. V. Korolkov, D. V. Kolyada, D. D. Firsov, O. S. Komkov
Publikováno v:
Russian Physics Journal. 64:1505-1512
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4baf29ecc334256ffd6f3f22a23dc524
https://doi.org/10.1007/s11182-021-02483-3
https://doi.org/10.1007/s11182-021-02483-3
Autor:
K V Feklistov, A G Lemzyakov, I P Prosvirin, A A Gismatulin, A A Shklyaev, Y A Zhivodkov, G К Krivyakin, A I Komonov, А S Kozhukhov, E V Spesivsev, D V Gulyaev, D S Abramkin, A M Pugachev, D G Esaev, G Yu Sidorov
Publikováno v:
Materials Research Express, Vol 7, Iss 12, p 125903 (2020)
RF magnetron-deposited Si\In _2 O _3 :Er films have the structure of the single-crystalline bixbyite bcc In _2 O _3 nanowires bunched into the columns extended across the films. The obtained films have a typical In _2 O _3 optical band gap of 3.55 eV
Externí odkaz:
https://doaj.org/article/fb6f878faf224a02bcb567b91d396ae6
Autor:
V. G. Lapin, D. V. Gulyaev, A. K. Bakarov, A. B. Pashkovskii, K. S. Zhuravlev, V. M. Lukashin, D. Yu. Protasov, A. I. Toropov
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 56:478-484
A new type of AlGaAs/InGaAs/GaAs heterostructures with energy barriers formed in the AlGaAs transistor layers adjacent to the InGaAs channel, modulation-doped with donors and acceptors is presented. The height of the barriers associated with the pote
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5781f431bbe382ca7835ee3a9d40e23
https://doi.org/10.3103/s8756699020050155
https://doi.org/10.3103/s8756699020050155
Autor:
Vyacheslav Timofeev, A. I. Nikiforov, V. I. Mashanov, D. V. Gulyaev, T. A. Gavrilova, Ilya Skvortsov, Anton K. Gutakovskii, Igor Chetyrin
Publikováno v:
AIP Advances. 2020. Vol. 10, № 1. P. 015309-1-015309-7
AIP Advances, Vol 10, Iss 1, Pp 015309-015309-7 (2020)
AIP Advances, Vol 10, Iss 1, Pp 015309-015309-7 (2020)
Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to study the growth of nanostructures in the process of S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31b04c79a001f4e952c1a3c8bbac4dd9
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000792278
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000792278
Autor:
A. S. Kozhukhov, I. D. Loshkarev, Vyacheslav Timofeev, Ilya V. Korolkov, O. S. Komkov, A. I. Nikiforov, V. I. Mashanov, Dmitry D. Firsov, D. V. Gulyaev, Vladimir A. Volodin
Publikováno v:
Applied Surface Science. 573:151615
The phase transitions during the oxidation of polycrystalline tin (β-Sn) were studied. The intense photoluminescence from SnO was observed in the annealing temperature range of 300–400 °C. An increase in the annealing temperature led to a sharp d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37cd73e41d3f0576dd0a82fc9aff4a0e
https://doi.org/10.1016/j.apsusc.2021.151615
https://doi.org/10.1016/j.apsusc.2021.151615
Autor:
Anton K. Gutakovskii, A. I. Nikiforov, Dmitry D. Firsov, D. V. Gulyaev, Ilya Skvortsov, T. A. Gavrilova, Vyacheslav Timofeev, O. S. Komkov, V. I. Mashanov
Publikováno v:
Applied Surface Science. 553:149572
The regularities of the GeSn and SiSn nanostructure formation on Si and Ge(1 0 0) substrates on the vapor–liquid-crystal mechanism were studied. It was shown that either thread-like nanostructures or mushroom-shaped islands containing truncated ico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fae8d2a5d5a7990ce0e761819b39517
https://doi.org/10.1016/j.apsusc.2021.149572
https://doi.org/10.1016/j.apsusc.2021.149572
Publikováno v:
JETP Letters. 106:18-22
The luminescence and structural properties of PbS quantum dots in a Langmuir–Blodgett matrix and after the removal of this matrix have been studied. It has been found that the photoluminescence peak of quantum dots in the matrix is near 1.6 eV, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::717b164ca7080278555e26ea42e04404
https://doi.org/10.1134/s0021364017130082
https://doi.org/10.1134/s0021364017130082
Autor:
V. V. Smolyaninov, D. V. Gulyaev
Publikováno v:
Biophysics. 62:312-320
Continuous filming of the swimming movements of sevruga prelarvae (Acipenser stellatus Pall.) was performed over the first to the fifteenth post-hatching days. These data were used to determine three locomotor characteristics: {f(v, θ), A(v, θ), w(
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c94b426c55cd4c5d30601be642b1b86
https://doi.org/10.1134/s0006350917020257
https://doi.org/10.1134/s0006350917020257
Publikováno v:
Technical Physics Letters. 44:260-262
Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d129e98400717cebfbf57c5600b6d707
https://doi.org/10.1134/s1063785018030240
https://doi.org/10.1134/s1063785018030240