Zobrazeno 1 - 10 of 17 pro vyhledávání: '"D. V. Grigor'ev"'
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Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–x Cd x Te (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures
Autor: D. V. Grigor’ev, D. V. Lyapunov, A. V. Voitsekhovskii, Stanislav M. Dzyadukh, Sergey N. Nesmelov
Publikováno v: Russian physics journal. 2017. Vol. 60, № 1. P. 128-139
Capacitance-voltage (C–V) characteristics of MIS structures based on the graded-gap n-Hg1–x Cd x Te (x = 0.22–0.40) grown by molecular-beam epitaxy were experimentally studied in the temperature range of 9–77 K. The concentrations of majority
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5afc9b820d115aa665b6f24ddd0cdd20
https://doi.org/10.1007/s11182-017-1051-5
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3
Applied optical properties of diamond
Autor: Evgeniy I. Lipatov, D. E. Genin, D. V. Grigor’ev, Victor F. Tarasenko, E. Kh. Baksht, Alexander G. Burachenko, Dmitry V. Beloplotov
Publikováno v: AIP Conference Proceedings. 2019. Vol. 2069. P. 040007-1-040007-8
In our paper we report about the optical properties of diamonds having applied sense. Radiation destruction manifests itself in the form of absorption bands and luminescence of vacancies and interstitials. The charge state of the NV centers depends o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0da06510afe6d76abec6203dffa5cbc1
https://doi.org/10.1063/1.5089850
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4
Effect of the Graded-Gap Layer Composition on the Formation of n + –n − –p Structures in Boron-Implanted Heteroepitaxial Cd x Hg1–x Te Layers
Autor: А. V. Voitsekhovskii, D. V. Grigor’ev, N. Kh. Talipov
Publikováno v: Russian Physics Journal. 57:345-358
Processes of formation of n + –n−–p-structures in boron-implanted heteroepitaxial (HEL) CdxHg1–xTe (CMT) layers of p-type grown by molecular beam epitaxy (HEL CMT MBE) with different compositions of the upper graded-gap layer are studied. It
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6a6448eaba3d07a5602f133126e18281
https://doi.org/10.1007/s11182-014-0246-2
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5
A change in the electro-physical properties of narrow-band CdHgTe solid solutions acted upon by a volume discharge induced by an avalanche electron beam in the air at atmospheric pressure
Autor: Victor F. Tarasenko, M. A. Shulepov, A. P. Kokhanenko, D. V. Grigor’ev, A. G. Korotaev, A. V. Voitsekhovskii
Publikováno v: Russian Physics Journal. 54:1152-1155
The effect of a nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (MCT) epitaxial films of the p-type conduction with the hole concentration 2·1016 cm3 and mobility 500 cm2·V–1·s–1 i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b1bfd555e3ae13fac06859dd7d4289af
https://doi.org/10.1007/s11182-012-9723-7
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6
Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications
Autor: A. V. Dvurechenskii, O. P. Pchelyakov, A. V. Voitsekhovskii, D. V. Grigor’ev, A. P. Kokhanenko, A. I. Nikiforov
Publikováno v: Russian Physics Journal. 53:943-948
Recently much attention has been paid to detailed examination of fundamental properties of Ge/Si heterostructures with Ge nanoclusters. In this work, we consider possible applications of the structures with Ge quantum dots in silicon optoelectonic an
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7305d10160ca5eb18e25da8d0611aa9d
https://doi.org/10.1007/s11182-011-9514-6
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8
Assessment of the possibility of determination of the electrophysical characteristics of Cd x Hg1–x Te p +–n-structures using differential hall measurements
Autor: D. V. Grigor’ev, I. V. Romanov, V. V. Vasil’ev, Alexander V. Voitsekhovskii
Publikováno v: Russian Physics Journal. 52:441-447
The process of reconstuction of the distribution profile of hole concentration in the p +–n structure by the method of differential Hall measurements upon implantation of ions As+ (Е = 190 keV, D = 3.1014 cm-2, j = 0.025 μA/cm2) into epitaxial fi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9c4de2e2bd708c2504d48d580c6c7f93
https://doi.org/10.1007/s11182-009-9255-y
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9
Ion implantation into heteroepitaxial Cd x Hg1–x Te grown by molecular-beam epitaxy
Autor: N. Kh. Talipov, A. V. Voitsekhovskii, D. V. Grigor’ev
Publikováno v: Russian Physics Journal. 51:1001-1015
The results of investigations into the electrophysical properties of heteroepitaxial semiconductor material CdHgTe (CMT) grown by molecular-beam epitaxy (MBE) after ion implantation are reported. The major factors responsible for the differences betw
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f9b9b6b410e79caa8f120bf48f520f2e
https://doi.org/10.1007/s11182-009-9142-6
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10
Defect profiles in graded band-gap layers of P-HgCdTe heteroepitaxial structures under ion-beam etching
Autor: N. Kh. Talipov, M. Posyatsk, I. I. Izhnin, D. V. Grigor’ev, V. S. Volkov, A. G. Korotaev, A. P. Kokhanenko, V. G. Sredin, A. V. Voitsekhovskii
Publikováno v: Russian Physics Journal. 51:936-942
The results of investigations into spatial distribution of donors in p-HgCdTe graded band-gap layers with various composition profiles in the near-surface layer upon ion-beam etching are reported. It is found that the depth of the resulting n+-layer
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::354b5021b5b4baaadecd086c8eb72102
https://doi.org/10.1007/s11182-009-9134-6
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