Zobrazeno 1 - 10
of 49
pro vyhledávání: '"D. V. Daineka"'
Publikováno v:
Surface Science. 523:211-217
The method of threshold photoemission spectroscopy is used to investigate both the ionization energy and photoelectron yield as a function of Cs dosage on the gradually reconstucted GaAs(1 0 0) surface in the transition from As-rich to Ga-rich. The d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e07a77e65c38c5180d52749f827e41a
https://doi.org/10.1016/s0039-6028(02)02357-9
https://doi.org/10.1016/s0039-6028(02)02357-9
Publikováno v:
Surface Science. 519:64-72
We present the study of high temperature (800–1250 °C) oxidation of Si(1 0 0) by large neutral oxygen clusters (600 and 4000 molecules per cluster). The coexistence of passive and active oxidation areas on the surface under cluster beam impact all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be6537918579464092a20f181be83134
https://doi.org/10.1016/s0039-6028(02)02165-9
https://doi.org/10.1016/s0039-6028(02)02165-9
Publikováno v:
Journal of Applied Physics. 92:1132-1136
We report the study of Si(100) oxidation by oxygen clusters with an average size of 2000 molecules at substrate temperatures ranging from 850 to 1100 °C. It has been found that at T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dc38592dc826b134bb6b426dcba6551
https://doi.org/10.1063/1.1480111
https://doi.org/10.1063/1.1480111
Publikováno v:
Physics of the Solid State. 44:989-993
This paper reports on a threshold photoemission study of the variation of electronic properties occurring as Cs is adsorbed on GaAs(100) and the surface transfers gradually from the As-to Ga-rich state. The ionization energy and integrated photoemiss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1138a7508054437885061dbaea509f49
https://doi.org/10.1134/1.1477504
https://doi.org/10.1134/1.1477504
Publikováno v:
Surface Science. 488:193-206
A new model is proposed in order to interpret the surface dependence of the constant and modulated photovoltages in a photoreflectance spectroscopy experiment, with a particular emphasis on low temperature conditions, at which the time of establishme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc347d9b785f1a875dc427b7b0f2c35f
https://doi.org/10.1016/s0039-6028(01)01125-6
https://doi.org/10.1016/s0039-6028(01)01125-6
Publikováno v:
Journal of Experimental and Theoretical Physics. 92:297-303
The method of threshold photoemission spectroscopy is used to investigate the electronic properties of the ultrafine gallium-enriched Cs/GaAs(100) interface. The rearrangement of the spectrum of surface photo-emission as a function of Cs coating, as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13b0933a19128cff818ae71264f3a07e
https://doi.org/10.1134/1.1354687
https://doi.org/10.1134/1.1354687
Autor:
D. V. Daineka, Daniel Paget
Publikováno v:
Surface Science. 441:149-157
We have monitored, using photoreflectance spectroscopy, the temperature dependence of the photovoltage induced by modulated above-bandgap light excitation of GaAs (100) before and after cesium adsorption. For the clean p-type surface in ultrahigh vac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55fceb3ad3d95c9913f2544f196550f4
https://doi.org/10.1016/s0039-6028(99)00844-4
https://doi.org/10.1016/s0039-6028(99)00844-4
Publikováno v:
Journal of Physics: Condensed Matter. 11:6679-6684
Adsorption of K on the Si(111)7 ? 7 surface has been investigated in the submonolayer coverage range at room temperature. The method of threshold photoemission spectroscopy using s- and p-polarized light excitation was employed for studying the evolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d018255bd7790a0967455eb4ef32cbd
https://doi.org/10.1088/0953-8984/11/35/306
https://doi.org/10.1088/0953-8984/11/35/306
Publikováno v:
Journal of Experimental and Theoretical Physics. 87:1167-1171
The electronic structure and ionization energy for the system Ba/Si(100)2×1 have been studied as functions of the submonolayer coverage. It is found that there is an energy gap in the surface states spectrum and that the Ba/Si(100)2×1 interface is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1d8c86d1cc4be47df85fb92fdb0b620
https://doi.org/10.1134/1.558608
https://doi.org/10.1134/1.558608
Publikováno v:
Surface Review and Letters. :91-95
The electronic band structure of the Cs/Si(100)-(2 × 1) and Cs/Si(111)-(7 × 7) interfaces has been studied near the Fermi level at submonolayer coverages. The technique of threshold photoemission spectroscopy with linearly polarized light excitatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1135fc5e4eebe90cc4d29d345df78d5
https://doi.org/10.1142/s0218625x98000190
https://doi.org/10.1142/s0218625x98000190