Zobrazeno 1 - 10
of 168
pro vyhledávání: '"D. V. Chepur"'
Autor:
E. D. Miselyuk, V. L. Gromashevskii, I. D. Turyanitsa, V. V. Krivshich, A. D. Belyaev, D. V. Chepur
Publikováno v:
Soviet Physics Journal. 16:1647-1650
Publikováno v:
Soviet Physics Journal. 23:936-939
The temperature dependences of the permittivity (e) and spontaneous polarization (Ps) measured at high pressures for BixSb1−xSI crystals were used to calculate the coefficients (α,β,γ) of the thermodynamic expansion and to plot the dependences o
Publikováno v:
Soviet Physics Journal. 16:1421-1424
Vitrification regions have been determined for the mixed chalcoiodides of arsenic, antimony, and indium, and some physicochemical and optical properties have been examined. DTA curves have been recorded for the glasses, which reveal three effects: th
Publikováno v:
Soviet Physics Journal. 19:1333-1337
Publikováno v:
Soviet Physics Journal. 17:1198-1201
The glass-forming regions in the K-As(Sb)-S(Se, Te)-Br(I) systems have been defined. It is shown that when the As is replaced by Sb, or S by Se and then Te, the conductivity of the glasses is increased. An increase in the potassium concentration incr
Publikováno v:
Soviet Physics Journal. 21:1561-1564
A model of “multicharge centers” is proposed. Multicharge local centers are due to negatively charged As atoms in a twin coordination and positively charged Se atoms in a triple coordination. The change in the charge state of these centers becaus
Publikováno v:
Journal of Structural Chemistry. 21:69-72
Publikováno v:
Soviet Physics Journal. 12:1125-1128
A technique for synthesizing AsxSb1-xSI is described. The system is shown to form crystals of a limited solid solution. In the region in which a solid solution is formed, the crystals are ferroelectric photoconductors. An arsenic admixture reduces th
Publikováno v:
Physica Status Solidi (a). 15:533-537
Induced impurity photopolarization processes are investigated in SbSI and SbSeI single crystals. It is shown that deep centres not only take part in the photoelectret charge accumulation, but also largely determine the mechanism of its formation. The
Publikováno v:
physica status solidi (b). 21:437-442
A new method is proposed for direct determination of the trapping levels which are responsible for internal polarization in semiconductors. The method is based on the fact that internal polarization, i. e. the internal field, becomes important at low