Zobrazeno 1 - 10
of 22
pro vyhledávání: '"D. V. Bykov"'
Publikováno v:
Безопасность информационных технологий, Vol 19, Iss 1, Pp 130-132 (2012)
In the universities, and in the VSTU as well, a lot of contracts, and other documents are signed every day. The authors of the article have designed a model system based on multiagent.
Externí odkaz:
https://doaj.org/article/0c9db342833843649c230c95c6adf740
Publikováno v:
Безопасность информационных технологий, Vol 19, Iss 1, Pp 129-130 (2012)
In the universities, and in the VSTU as well, a lot of contracts, and other documents are signed every day. The authors of the article have developed electronic document management system for a university
Externí odkaz:
https://doaj.org/article/cb4522e8f8d14b55acb0d9eb97b1a4ba
Autor:
D. V. Bykov
We review the correspondence between integrable sigma models with complex homogeneous target spaces and chiral bosonic (and possibly mixed bosonic/fermionic) Gross-Neveu models. Mathematically, the latter are models with quiver variety phase spaces,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5806e179328cc331e09c1e445165a2bb
http://arxiv.org/abs/2106.15598
http://arxiv.org/abs/2106.15598
Autor:
D. V. Bykov
Publikováno v:
Theoretical and Mathematical Physics. 197:1691-1700
We derive the Feynman rules for the 1/N-expansion of the simplest σ-model in the class of models that we previously proposed. We consider the case where the target space is the flag manifold U(N)/(U(1) × U(1) × U(N − 2)).
Publikováno v:
Russian Microelectronics. 47:487-493
The sub-100-nm CMOS process with a high-κ gate dielectric is one of the key technologies for the fabrication of digital, analog, and RF VLSI circuits and on-chip systems. The influence of ionizing radiation on 45-nm MOS transistors with a high-κ di
Autor:
D. V. Bykov
Publikováno v:
Theoretical and Mathematical Physics. 193:1737-1753
We formulate σ-models of a flag manifold with a zero-curvature representation in the form of a theory of linear “matter fields” interacting with auxiliary gauge fields.
Publikováno v:
Proceedings of Universities. ELECTRONICS. 22:569-581
Autor:
D. V. Bykov
Publikováno v:
Izvestiya of Saratov University. New Series. Series: Philology. Journalism. 17:356-360
Autor:
D. V. Bykov
Publikováno v:
Theoretical and Mathematical Physics. 189:1734-1741
We study a class of σ-models with complex homogeneous target spaces and zero-curvature representations. We find a relation between these models and σ-models with certain m-symmetric target spaces. We also describe a model with the hypercomplex targ
Publikováno v:
Russian Microelectronics. 44:463-467
The mechanisms of the formation of the peak value of the electronic component of the total current through a BISPIN-device in various modes of pulsation are considered. The results of the experimental and theoretical studies of the electronic compone