Zobrazeno 1 - 10
of 32
pro vyhledávání: '"D. Uffmann"'
Publikováno v:
Journal of Crystal Growth. 213:334-339
High-yield two-temperature synthesis and subsequent growth of ZnGeP 2 crystals are investigated. By X-ray phase analysis it has been demonstrated that two-temperature synthesis of ZnGeP 2 has been achieved using binary zinc and germanium phosphides f
Publikováno v:
Carbon. 35:31-34
The formation of diamond surface radicals and their destruction has been investigated using electron paramagnetic resonance (EPR) spectroscopy. The similarity in behavior of diamond paramagnetic susceptibility and thermodesorption with heat-treatment
Publikováno v:
Journal of the European Ceramic Society. 16:753-758
Chemically modified microcrystalline diamond surfaces have been prepared and investigated on the basis of thermodesorption measurements, X-ray diffraction and X-ray photoemission spectroscopy. X-ray investigations and SEM-images show that the synthes
Autor:
C. Adamski, D. Uffmann
Publikováno v:
Microelectronic Engineering. 15:35-38
We have fabricated integrated Si/CoSi 2 /Si-heterotransistors by MBE. The commonbase current gain of the devices is correlated to pinhole size and density. The electrical behaviour is investigated up to an emitter current density of 6000A/cm2. A decr
Publikováno v:
PIMRC
Next generation wireless systems will lead to an integration of existing networks, forming a heterogeneous network. Re-configurable systems will be the enabling technology sharing hardware resources for different purposes. This paper highlights the r
Publikováno v:
Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573).
The next generation of mobile communication systems will lead to an integration of existing networks and access technologies, forming a heterogeneous network. New architectures are needed to serve new requirements from these new systems. The paper hi
Publikováno v:
Seventh International IEEE Conference on VLSI Multilevel Interconnection.
An investigation was conducted of the epitaxial growth of CoSi/sub 2/ on heavily ion implanted Si
Publikováno v:
MRS Proceedings. 482
We have etched GaN grown by plasma source MBE in aqueous solutions of KOH in an electrochemical cell under HeCd laser illumination and additional current control.The etch rate was dramatically enhanced up to 8 μm/h by an applied current density of 6
Publikováno v:
MRS Proceedings. 468
In this work, we present growth of InxGa(1-x)N films by CVD technique and their optical characterization. Experimental results indicate that these films are promising materials for semiconductor device applications. We focus on solar cells and presen
Publikováno v:
MRS Proceedings. 181
The growth of epitaxial CoSi2 by means of SPE on heavily ion implanted Si(111) was investigated with LEED, RBS and TEM. After silicide formation, the dopant distribution in silicide and silicon was determined by means of SIMS. In a self-aligned proce