Zobrazeno 1 - 8
of 8
pro vyhledávání: '"D. T. X. Thao"'
Autor:
Tom Gregorkiewicz, M. S. Bresler, H.H.P.Th. Bekman, J. M. Langer, D. T. X. Thao, Jurgen Michel, Lionel C. Kimerling
Publikováno v:
Physical Review B. 61:5369-5375
Two-color optical spectroscopy is used to directly manipulate shallow levels available in Si:Er samples of different parameters. It is observed that the excitation energy provided by a laser operating in the visible can be temporarily stored by trapp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72f5aa2ae2b6437056648713e6d8a2d5
https://doi.org/10.1103/physrevb.61.5369
https://doi.org/10.1103/physrevb.61.5369
Publikováno v:
Journal of Luminescence, May, s 87-89, 96-100
Journal of Luminescence, 87-89, 96-100. Elsevier
Journal of Luminescence, 87-89, 96-100. Elsevier
Two-color optical spectroscopy is used to directly manipulate shallow levels available in Si:Er samples of different parameters. It is shown that Er photoluminescence can be quenched with a free-electron laser pulse applied shortly after the band-to-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2efa2de13cf760589c6ef51a0ec23570
https://doi.org/10.1016/S0022-2313(99)00237-9
https://doi.org/10.1016/S0022-2313(99)00237-9
Publikováno v:
Semiconductors. 33:598-602
The intensity of the photoluminescence of erbium in silicon is analyzed by a model which takes into account the formation of free excitons, the binding of excitons to erbium ions, the excitation of inner-shell 4f electrons of erbium ions and their su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::570ee6b7dffe4d6eadafdc1bfe6d27c6
https://doi.org/10.1134/1.1187736
https://doi.org/10.1134/1.1187736
Publikováno v:
Physica B-Condensed Matter, 273-274, 326-329. Elsevier
An enhancement of 1.5 μm Si : Er photoluminescence by a mid-infrared pulse from a free-electron laser is investigated in detail. It is concluded that the effect is a consequence of defect-related energy storage in Si : Er samples. Carriers generated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be62238f2e66184bd74d164248cc36ed
https://doi.org/10.1016/S0921-4526(99)00467-6
https://doi.org/10.1016/S0921-4526(99)00467-6
Autor:
H.H.P.T. Bekman, Tom Gregorkiewicz, C.J.G.M. Langerak, I. Tsimperidis, Jurgen Michel, D. T. X. Thao, Lionel C. Kimerling
Publikováno v:
Journal of Luminescence, 1-4, 80, 291-295
Journal of Luminescence, 80(1-4), 291-295. Elsevier
Journal of Luminescence, 80, 291-295
Journal of Luminescence, 80(1-4), 291-295. Elsevier
Journal of Luminescence, 80, 291-295
We investigate the influence of infrared illumination using a free-electron laser on the photoluminescence of erbium-implanted silicon material. In addition to the earlier reported quenching of the Er-related photoluminescence due to dissociation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::156da44743d26682612f0fa0bdbc80e5
https://doi.org/10.1016/s0022-2313(98)00114-8
https://doi.org/10.1016/s0022-2313(98)00114-8
Publikováno v:
Applied Physics Letters, 75, 4121-4123. American Institute of Physics
Results of a two-color spectroscopy in the visible and the mid-infrared on erbium-doped silicon (Si:Er) are presented. In the experiments, pulsed beam provided by a free-electron laser is directed on a sample under primary above-band-gap excitation w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa35b242621895376bf3dd3a4c0bd60f
https://doi.org/10.1063/1.125556
https://doi.org/10.1063/1.125556
Publikováno v:
Journal of Applied Physics, 88, 1443-1455. American Institute of Physics
Photoluminescence measurements have been made on float-zone and Czochralski-grown silicon samples which were doped with erbium by ion implantation. The characteristic luminescence spectra in the wavelength range between 1.5 and 1.6 μm were observed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ab253e1080ab89941c6aa78263d215a
https://dare.uva.nl/personal/pure/en/publications/photoluminescence-of-erbiumdoped-silicon-excitation-power-and-temperature-dependence(61cfc266-9c33-402b-80ae-713ebb370bcf).html
https://dare.uva.nl/personal/pure/en/publications/photoluminescence-of-erbiumdoped-silicon-excitation-power-and-temperature-dependence(61cfc266-9c33-402b-80ae-713ebb370bcf).html
Publikováno v:
Diffusion and defect data, solid state data. Part B, Solid state phenomena, 69-70, 359-364. Scientific.net
Scopus-Elsevier
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc24d2ebd5bec261da679765eb8991b4
https://dare.uva.nl/personal/pure/en/publications/photoluminescence-of-erbiumdoped-silicon-temperature-dependence(a7e28e49-2bf9-4964-8fe6-616947d0a27a).html
https://dare.uva.nl/personal/pure/en/publications/photoluminescence-of-erbiumdoped-silicon-temperature-dependence(a7e28e49-2bf9-4964-8fe6-616947d0a27a).html