Zobrazeno 1 - 10
of 16
pro vyhledávání: '"D. T. Grider"'
Autor:
Mehmet C. Öztürk, G. Harris, D. T. Grider, Dennis M. Maher, Stanton P. Ashburn, Jimmie J. Wortman
Publikováno v:
Journal of Electronic Materials. 24:1369-1376
In this paper, a novel raised p+−n junction formation technique is presented. The technique makes use ofin- situ doped, selectively deposited Si0.7Ge0.3 as a solid diffusion source. In this study, the films were deposited in a tungsten halogen lamp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e28261a13ac85b7bb2422df4e441d20c
https://doi.org/10.1007/bf02655450
https://doi.org/10.1007/bf02655450
Publikováno v:
Journal of Electronic Materials. 21:805-810
Polycrystalline SiGe etches that are selective to silicon dioxide as well as silicon are needed for flexibility in device fabrication. A solution of NH4OH, H2O2, and H2O has been found to selectivity etch polycrystalline silicon-germanium alloys over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cf00df402d25263b9fd6afda5363840
https://doi.org/10.1007/bf02665519
https://doi.org/10.1007/bf02665519
Publikováno v:
Journal of Electronic Materials. 21:61-64
In-situ doped polycrystalline SixGe1-x (x = 0.7) alloys were deposited by rapid thermal chemical vapor deposition (RTCVD) using the reactive gases SiH2Cl2, GeH4 and B2H6 in a H2 carrier gas. The depositions were performed at a total pressure of 4.0 T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a06e555f1e3c913dc4d4241a641c50c
https://doi.org/10.1007/bf02670921
https://doi.org/10.1007/bf02670921
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 4:155-165
Rapid thermal processing (RTP) has been considered from a manufacturing point of view as a potential technology for depositing thin films by low-pressure chemical vapor deposition (LPCVD) in a single-wafer manufacturing environment. The results of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d819946137a1321305669b1aa3b39a8
https://doi.org/10.1109/66.79727
https://doi.org/10.1109/66.79727
Autor:
M. C. Öztürk, D. T. Grider, J. J. Wortman, M. A. Littlejohn, Y. Zhong, D. Batchelor, P. Russell
Publikováno v:
Journal of Electronic Materials. 19:1129-1134
In this study, low pressure chemical vapor deposition of pure germanium on silicon and silicon dioxide has been considered for new applications in future ultra large scale integration (ULSI) technologies. Germanium depositions were performed in a lam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::846731458c51773ada7ce888c6961c8f
https://doi.org/10.1007/bf02651993
https://doi.org/10.1007/bf02651993
Publikováno v:
Applied Physics Letters. 57:2092-2094
Low‐pressure chemical vapor deposition of Si1−xGex alloys in a cold wall, lamp‐heated rapid thermal processor was studied. Alloys were deposited using the reactive gases GeH4 and SiH2Cl2 in a hydrogen carrier gas. The depositions were performed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63756ccea0b511466433a6b267a4e3e8
https://doi.org/10.1063/1.103951
https://doi.org/10.1063/1.103951
Publikováno v:
MRS Proceedings. 320
In this paper we present results on solid state reactions between Ti and Si1−xGex alloys selectively deposited onto Si (100) substrates using rapid thermal annealing (RTA) for contact applications in novel device structures. Germanium concentration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9ecbf6bf80ac5fc2813dc6f9add6c82
https://doi.org/10.1557/proc-320-311
https://doi.org/10.1557/proc-320-311
Publikováno v:
MRS Proceedings. 303
In this paper, we report electrical characterization of raised source/drain MOS transistors fabricated using selectively deposited, in-situ boron doped SixGe1-x as a solid diffusion source to form the source/drain junctions. The alloy can be deposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2ecae7b6b19de9a3b93179cc0eb20a0
https://doi.org/10.1557/proc-303-37
https://doi.org/10.1557/proc-303-37
Publikováno v:
MRS Proceedings. 303
Selectively deposited Si0.7Ge0.3 has been investigated as a potential diffusion source for fabricating ultra-shallow junctions in Si. Rapid thermal chemical vapor deposition (RTCVD) was used to selectively deposit Si0.7Ge0.3 on Si using SiH2C12, GeH4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8314a4c3cbafd45e3f488f0d8247b3cd
https://doi.org/10.1557/proc-303-31
https://doi.org/10.1557/proc-303-31
Publikováno v:
Crucial Issues in Semiconductor Materials and Processing Technologies ISBN: 9789401052030
In this work, low pressure chemical vapor deposition (LPCVD) of SixGe1-x on Si and SiO2 has been considered for new applications in future ultra large scale integration (ULSI) technologies. Depositions were performed in a lamp heated cold-wall rapid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0350646efc3d4cc54746464283885aa4
https://doi.org/10.1007/978-94-011-2714-1_5
https://doi.org/10.1007/978-94-011-2714-1_5
