Zobrazeno 1 - 10
of 147
pro vyhledávání: '"D. T. Clark"'
Autor:
D. T. Clark, McIntosh, Rar Young, A. B. Horsfall, D L Gordon, Sean Wright, Muhammad Idris, Ming Hung Weng
Publikováno v:
Materials Science Forum. 924:854-857
A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd58924dc11b822a672961322abc4e1e
https://doi.org/10.4028/www.scientific.net/msf.924.854
https://doi.org/10.4028/www.scientific.net/msf.924.854
Autor:
E.P. Ramsay, A. B. Horsfall, D. T. Clark, R.A.R. Young, Nicholas G. Wright, Dave A. Smith, Ming Hung Weng, Muhammad Idris, A.E. Murphy, H.K. Chan
Publikováno v:
Materials Science Forum. 897:513-516
Operation of SiC MOSFETs beyond 300°C opens up opportunities for a wide range of CMOS based digital and analogue applications. However the majority of the literature focuses only on the optimization of a single type of MOS device (either PMOS or mor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc8186dc7023c01e66274b4c44ca4dab
https://doi.org/10.4028/www.scientific.net/msf.897.513
https://doi.org/10.4028/www.scientific.net/msf.897.513
Autor:
D. T. Clark, A.E. Murphy, H.K. Chan, D. A. Smith, Ming Hung Weng, Alton B. Horsfall, R.A.R. Young, Muhammad Idris, E.P. Ramsay
Publikováno v:
Materials Science Forum. 858:631-634
We demonstrate the influence of enhancing the dielectric film used to form the gate in complimentary MOS circuits, designed for high temperature operation. The data show that the characteristics of both n-MOS and p-MOS capacitors and transistors have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03550d2cd722cf05f3d2396c3aab6a7d
https://doi.org/10.4028/www.scientific.net/msf.858.631
https://doi.org/10.4028/www.scientific.net/msf.858.631
Autor:
Alton B. Horsfall, Robin. F. Thompson, R.A.R. Young, B.J.D. Furnival, Craig T. Ryan, D. T. Clark, E.P. Ramsay, A.E. Murphy, Ming Hung Weng, Dave A. Smith
Publikováno v:
Materials Science Forum. :492-495
We present the influence of phosphorous auto-doping on the characteristics of the oxide interface in 4H-SiC following high temperature gate oxide annealing. IV characteristics show no evidence of direct tunnelling breakdown; however Fowler Nordheim (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::142b8de38c9d6642aafa4d25a626b808
https://doi.org/10.4028/www.scientific.net/msf.821-823.492
https://doi.org/10.4028/www.scientific.net/msf.821-823.492
Autor:
Ming Hung Weng, Robin. F. Thompson, E.P. Ramsay, Dave A. Smith, H.K. Chan, R.A.R. Young, A.D. Murphy, D. T. Clark, Alton B. Horsfall
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2015:000033-000036
The potential to thermally grow SiO2 on silicon carbide has resulted in it becoming the technology of choice to realise high temperature CMOS circuits. The challenge to achieve a high quality gate stack relies on engineering the metal-insulator-semic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a20c7ddd827596dd665f624f569ffd0
https://doi.org/10.4071/hiten-session1-paper1_6
https://doi.org/10.4071/hiten-session1-paper1_6
Autor:
Lucy Claire Martin, D. T. Clark, Alton B. Horsfall, R.A.R. Young, Nicholas G. Wright, A.E. Murphy, H.K. Chan, Jonathan P. Goss, Dave A. Smith, E.P. Ramsay, Robin. F. Thompson
Publikováno v:
Materials Science Forum. :428-431
Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14aeedde944d64df41cd4c40671a7f4b
https://doi.org/10.4028/www.scientific.net/msf.778-780.428
https://doi.org/10.4028/www.scientific.net/msf.778-780.428
Autor:
A. B. Horsfall, Nicholas G. Wright, E.P. Ramsay, D. T. Clark, R.A.R. Young, Ming Hung Weng, Muhammad Idris, A.E. Murphy, H.K. Chan
Publikováno v:
Journal of applied physics, 2016, Vol.120(21), pp.214902 [Peer Reviewed Journal]
In this paper, the effect of inclusion of phosphorous (at a concentration below 1%) on the high temperature characteristics (up to 300 °C) of the SiO2/SiC interface is investigated. Capacitance–voltage measurements taken for a range of frequencies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5dc7b0808b7cbbd71ca2423e39077f23
http://dro.dur.ac.uk/26387/1/26387.pdf
http://dro.dur.ac.uk/26387/1/26387.pdf
Autor:
D. T. Clark, Robin. F. Thompson, E.P. Ramsay, R.A.R. Young, Jennifer D. Cormack, Stephen J. Finney, A.E. Murphy, Dave A. Smith
Publikováno v:
Materials Science Forum. :1065-1068
Silicon Carbide devices are capable of operating as a semiconductor at high temperatures and this capability is being exploited today in discrete power components, bringing system advantages such as reduced cooling requirements [1]. Therefore there i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7ac660e541d58fcaf93d758fb1c10b6
https://doi.org/10.4028/www.scientific.net/msf.740-742.1065
https://doi.org/10.4028/www.scientific.net/msf.740-742.1065
Autor:
A.E. Murphy, Lucy Claire Martin, Nicholas G. Wright, E.P. Ramsay, D. T. Clark, Jennifer D. Cormack, Dave A. Smith, Alton B. Horsfall, Robin. F. Thompson, R.A.R. Young
Publikováno v:
Materials Science Forum. :891-894
The development of silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key-enabling step in the realisation of low power circuitry for high-temperature applications. This paper describes investigations using the charge pumping techniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b91a929cfba4de130bffd896fe10c59
https://doi.org/10.4028/www.scientific.net/msf.740-742.891
https://doi.org/10.4028/www.scientific.net/msf.740-742.891
Autor:
R.A.R. Young, Nicolas G. Wright, Dave A. Smith, Jennifer D. Cormack, D. T. Clark, Robin. F. Thompson, A.E. Murphy, Lucy Claire Martin, E.P. Ramsay, Alton B. Horsfall
Publikováno v:
Materials Science Forum. :773-776
The recent development of silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key enabling step in the realisation of low power circuitry for high temperature applications, such as aerospace and well logging. This paper describes inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2fdd5ad095108a785d8515efdef3a72
https://doi.org/10.4028/www.scientific.net/msf.717-720.773
https://doi.org/10.4028/www.scientific.net/msf.717-720.773