Local Schottky contacts of embedded Ag nanoparticles in Al

Autor: O Ibrahim, Elmi, O, Cristini-Robbe, M Y, Chen, B, Wei, R, Bernard, D, Yarekha, E, Okada, S, Ouendi, X, Portier, F, Gourbilleau, T, Xu, D, Stiévenard

Publikováno v: Nanotechnology. 29(28)

This paper describes an original design leading to the field effect passivation of Si n

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::3bb12f2bf7f595668d8c7656553154b4
https://pubmed.ncbi.nlm.nih.gov/29697055

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

Autor: D H K Murthy, T Xu, W H Chen, A J Houtepen, T J Savenije, L D A Siebbeles, J P Nys, C Krzeminski, B Grandidier, D Stiévenard, P Pareige, F Jomard, G Patriarche, O I Lebedev

Publikováno v: Nanotechnology
Nanotechnology, 2011, 22 (31), pp.315710. ⟨10.1088/0957-4484/22/31/315710⟩
Nanotechnology, Institute of Physics, 2011, 22, pp.315710-1-6. ⟨10.1088/0957-4484/22/31/315710⟩
Nanotechnology, Institute of Physics, 2011, 22 (31), pp.315710. ⟨10.1088/0957-4484/22/31/315710⟩

6pp; International audience; From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13063ec8743c156083d7f1683e3a46c3

STM spectroscopy on semiconductors

Autor: D. Stiévenard

Publikováno v: Stress and strain in epitaxy
HANDBUCKEN M., DELVILLE J.P. Stress and strain in epitaxy, Elsevier, pp.243-286, 2001

Publisher Summary The chapter shows the application of scanning tunneling microscope (STM) spectroscopy on semiconductors that helps to get local spectroscopic information on defects, low-dimensional nanostructures, or organic molecules. STM is one o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1757d57830bc9bd0432036451358952
https://hal.archives-ouvertes.fr/hal-00132068

Evolution of the density of states on going from a two- to a zero-dimensional semiconductor.

Autor: Z. Hens, B. Grandidier, D. Deresmes, G. Allan, C. Delerue, D. Stiévenard, D. Vanmaekelbergh

Publikováno v: Europhysics Letters; Mar2004, Vol. 65 Issue 6, p809-815, 7p

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.