Zobrazeno 1 - 10
of 48
pro vyhledávání: '"D. Spirkoska"'
Autor:
Gerhard Abstreiter, Wai Son Ko, Xiaodong Wang, D. Spirkoska, Connie J. Chang-Hasnain, Ilaria Zardo, Sara Yazji, Jonathan J. Finley, Kar Wei Ng
Publikováno v:
ACS Nano, 8(11), 11440-11446. American Chemical Society
We use low-temperature microphotoluminescence and photoluminescence excitation spectroscopy to measure the valence band parameters of single wurtzite InGaAs nanoneedles. The effective indium composition is measured by means of polarization-dependent
Autor:
Gerhard Abstreiter, Anna Fontcuberta i Morral, Matthias Heigoldt, Jordi Arbiol, J. R. Morante, D. Spirkoska
Publikováno v:
Small. 4:899-903
Keywords: molecular beam epitaxy ; nanowires ; photoluminescence ; quantum wells ; Cleaved Edge Overgrowth ; Core-Shell ; Growth ; Electron ; Silicon ; Mechanism ; Diffusion ; Wires ; Au Reference EPFL-ARTICLE-148571doi:10.1002/smll.200701091 Record
Autor:
Martin Heiß, D. Spirkoska, Gerhard Abstreiter, Anna Fontcuberta i Morral, Eva Riedlberger, Max Bichler
Publikováno v:
Journal of Crystal Growth. 310:1049-1056
Selective deposition of GaAs-based microstructures on a patterned SiO2/GaAs substrate was realized by molecular beam epitaxy. The growth mechanism was investigated experimentally by studying both the diffusion and desorption mechanisms of GaAs on SiO
Autor:
Stefanie Morkötter, Jonathan J. Finley, Bernhard Loitsch, Lincoln J. Lauhon, Gerhard Abstreiter, Sonja Matich, Nari Jeon, D. Spirkoska, Daniel Rudolph, Markus Döblinger, E. A. Hoffmann, Gregor Koblmüller
Publikováno v:
Nano letters. 15(5)
Strong surface and impurity scattering in III-V semiconductor-based nanowires (NW) degrade the performance of electronic devices, requiring refined concepts for controlling charge carrier conductivity. Here, we demonstrate remote Si delta (δ)-doping
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 5:353-355
Modulation doped AlGaAs/GaAs core-shell nanowire structures were grown by molecular beam epitaxy. A Si delta-doping was introduced in the AlGaAs shell around the {110} facets of the GaAs core. The wires are typically highly resistive at low temperatu
Autor:
Walter R. L. Lambrecht, A. Fontcuberta i Morral, Al. L. Efros, Tawinan Cheiwchanchamnangij, Gerhard Abstreiter, D. Spirkoska
Publikováno v:
Physical Review B. 85
We conducted temperature-dependent measurements of the photoluminescence (PL) polarization on GaAs nanowires (NWs) with polytypic zinc-blende/wurtzite structure in order to probe the symmetry and energy structure of the valence band in the wurtzite s
Autor:
D. Spirkoska, A. Efros, S. Conesa-Boj, J. R. Morante, J. Arbiol, A. Fontcuberta i Morral, G. Abstreiter, Jisoon Ihm, Hyeonsik Cheong
Publikováno v:
AIP Conference Proceedings.
The structural and optical properties of GaAs nanowire with mixed zinc‐blende/wurtzite structure are presented. High resolution transmission electron microscopy indicates the presence of a variety of shorter and longer segments of zinc‐blende or
Autor:
Joan Ramon Morante, Anders Gustafsson, Michael Kaniber, Matthias Heigoldt, Lars Samuelson, Frank Glas, Ilaria Zardo, Sonia Conesa-Boj, Gerhard Abstreiter, Francesca Peiró, Jordi Arbiol, Mhairi Gass, Sònia Estradé, A. Fontcuberta i Morral, D. Spirkoska, A Bleloch, J. Rossler
Publikováno v:
Physical Review B. 80
The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal ph
Autor:
Joan Ramon Morante, Sonia Conesa-Boj, J. M. Rebled, Anna Fontcuberta i Morral, Gerhard Abstreiter, Francesca Peiró, Matthias Heigoldt, D. Spirkoska, Jordi Arbiol
Publikováno v:
2009 Spanish Conference on Electron Devices.
(S) TEM tomography is used as a complementary tool to characterize AlAs-GaAs coaxial nanowires. These nanostructures have been grown on two different GaAs substrate orientations using molecular-beam epitaxy (MBE). The results show that quantum wells
Autor:
C. Colombo, Matthias Heigoldt, D. Spirkoska, Gerhard Abstreiter, A. Fontcuberta i Morral, Martin Heiß
Publikováno v:
Advances in Solid State Physics ISBN: 9783540858584
The synthesis and properties of catalyst-free III–V nanowires with MBE is reviewed. The two main methods are Selective Area Epitaxy and gallium-assisted synthesis. The growth mechanisms are reviewed, along with the design possibilities of each tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7583f6e4b20f79be610f4a6802bf1c0
https://doi.org/10.1007/978-3-540-85859-1_2
https://doi.org/10.1007/978-3-540-85859-1_2