Zobrazeno 1 - 10
of 36
pro vyhledávání: '"D. Snigurenko"'
Autor:
Renata Ratajczak, Piotr Dłużewski, D. Snigurenko, M. Stachowicz, K. Morawiec, K. Mazur, Elzbieta Guziewicz, Cyprian Mieszczynski, Andrzej Turos, Tomasz A. Krajewski, Bartlomiej S. Witkowski
Publikováno v:
Thin Solid Films. 643:7-15
Epitaxial ZnO films implanted with ytterbium have been studied by combination of channeling Rutherford backscattering spectrometry and Hall measurements. This approach is able to shed more light onto the difficult problem of optical activation of Yb
Autor:
Slawomir Prucnal, Renata Ratajczak, Cyprian Mieszczynski, Elzbieta Guziewicz, Wolfgang Skorupa, Roman Böttger, J. Gaca, M. Wojcik, M. Stachowicz, Andrzej Turos, René Heller, Johannes von Borany, D. Snigurenko
Publikováno v:
Thin Solid Films 643(2017), 24-30
Epitaxial thin ZnO films grown by Atomic Layer Deposition were implanted with 150 keV Pr ions to a fluence of 1 × 10 15 at/cm 2 . Implanted samples were subjected to two different kinds of annealing: rapid thermal annealing (RTA) and millisecond-ran
Autor:
Petro Smertenko, Tomasz A. Krajewski, Elzbieta Guziewicz, E. Lusakowska, Krzysztof Kopalko, Rafal Jakiela, D. Snigurenko, G. Luka
Publikováno v:
Journal of Alloys and Compounds. 693:1164-1173
This paper is devoted to the electrophysical diagnostics of the ZnO-based rectifying structures in which the semiconducting oxide layer has been obtained by the low-temperature (80 °C ≤ T ≤ 130 °C) Atomic Layer Deposition (ALD) process. For the
Autor:
Jacek Waluk, D. Snigurenko, Elzbieta Guziewicz, Iwona Gawryszewska, Aneta Aniela Kowalska, Evelin Witkowska, Anna Skoczyńska, Agnieszka Kamińska
Publikováno v:
Analytical and Bioanalytical Chemistry
A highly efficient recognition unit based on surface-enhanced Raman spectroscopy (SERS) was developed as a promising, fast, and sensitive tool for detection of meningococcal meningitis, which is an extremely serious and often fatal disease of the ner
Autor:
Michał A. Borysiewicz, Michal Kozubal, Rafal Jakiela, Jacek Ratajczak, Karolina Pągowska, Elżbieta Dynowska, Jan Dyczewski, Elzbieta Guziewicz, Adam Barcz, D. Snigurenko
Publikováno v:
Acta Physica Polonica A. 128:832-835
Autor:
D. Jarosz, Adrian Sulich, Rafal Jakiela, D. Snigurenko, W. Paszkowicz, P. Sybilski, E. Przezdziecka, E. Guziewicz
Publikováno v:
Journal of Applied Physics. 127:075104
Understanding the origin of the strong difference of electrical parameters between as grown and annealed undoped ZnO films prepared at a temperature range of 100–200 °C by thermal atomic layer deposition is essential for their future applications.
Autor:
Slawomir Prucnal, D. Snigurenko, M. Stachowicz, Andrzej Turos, Cyprian Mieszczynski, Renata Ratajczak, Wolfgang Skorupa, Elzbieta Guziewicz
Publikováno v:
Journal of Applied Physics 121(2017), 075101
In this paper, we present the detailed study of optical and structural properties of Yb implanted single ZnO crystals. Hydrothermally grown wurtzite (0001) ZnO crystals were implanted with 150 keV Yb ions to fluencies of 5e14 and 1e15 at/cm2. After i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f164df6f85c62c0bd6d24f66c9d5b49e
https://www.hzdr.de/publications/Publ-25279-1
https://www.hzdr.de/publications/Publ-25279-1
Autor:
Janusz W. Sobczak, M. Stachowicz, Rafal Jakiela, E. Przezdziecka, Aleksander Jablonski, Krzysztof Kopalko, Wojciech Lisowski, Elzbieta Guziewicz, Adam Barcz, D. Snigurenko, M. Krawczyk
Publikováno v:
Journal of Alloys and Compounds. 582:594-597
Arsenic-doped ZnO films were formed by thermal annealing of epitaxial ZnO films grown by Atomic Layer Deposition (ALD) in arsenic atmosphere at temperature 850–950 °C. X-ray photoelectron spectroscopy (XPS) studies of the ZnO:As films revealed the
Autor:
Tomasz A. Krajewski, D. Snigurenko, Rafal Jakiela, Elzbieta Guziewicz, Y. Syryanyy, Wojciech Paszkowicz, Krzysztof Kopalko
Publikováno v:
Materials Research Express. 3:125907
We demonstrate experimental results on p-type ZnO films grown by atomic layer deposition (ALD) and co-doped with aluminum and nitrogen (ANZO). The films were obtained at low temperature (100 °C) with different N to Al ratio and show conductivity typ
Autor:
Elzbieta Guziewicz, Adrian Kozanecki, S. Chusnutdinow, D. Snigurenko, E. Przezdziecka, Krzysztof Kopalko, Anna Reszka, M. Stachowicz
Publikováno v:
Journal of Physics D: Applied Physics. 48:325105
The new type of a p-i-n structure consists of a single acceptor doped ZnO:N film grown by plasma assisted molecular beam epitaxy, a thin isolating Al2O3 layer grown by atomic layer deposition method and n-type GaN template. The maximum forward-to-rev