Zobrazeno 1 - 10
of 32
pro vyhledávání: '"D. Sinitsky"'
Autor:
Sh.Sh. Ismailov, L.T. Chingisova, A.B. Koptleuova, M.M. Adenov, G.A. Musabekova, D.D. Chunkaeva, G.M. Shalgumbaeva, W. Burinsky, D. Sinitsky, U. Antonenka, B.T. Toksanbayeva, A.B. Bakhtybay
Publikováno v:
Фтизиопульмонология. :11-16
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bacdecb3c28297c47ceede2b106d75f
https://doi.org/10.56834/26631504_2022_1_11
https://doi.org/10.56834/26631504_2022_1_11
Publikováno v:
The Annals of The Royal College of Surgeons of England. 100:e136-e138
Gastrointestinal stromal tumours are a rare form of intra-abdominal neoplasm derived from mesenchymal tissue, typically presenting with abdominal pain, anaemia or bleeding into the bowel or abdominal cavity. Hypercalcaemia is an unusual complication,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f14f153490c8511a7a696c459b694ee
https://doi.org/10.1308/rcsann.2018.0064
https://doi.org/10.1308/rcsann.2018.0064
Publikováno v:
Solid-State Electronics. 41:1119-1125
Velocity overshoot of inversion layer electrons and holes is studied experimentally and analytically in special test structures with nominally uniform electric field. The data were used to calibrate energy relaxation parameters in a commercial simula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4e24d1f45ca75dc2718f0b1d6fcb16f
https://doi.org/10.1016/s0038-1101(97)00031-2
https://doi.org/10.1016/s0038-1101(97)00031-2
Publikováno v:
IEEE Transactions on Electron Devices. 44:664-671
In this paper, we experimentally address the effect of a wide range of parameters on the high-field transport of inversion-layer electrons and holes. The studied parameters include substrate doping level, surface micro-roughness, vertical field stren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbac9a06dbbc1d51bc4963a2825c993f
https://doi.org/10.1109/16.563373
https://doi.org/10.1109/16.563373
Publikováno v:
IEEE Transactions on Electron Devices. 44:414-422
In this paper, we propose a novel operation of a MOSFET that is suitable for ultra-low voltage (0.6 V and below) VLSI circuits. Experimental demonstration was carried out in a Silicon-On-Insulator (SOI) technology. In this device, the threshold volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2868a27ab97ad456eed432e6da123d0
https://doi.org/10.1109/16.556151
https://doi.org/10.1109/16.556151
Publikováno v:
IEEE Electron Device Letters. 19:323-325
A versatile SOI model derived from the BSIM3v3 bulk MOSFET model is capable of simulating partially and fully depleted devices with options for self-heating and floating body effects. The model can automatically switch between fully and partially dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9a821128f304f214fa8ae9b52a837ef
https://doi.org/10.1109/55.709628
https://doi.org/10.1109/55.709628
Publikováno v:
IEEE Electron Device Letters. 18:36-38
We report a frequency-dependent output conductance of partially depleted SOI MOSFETs. For high-frequency analog applications, the output conductance is less than half and the dynamic range of V/sub d/ is two times higher than the dc I-V characteristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27d02f1eaa816b086dea024efafe1104
https://doi.org/10.1109/55.553036
https://doi.org/10.1109/55.553036
Publikováno v:
IEEE Electron Device Letters. 18:54-56
We report measurements of the drift velocity of holes in silicon inversion layers. The saturation velocity of holes at 300 K is found to be strongly dependent on the effective vertical field. No hole velocity overshoot was observed down to 0.16 /spl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95fc1805581a791afe01da7ad87d5569
https://doi.org/10.1109/55.553042
https://doi.org/10.1109/55.553042
Publikováno v:
Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9fbe7649738d48ff48eff0045262394
https://doi.org/10.1109/vtsa.1997.614929
https://doi.org/10.1109/vtsa.1997.614929
Publikováno v:
2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).
In this paper, SER reliability is analyzed for 1TRAM circuits for a wide range of parameters. The results show that as technology scales, SER of 1TRAM does not degrade as dramatically as the one of SRAM. Although for older technologies SER of 1TRAM i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eb6b7a5a7b0e6ed722781fe673fd0d2
https://doi.org/10.1109/relphy.2002.996640
https://doi.org/10.1109/relphy.2002.996640