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pro vyhledávání: '"D. Sieloff"'
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Autor:
D. D. Sieloff, T. Y. Luo, K. Kim, T. Guenther, J. Benavides, Z.X. Jiang, B. Robichaud, Dina H. Triyoso, A. Varghese
Publikováno v:
Surface and Interface Analysis. 40:1397-1401
Good accuracy in depth profile analyses of nitrogen in ultrathin oxynitride films is desirable for process development and routine process monitoring. Low energy SIMS is one of the techniques that has found success in the accurate characterization of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::684a5124cbdfc01e70cd73b29ed07ddd
https://doi.org/10.1002/sia.2914
https://doi.org/10.1002/sia.2914
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:1120-1127
The ever increasing interest in surface analysis techniques with excellent depth resolution, great detection sensitivity, and good throughput has been a driving force for development of dynamic secondary ion mass spectrometry using low energy primary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1882fb1099d3005c5ccf9a5de65f4c51
https://doi.org/10.1116/1.2952449
https://doi.org/10.1116/1.2952449
Autor:
Hsing-Huang Tseng, Dina H. Triyoso, Z.X. Jiang, Rama I. Hegde, Philip J. Tobin, K. Kim, T. Y. Luo, J. Y. Yang, D. Sieloff, J. Lerma
Publikováno v:
Applied Surface Science. 252:7172-7175
This work investigated optimal conditions for SIMS analyses of HfO 2 /Si and TiN/HfO 2 interfaces as well as nitrogen distributions in HfO 2 films. It was demonstrated that SIMS profiling from the back side of wafers was desirable to eliminate artifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f2d39e8ceff1c1db77343f4d3ea11a6
https://doi.org/10.1016/j.apsusc.2006.02.092
https://doi.org/10.1016/j.apsusc.2006.02.092
Autor:
J. Lerma, T. Y. Luo, Z.X. Jiang, Philip J. Tobin, Dina H. Triyoso, J. Y. Yang, N. Ramani, K. Kim, Hsing-Huang Tseng, D. Sieloff
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:589-592
Accurate characterization of the nitrogen distribution in a thin HfO2 film is important for process development on the nitridation of HfO2. Low energy secondary ion mass spectrometry (LESIMS) is potentially the technique of choice, thanks to the comb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a5d0ef7176cf3f69122445e220db11b
https://doi.org/10.1116/1.1914811
https://doi.org/10.1116/1.1914811
Publikováno v:
Surface and Interface Analysis. 33:491-495
Development of high-K gate dielectric materials has placed a stringent demand for inspection tools with ultrahigh depth resolving power and detection sensitivity. Low-energy SIMS is potentially the technique of choice provided that the analytical rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df4e5ba02f6d1f7e58a578fd0e7c2842
https://doi.org/10.1002/sia.1237
https://doi.org/10.1002/sia.1237
Publikováno v:
Applied Surface Science. 252:7262-7264
This work explored quantitative analyses of SiGe films on either Si bulk or SOI wafers with low energy SIMS by assuming a constant ratio between the secondary ion yields of Si + and Ge + inside SiGe films. SiGe samples with Ge contents ranging from 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0803164f14a3fd975af1467f1e1cce0f
https://doi.org/10.1016/j.apsusc.2006.02.175
https://doi.org/10.1016/j.apsusc.2006.02.175
Autor:
R. Bleier, Al F. Tasch, Dennis Kamenitsa, B. Obradovic, Yi Chen, Geng Wang, S. Baumann, D. Sieloff, W. McCoy, M. F. Morris, Di Li, D. Dyer, Ganesh Balamurugan, P. Zeitzoff
Publikováno v:
Journal of Technology Computer Aided Design TCAD. :1-20
Monte Carlo ion-implant models for germanium and indium implantation into single-crystal silicon have been developed and are described in this paper. The models have been incorporated in the UT-MARLOWE ion implantation simulator, and have been develo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a81f56e30fa48313cb53d62d9d47314b
https://doi.org/10.1109/tcad.1996.6449175
https://doi.org/10.1109/tcad.1996.6449175
Autor:
H. G. Robinson, J. A. Slinkman, J. K. Listebarger, Mark E. Law, Kevin S. Jones, T. O. Sedgwick, D. D. Sieloff
Publikováno v:
Journal of Applied Physics. 78:2298-2302
A boron doped epilayer was used to investigate the interaction between end of range dislocation loops (formed from Ge+ implantation) and excess point defects generated from a low dose 1014/cm2 B+ implant into silicon. The boron doping spike was grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::636ed9d763f0cee7484927b24b7439e1
https://doi.org/10.1063/1.360147
https://doi.org/10.1063/1.360147
Autor:
J. Liu, B. Herner, Kevin S. Jones, H. Park, J. K. Listebarger, Mark E. Law, D. D. Sieloff, Jia’er Chen, J. A. Slinkman, H. G. Robinson
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:196-201
Studies of the interactions between point defects introduced during semiconductor processing and dislocation loops are reviewed. The processing steps studied include oxidation, ion implantation and silicidation. By using doped marker layers it is sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de07f4ab2242fcff14a74c86c68c22ff
https://doi.org/10.1016/0168-583x(94)00482-x
https://doi.org/10.1016/0168-583x(94)00482-x