Zobrazeno 1 - 10
of 140
pro vyhledávání: '"D. Seitzer"'
Autor:
D. Seitzer, S. Feng
Publikováno v:
IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications. 42:362-365
This brief presents characterization and design considerations of high-speed and high-precision GaAs latched comparators consisting of source coupled FET logic (SCFL) flip flops. In order to characterize the comparators, linearized equivalent circuit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7672a60c313f687e47cec93e0cbb0223
https://doi.org/10.1109/81.390270
https://doi.org/10.1109/81.390270
Autor:
Shen Feng, D. Seitzer
Publikováno v:
IEEE Journal of Solid-State Circuits. 29:844-850
This paper presents design consideration and experimental comparison of GaAs HEMT analog switches for high-speed and high-precision sampled-data applications. At first, basic pass-transistor switches fabricated in a 0.5-/spl mu/m GaAs HEMT technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5107062317eaeebc28576546cd222c4
https://doi.org/10.1109/4.303725
https://doi.org/10.1109/4.303725
Publikováno v:
Microelectronic Engineering. 24:155-162
A reliable approach for layout-based fine-positioning of an electron beam is presented. Precise fine positioning can be achieved using mispositioning factors derived from layout data in a given window. Consecutive layout window adjustment leads to an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5396c0b9c156ecfba982825a2bd125c3
https://doi.org/10.1016/0167-9317(94)90066-3
https://doi.org/10.1016/0167-9317(94)90066-3
Publikováno v:
Analog Integrated Circuits and Signal Processing. 4:7-20
To improve the performance of sensors it is necessary to shrink their physical dimensions. Small sensors can be realized by means of thin-film processes and microlithography. But small sensor dimension implies small output signals. If silicon is used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16d20edf0c8f2ee45a687d6189d92d80
https://doi.org/10.1007/bf01240675
https://doi.org/10.1007/bf01240675
Publikováno v:
IEEE Journal of Solid-State Circuits. 27:1313-1320
To enhance the dynamic accuracy of high-speed A/D conversion, a 5-b flash converter with on-chip track and hold circuitry (T&H) was developed. The design is based on TriQuint's commercial 1 mu m GaAs E/D MESFET process. Dynamic characterization was p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f2f5347fb8d90ca8e13bf8eea3905b9
https://doi.org/10.1109/4.156431
https://doi.org/10.1109/4.156431
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 41:829-833
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::126887ab85ac90903ca61477a89e9e3e
https://doi.org/10.1109/19.199417
https://doi.org/10.1109/19.199417
Publikováno v:
Solid-State Electronics. 34:429-436
The method of 2D device modeling with the finite-difference method is extended to three dimensions. The theory and the development of the simulation program for that purpose are described. After calculating the potential distribution in the entire vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80ec8c99ca2fc7a3e7827319c17ed2ff
https://doi.org/10.1016/0038-1101(91)90146-p
https://doi.org/10.1016/0038-1101(91)90146-p
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.