Zobrazeno 1 - 10
of 119
pro vyhledávání: '"D. Seghier"'
Autor:
D. Seghier, H. P. Gislason
Publikováno v:
Journal of Materials Science: Materials in Electronics. 22:1400-1403
We investigated n-conducting Co-doped ZnO epilayers grown by MBE with a cobalt content of nominal 4, 12, and 18 at.% by means of deep level transient spectroscopy (DLTS) and resistivity measurements. We found that in materials grown at the same subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3088878fb181e8758ae0d82f9322942
https://doi.org/10.1007/s10854-011-0320-2
https://doi.org/10.1007/s10854-011-0320-2
Autor:
H.P. Gislason, D. Seghier
Publikováno v:
Physica B: Condensed Matter. :335-338
We report electrical characterization of AlxGa1−xN materials grown by MOCVD. The techniques used in this study were admittance spectroscopy and photocurrent measurements. We identify a continuum of shallow donors with ionization energies ranging fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::221679174a90312b92c1a73ffd9beafc
https://doi.org/10.1016/j.physb.2007.08.181
https://doi.org/10.1016/j.physb.2007.08.181
Autor:
D. Seghier, H.P. Gislason
Publikováno v:
Physica B: Condensed Matter. :404-407
We performed electrical and optical measurements on as-grown ZnO which exhibits n-type conductivity. So far, neither the origin of the residual conductivity nor the electrical properties of the responsible defects is fully understood. We investigated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::050f529c7bb316aab4965df67b20c866
https://doi.org/10.1016/j.physb.2007.08.198
https://doi.org/10.1016/j.physb.2007.08.198
Autor:
H. P. Gislason, D. Seghier
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:687-691
Shallow and deep energy levels in n-type ZnO materials grown by a pulsed laser injection method are investigated. We report thermal ionization energies for residual shallow donors of about Ed = 15 meV. Annealing in nitrogen ambient further lowers the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d3b4c4fcf767261a90e5ad75ad14667
https://doi.org/10.1007/s10854-007-9380-8
https://doi.org/10.1007/s10854-007-9380-8
Autor:
H. P. Gislason, Kimmo Saarinen, Laszlo Liszkay, X. Xu, S. Hautakangas, Jaime A. Freitas, R. L. Henry, V. Ranki, David C. Look, Ilja Makkonen, Martti J. Puska, D. Seghier
Publikováno v:
Physica B: Condensed Matter. :424-427
We have performed a systematic study of magnesium and oxygen doping as well as the effect of annealing in metal organic chemical vapor deposition (MOCVD) and hydride vapor phase epitaxy (HVPE) grown Gallium nitride (GaN) by positron annihilation spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa36ba91a1d196fbaff7eb8ebefdc956
https://doi.org/10.1016/j.physb.2005.12.109
https://doi.org/10.1016/j.physb.2005.12.109
Autor:
H. P. Gislason, D. Seghier
Publikováno v:
Materials Science in Semiconductor Processing. 9:41-44
We present experimental results on the noise of Au/Al 0.3 Ga 0.7 N/GaN-based structures. The layers are as-grown n-type and were fabricated using metalorganic chemical vapor deposition. We find that the low-frequency part of the spectrum is dominated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df0aa2560a4da1e457af32c5eafda298
https://doi.org/10.1016/j.mssp.2006.01.065
https://doi.org/10.1016/j.mssp.2006.01.065
Autor:
H. P. Gislason, D. Seghier
Publikováno v:
Journal of Physics D: Applied Physics. 38:843-846
We investigate p-type GaN : Mg materials using noise spectroscopy. The epitaxial Mg-doped GaN layers were grown on a sapphire substrate by metalorganic chemical vapour deposition. Significant generation–recombination noise is observed and shown to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b48f3a4a01bafe266e1ce37d3765bcc2
https://doi.org/10.1088/0022-3727/38/6/009
https://doi.org/10.1088/0022-3727/38/6/009
Autor:
D. Seghier, H.P. Gislason
Publikováno v:
Physica B: Condensed Matter. :381-384
We present results from noise spectroscopy performed on p-type GaN:Mg samples. In addition to the 1/f noise, significant generation–recombination noise is observed and shown to be linked to metastable DX-like centers. We correlate these centers wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc284205c79b6551a6451431c55b27cd
https://doi.org/10.1016/j.physb.2003.09.062
https://doi.org/10.1016/j.physb.2003.09.062
Autor:
H P Gislason, D Seghier
Publikováno v:
Journal of Physics D: Applied Physics. 35:291-294
Electrical properties of Mg-doped GaN epilayers grown by metal organic chemical vapour deposition (MOCVD) were investigated using photocapacitance measurements and deep level transient spectroscopy (DLTS). Annealing at different temperatures and diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::050f6899ab19f89dc52da4fe4f1983fb
https://doi.org/10.1088/0022-3727/35/4/302
https://doi.org/10.1088/0022-3727/35/4/302
Autor:
Gérard Neu, Christian Morhain, J. P. Faurie, M. Teisseire, H. P. Gislason, Eric Tournié, D. Seghier
Publikováno v:
physica status solidi (b). 229:251-255
ZnSe epilayers doped with plasma-activated phosphorus have been investigated by means of optical and electrical measurements. It is found that P Se forms a shallow acceptor with binding energy of 85 meV which is identified in the optical emission spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f566ad9ccb792620eacdec0a95ccd5af
https://doi.org/10.1002/1521-3951(200201)229:1<251::aid-pssb251>3.0.co
https://doi.org/10.1002/1521-3951(200201)229:1<251::aid-pssb251>3.0.co