Zobrazeno 1 - 10
of 444
pro vyhledávání: '"D. Schmitt-Landsiedel"'
Publikováno v:
AIP Advances, Vol 7, Iss 5, Pp 056005-056005-7 (2017)
Among emerging technologies, perpendicular Nanomagnetic Logic (pNML) seems to be very promising because of its capability of combining logic and memory onto the same device, scalability, 3D-integration and low power consumption. Recently, Full Adder
Externí odkaz:
https://doaj.org/article/396cca0f18624f01ac5709778b641aea
Publikováno v:
Advances in Radio Science, Vol 12, Pp 103-109 (2014)
This contribution provides an approach for emulating the behaviour of an ASIC temperature monitoring system (TMon) during run-time for a tightly-coupled processor array (TCPA) of a heterogeneous invasive multi-tile architecture to be used for FPGA pr
Externí odkaz:
https://doaj.org/article/07b11d8ca7c94e9fa20522f37f66feb1
Autor:
E. Glocker, D. Schmitt-Landsiedel
Publikováno v:
Advances in Radio Science, Vol 11, Pp 219-225 (2013)
In modern CMOS integrated Systems-on-Chip global temperature variations arise as well as local fluctuations in regions of high activity, resulting in the arise of local hot spots. This in turn can greatly affect reliability and life-time of a chip. E
Externí odkaz:
https://doaj.org/article/b63bce894dc44d8e9abbbc74c496835f
Publikováno v:
Advances in Radio Science, Vol 10, Pp 215-220 (2012)
In Adaptive Voltage Scaling (AVS) the supply voltage of digital circuits is tuned according to the circuit's actual operating condition, which enables dynamic compensation to PVTA variations. By exploiting the excessive safety margins added in state-
Externí odkaz:
https://doaj.org/article/327343bbd48342c98a9082ad5dc88cba
Publikováno v:
Advances in Radio Science, Vol 9, Pp 255-261 (2011)
In current process technologies, NBTI (negative bias temperature instability) has the most severe aging effect on static random access memory (SRAM) cells. This degradation effect causes loss of stability. In this paper countermeasures against this h
Externí odkaz:
https://doaj.org/article/2700a39637b442c5a372002a1faba7c0
Publikováno v:
Advances in Radio Science, Vol 9, Pp 263-267 (2011)
Low-dropout (LDO) voltage regulators are widely used to supply low-voltage digital circuits. For recent ultra-low-power microcontroller systems, a fully-integrated LDO without any external capacitance is preferred in order to achieve a fast and energ
Externí odkaz:
https://doaj.org/article/2d6f1b954afc415999a2b288fae7130f
Publikováno v:
Advances in Radio Science, Vol 9, Pp 281-287 (2011)
Sensing cellular adhesion via impedance measurements provides a versatile and easily accessible means for monitoring in-vitro cell cultures. Previous works used external electronics connected via cables to microelectrodes to achieve this goal, thus i
Externí odkaz:
https://doaj.org/article/ff31f60af9484e1b912948218564e7d2
Publikováno v:
Advances in Radio Science, Vol 9, Pp 215-218 (2011)
For the first time carbon nanotube (CNT) transistor based adiabatic logic (AL) was analyzed in this work and compared to CNT based static CMOS (CCNT). Static CCNT inverters are used as a reference and compared to inverters in the AL families Efficien
Externí odkaz:
https://doaj.org/article/effa6411a30143c2bfa64f38f6958b2b
Publikováno v:
Advances in Radio Science, Vol 9, Pp 225-230 (2011)
This paper discusses reliability analysis of a buffer circuit targeted for an analog to digital converter application. The circuit designed in a 32 nm high-κ metal gate CMOS technology was investigated by circuit simulation and sensitivity analysis.
Externí odkaz:
https://doaj.org/article/1e017a2ee9b845c0855a0c3351b01c35
Autor:
M. Weis, D. Schmitt-Landsiedel
Publikováno v:
Advances in Radio Science, Vol 8, Pp 275-278 (2010)
The recently introduced Vertical Slit Field Effect Transistor allows for adjusting its threshold voltage through independent controllable gates. This feature can be applied to a broad range of circuits. In this paper two examples are presented. First
Externí odkaz:
https://doaj.org/article/c8d827abf1514d59bae53c52ffac6d72