Zobrazeno 1 - 10
of 4 345
pro vyhledávání: '"D. Schmitt"'
Autor:
T. Jordan, P. Fulton, J. Tester, D. Bruhn, H. Asanuma, U. Harms, C. Wang, D. Schmitt, P. J. Vardon, H. Hofmann, T. Pasquini, J. Smith
Publikováno v:
Scientific Drilling, Vol 28, Pp 75-91 (2020)
In January 2020, a scientific borehole planning workshop sponsored by the International Continental Scientific Drilling Program was convened at Cornell University in the northeastern United States. Cornell is planning to drill test wells to evaluate
Externí odkaz:
https://doaj.org/article/a7a36075d7724a43b2fa2f5e348871a3
Publikováno v:
ACS Omega, Vol 9, Iss 35, Pp 37278-37287 (2024)
Externí odkaz:
https://doaj.org/article/2dfda0269dfe4eaa991a99408a3f094e
Autor:
Richard T. Kraus, H. Andrew Cook, Alexis Sakas, Thomas M. MacDougall, Matthew D. Faust, Joseph D. Schmitt, Christopher S. Vandergoot
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-13 (2024)
Abstract Interjurisdictional migrations lead to seasonally changing patterns of exploitation risk, emphasizing the importance of spatially explicit approaches to fishery management. Understanding how risk changes along a migration route supports time
Externí odkaz:
https://doaj.org/article/d50f7fef9a7c4b619a1ed92f79ae1f04
Publikováno v:
Advances in Radio Science, Vol 12, Pp 103-109 (2014)
This contribution provides an approach for emulating the behaviour of an ASIC temperature monitoring system (TMon) during run-time for a tightly-coupled processor array (TCPA) of a heterogeneous invasive multi-tile architecture to be used for FPGA pr
Externí odkaz:
https://doaj.org/article/07b11d8ca7c94e9fa20522f37f66feb1
Publikováno v:
AIP Advances, Vol 7, Iss 5, Pp 056005-056005-7 (2017)
Among emerging technologies, perpendicular Nanomagnetic Logic (pNML) seems to be very promising because of its capability of combining logic and memory onto the same device, scalability, 3D-integration and low power consumption. Recently, Full Adder
Externí odkaz:
https://doaj.org/article/396cca0f18624f01ac5709778b641aea
Autor:
MS. CHENAUD, N. DEVICTOR, G. MIGNOT, F. VARAINE, C. VÉNARD, L. MARTIN, M. PHELIP, D. LORENZO, F. SERRE, F. BERTRAND, N. ALPY, M. LE FLEM, P. GAVOILLE, R. LAVASTRE, P. RICHARD, D. VERRIER, D. SCHMITT
Publikováno v:
Nuclear Engineering and Technology, Vol 45, Iss 6, Pp 721-730 (2013)
Within the framework of the ASTRID project, core design studies are being conducted by the CEA with support from AREVA and EDF. The pre-conceptual design studies are being conducted in accordance with the GEN IV reactor objectives, particularly in te
Externí odkaz:
https://doaj.org/article/ef48aaa3287641f0a6cc409be27577dc
Autor:
E. Glocker, D. Schmitt-Landsiedel
Publikováno v:
Advances in Radio Science, Vol 11, Pp 219-225 (2013)
In modern CMOS integrated Systems-on-Chip global temperature variations arise as well as local fluctuations in regions of high activity, resulting in the arise of local hot spots. This in turn can greatly affect reliability and life-time of a chip. E
Externí odkaz:
https://doaj.org/article/b63bce894dc44d8e9abbbc74c496835f
Autor:
Fatma Sahan, Lisa Guthardt, Karin Panitz, Anna Siegel-Kianer, Isabel Eichhof, Björn D Schmitt, Jennifer Apolinario-Hagen
Publikováno v:
JMIR Medical Education, Vol 10, p e59454 (2024)
BackgroundCurrently, there is a need to optimize knowledge on digital transformation in mental health care, including digital therapeutics (eg, prescription apps), in medical education. However, in Germany, digital health has not yet been systematica
Externí odkaz:
https://doaj.org/article/3fb05596328848c5b15ee5520b52faf1
Publikováno v:
Advances in Radio Science, Vol 10, Pp 215-220 (2012)
In Adaptive Voltage Scaling (AVS) the supply voltage of digital circuits is tuned according to the circuit's actual operating condition, which enables dynamic compensation to PVTA variations. By exploiting the excessive safety margins added in state-
Externí odkaz:
https://doaj.org/article/327343bbd48342c98a9082ad5dc88cba
Publikováno v:
Advances in Radio Science, Vol 9, Pp 255-261 (2011)
In current process technologies, NBTI (negative bias temperature instability) has the most severe aging effect on static random access memory (SRAM) cells. This degradation effect causes loss of stability. In this paper countermeasures against this h
Externí odkaz:
https://doaj.org/article/2700a39637b442c5a372002a1faba7c0